ZTX849 [ZETEX]
NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR; NPN硅平面中功率大电流晶体管
| 型号： | ZTX849 |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | NPN SILICON PLANAR MEDIUM POWER HIGH CURRENT TRANSISTOR |
| 文件： | 总3页 (文件大小：64K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
NPN SILICON PLANAR MEDIUM POWER
HIGH CURRENT TRANSISTOR
ISSUE 2 MARCH 94
ZTX849
FEATURES
*
*
*
5 Amps continuous current
Up to 20 Amps peak current
Very low saturation voltages
APPLICATIONS
*
*
*
*
LCD backlight converter
Flash gun converters
Battery powered circuits
Motor drivers
C
B
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
V
Collector-Base Voltage
80
Collector-Emitter Voltage
Emitter-Base Voltage
30
V
6
V
Peak Pulse Current
20
5
A
Continuous Collector Current
Practical Power Dissipation*
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
IC
A
Ptotp
Ptot
1.58
W
W
°C
1.2
Tj:Tstg
-55 to +200
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated)
PARAMETER
SYMBOL MIN. TYP.
MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO
V(BR)CER
V(BR)CEO
V(BR)EBO
ICBO
80
80
30
6
120
120
40
V
V
V
V
IC=100µA
Collector-Emitter Breakdown
Voltag
IC=1µA, RB ≤1KΩ
IC=10mA*
IE=100µA
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown
Voltage
8
Collector Cut-Off Current
Collector Cut-Off Current
Emitter Cut-Off Current
50
1
nA
µA
VCB=70V
VCB=70V, Tamb=100°C
ICER
R ≤1KΩ
50
1
nA
µA
VCB=70V
VCB=70V, Tamb=100°C
IEBO
10
nA
VEB=6V
Collector-Emitter Saturation
Voltage
VCE(sat)
25
50
110
180
50
mV
mV
mV
mV
IC=0.5A, IB=20mA*
IC=1A, IB=20mA*
IC=2A, IB=20mA*
IC=5A, IB=200mA*
100
200
220
Base-Emitter
Saturation Voltage
VBE(sat)
930
1050 mV
IC=5A, IB=200mA*
3-291
ZTX849
ELECTRICAL CHARACTERISTICS (at T
= 25°C)
amb
PARAMETER
SYMBOL MIN. TYP.
MAX. UNIT CONDITIONS.
Base-Emitter
Turn-On Voltage
VBE(on)
850
950
mV
IC=5A, VCE=1V*
Static Forward
Current Transfer
Ratio
hFE
100
100
100
30
200
200
170
65
IC=10mA, VCE=1V
IC=1A, VCE=1V*
IC=5A, VCE=1V*
IC=20A, VCE=1V*
300
Transition Frequency
fT
100
MHz
pF
IC=100mA, VCE=10V
f=50MHz
Output Capacitance
Switching Times
Cobo
75
VCB=10V, f=1MHz*
ton
toff
45
630
ns
ns
IC=1A, IB!=100mA
IB2=100mA, VCC=10V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
MAX.
UNIT
Thermal Resistance: Junction to Ambient
Junction to Case
Rth(j-amb)
Rth(j-case)
150
50
°C/W
°C/W
4.0
3.0
2.0
1.0
D.C.
150
t
1
D=t
1/tP
100
50
0
tP
D=0.6
D=0.2
D=0.1
D=0.05
Single Pulse
-40 -20
0
20
0.0001 0.001
0.01
0.1
1
10
100
40 60 80 100 120 140 160 180 200
T -Temperature (°C)
Pulse Width (seconds)
Derating curve
Maximum transient thermal impedance
3-292
ZTX849
TYPICAL CHARACTERISTICS
1.6
1.4
1.2
1.0
0.8
0.6
0.4
300
200
0.8
IC/IB=10
IC/IB=50
VCE=5V
VCE=1V
0.6
100
0.4
0.2
0.2
0
0
100
0.01
0.1
10
1
0.01
0.1
1
10
100
IC - Collector Current (Amps)
IC - Collector Current (Amps)
FE
CE(sat)
V
C
v I
C
v I
h
VCE=1V
2.0
2.0
1.5
1.0
0.5
1.5
1.0
0.5
IC/IB=10
IC/IB=50
1
0.001
1
100
0.001
0.01
0.1
10
100
0.01
0.1
10
IC - Collector Current (Amps)
BE(sat)
IC - Collector Current (Amps)
C
v I
V
VBE(on) v IC
Single Pulse Test at Tamb=25°C
100
10
D.C.
1s
100ms
10ms
1.0ms
0.1ms
1
0.1
0.1
1
10
100
VCE - Collector Voltage (Volts)
Safe Operating Area
3-293
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