ZTX796ASMTA [ZETEX]
Small Signal Bipolar Transistor, 0.5A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3;
| 型号： | ZTX796ASMTA |
| 厂家： | 
ZETEX SEMICONDUCTORS |
| 描述： | Small Signal Bipolar Transistor, 0.5A I(C), 200V V(BR)CEO, 1-Element, PNP, Silicon, TO-92 COMPATIBLE, E-LINE PACKAGE-3 晶体 小信号双极晶体管 局域网 |
| 文件： | 总3页 (文件大小：63K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
PNP SILICON PLANAR MEDIUM POWER
HIGH GAIN TRANSISTOR
ISSUE 1 APRIL 94
ZTX796A
FEATURES
*
*
*
200 Volt VCEO
Gain of 250 at IC=0.3 Amps
Very low saturation voltage
C
B
E
E-Line
TO92 Compatible
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
UNIT
V
Collector-Base Voltage
-200
-200
-5
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
Peak Pulse Current
-1
A
Continuous Collector Current
Practical Power Dissipation*
IC
-0.5
1.5
A
Ptotp
Ptot
W
Power Dissipation at Tamb=25°C
derate above 25°C
1
5.7
W
mW/°C
Operating and Storage Temperature Range
Tj:Tstg
-55 to +200
°C
*The power which can be dissipated assuming the device is mounted in a typical manner on a
P.C.B. with copper equal to 1 inch square minimum
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
PARAMETER
SYMBOL MIN. TYP.
MAX. UNIT CONDITIONS.
Collector-Base Breakdown
Voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
-200
-200
-5
V
V
V
IC=-100µA
IC=-10mA*
IE=-100µA
Collector-Emitter Breakdown
Voltage
Emitter-Base Breakdown
Voltage
Collector Cut-Off Current
Emitter Cut-Off Current
ICBO
-0.1
-0.1
VCB=-150V
µA
µA
IEBO
VEB=-4V
Collector-Emitter Saturation
Voltage
VCE(sat)
-0.2
-0.3
-0.3
V
V
V
IC=-50mA, IB=-2mA*
IC=-100mA, IB=-5mA*
IC=-200mA, IB=-20mA*
Base-Emitter
Saturation Voltage
VBE(sat)
VBE(on)
hFE
-0.95
V
IC=-200mA, IB=-20mA*
Base-Emitter
Turn-On Voltage
-0.67
V
IC=-200mA, VCE=-10V*
Static Forward Current
Transfer Ratio
300
300
250
100
800
IC=-10mA, VCE=-10V*
IC=-100mA, VCE=-10V*
IC=-300mA, VCE=-10V*
IC=-400mA, VCE=-10V*
3-288
ZTX796A
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C)
PARAMETER
SYMBOL MIN. TYP.
MAX. UNIT CONDITIONS.
Transition Frequency
fT
100
MHz
IC=-50mA, VCE=-5V
f=50MHz
Input Capacitance
Output Capacitance
Switching Times
Cibo
225
12
pF
pF
VEB=-0.5V, f=1MHz
VCB=-10V, f=1MHz
Cobo
ton
toff
100
3200
ns
ns
IC=-100mA, IB1=-10mA
IB2=-10mA, VCC=-50V
*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2%
THERMAL CHARACTERISTICS
PARAMETER
SYMBOL
MAX.
UNIT
Thermal Resistance: Junction to Ambient1
Junction to Ambient2
Junction to Case
Rth(j-amb)1
Rth(j-amb)2
Rth(j-case)
175
116
70
°C/W
°C/W
°C/W
Device mounted on P.C.B. with copper equal to 1 sq. Inch minimum.
2.5
2.0
200
D=1 (D.C.)
t
1
D=t1/tP
Case temperature
t
P
1.5
100
D=0.5
1.0
0.5
0
D=0.2
D=0.1
Single Pulse
0
0.0001 0.001
-40 -20
0
20
0.01
0.1
1
10
100
40 60 80 100 120 140 160 180 200
T -Temperature (°C)
Pulse Width (seconds)
Derating curve
Maximum transient thermal impedance
3-289
ZTX796A
1.8
1.8
1.6
-55°C
+25°C
+100°C
+175°C
IC/IB=40
IC/IB=20
IC/IB=10
Tamb=25°C
IC/IB=20
1.6
1.4
1.2
1.4
1.2
1.0
0.8
0.6
0.4
1.0
0.8
0.6
0.4
0.2
0
0.001
0.2
0
0.001
0.01
0.1
1
10
0.01
0.1
1
10
IC - Collector Current (Amps)
IC - Collector Current (Amps)
+100°C
+25°C
-55°C
+25°C
VCE=10V
IC/IB=10
1.6
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
-55°C
+100°C
+175°C
750
500
250
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0
0.01
0.1
10
1
0
0.01
0.1
1
10
IC - Collector Current (Amps)
IC - Collector Current (Amps)
Single Pulse Test at Tamb=25°C
1
-55°C
+25°C
+100°C
VCE=10V
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.1
0.01
D.C.
1s
100ms
10ms
1.0ms
0.1ms
0
0.01
0.1
1
10
0.001
1
10
100
1000
IC - Collector Current (Amps)
VCE - Collector Voltage (Volts)
3-290
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