SBG1030L-T [DIODES]
10A SCHOTTKY BARRIER RECTIFIER; 10A肖特基整流器型号: | SBG1030L-T |
厂家: | DIODES INCORPORATED |
描述: | 10A SCHOTTKY BARRIER RECTIFIER |
文件: | 总3页 (文件大小:61K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SBG1025L - SBG1030L
10A SCHOTTKY BARRIER RECTIFIER
Features
ꢀ
Guard Ring Die Construction for
Transient Protection
ꢀ
ꢀ
ꢀ
ꢀ
Low Power Loss, High Efficiency
High Surge Capability
Very Low Forward Voltage Drop
For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Applications
D2PAK
E
Min
9.65
14.60
0.51
2.29
4.37
1.14
1.14
8.25
0.30
2.03
2.29
Max
10.69
15.88
1.14
2.79
4.83
1.40
1.40
9.25
0.64
2.92
2.79
Dim
A
G
H
A
4
B
C
ꢀ
Plastic Material: UL Flammability
Classification Rating 94V-0
J
B
D
1
2
3
E
G
H
Mechanical Data
ꢀ
M
Case: D2PAK Molded Plastic
Terminals: Solderable per MIL-STD-202,
Method 208
Polarity: See Diagram
Marking: Type Number
Weight: 1.7 grams (approx.)
Ordering Information: See Sheet 2
D
K
J
ꢀ
C
L
K
L
ꢀ
ꢀ
ꢀ
ꢀ
PIN 1
PIN 3
M
PIN 2 & 4
All Dimensions in mm
@ TA = 25ꢁC unless otherwise specified
Maximum Ratings
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
SBG1025L
SBG1030L
Characteristic
Symbol
Unit
VRRM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
25
18
30
21
V
VR(RMS)
IO
RMS Reverse Voltage
V
A
Average Rectified Output Current
@ TC = 120ꢁC
10
200
3.0
Non-Repetitive Peak Forward Surge Current
8.3ms Single half sine-wave Superimposed on Rated Load
(JEDEC Method)
IFSM
A
RꢂJC
Tj
Typical Thermal Resistance Junction to Case (Note 1)
Operating Temperature Range
ꢁC/W
ꢁC
-65 to +125
-65 to +150
TSTG
ꢁC
Storage Temperature Range
@ TA = 25ꢁC unless otherwise specified
Electrical Characteristics
Min
Typ
Max
Unit
Characteristic
Symbol
Test Condition
Reverse Breakdown Voltage
SBG1025L
SBG1030L
25
30
ꢃ
ꢃ
ꢃ
ꢃ
V
V
V(BR)R
IR = 1mA
@ IF = 10A, TC
=
25ꢁC
ꢃ
ꢃ
ꢃ
ꢃ
ꢃ
0.34
ꢃ
0.45
0.36
0.55
0.50
@ IF = 10A, TC = 125ꢁC
@ IF = 20A, TC 25ꢁC
@ IF = 20A, TC = 125ꢁC
VFM
Forward Voltage
V
=
0.48
@ TC
= 25ꢁC
Peak Reverse Current
ꢃ
ꢃ
ꢃ
150
1.0
IRM
Cj
mA
pF
@ TC = 125ꢁC
at Rated DC Blocking Voltage
260
f = 1.0MHz, VR = 4.0V DC
Typical Junction Capacitance
ꢃ
350
ꢃ
Notes:
1. Thermal resistance: junction to case mounted on heat sink.
DS30127 Rev. 3 - 2
1 of 3
SBG1025L - SBG1030L
10
8
100
10
1.0
0.1
6
4
2
0
Tj - 25°C
IF Pulse Width = 300µs
0
0.2
0.4
0.6
0.8
1.0
0
25
50
75
100
125
150
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typical Forward Characteristics
TC, CASE TEMPERATURE (°C)
Fig. 1 Forward Derating Curve
1000
100
300
250
200
8.3 ms single half-sine-wave
JEDEC method
Tj = 125ºC
Tj = 100ºC
10
1
150
100
Tj = 25ºC
0.1
0.01
50
0
15
25
30
0
20
35
10
5
1
10
100
NUMBER OF CYCLES AT 60Hz
Fig. 4 Maximum Non-Repetitive Surge Current
VR, REVERSE VOLTAGE (V)
Fig. 3 Typical Reverse Characteristics
1000
500
Tj = 25°C
f = 1.0MHz
10
0.1
1.0
10
100
VR, REVERSE VOLTAGE (V)
Fig. 5 Typical Junction Capacitance
DS30127 Rev. 3 - 2
2 of 3
SBG1025L - SBG1030L
(Note 2)
Ordering Information
Device
Packaging
D2PAK
D2PAK
D2PAK
D2PAK
Shipping
50/Tube
SBG1025L
SBG1025L-T
SBG1030L
SBG1030L-T
800/Tape & Reel
50/Tube
800/Tape & Reell
Notes:
2. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
YWW
SBG10XXL = Product type marking code (SBG1025L or SBG1030L)
= Manufacturers’ code marking
YWW = Date code marking
SBG10XXL
Y = Last digit of year ex: 2 for 2002
WW = Week code 01 to 52
DS30127 Rev. 3 - 2
3 of 3
SBG1025L - SBG1030L
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