SBG1045CT [DIODES]

10A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER; 10A表面贴装肖特基整流器
SBG1045CT
型号: SBG1045CT
厂家: DIODES INCORPORATED    DIODES INCORPORATED
描述:

10A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER
10A表面贴装肖特基整流器

整流二极管
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中文:  中文翻译
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SBG1030CT - SBG1045CT  
10A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER  
Features  
Schottky Barrier Chip  
Guard Ring Die Construction for  
Transient Protection  
Low Power Loss, High Efficiency  
High Surge Capability  
High Current Capability and Low Forward  
Voltage Drop  
E
D2PAK  
Min  
Max  
10.69  
15.88  
1.14  
2.79  
4.83  
1.40  
1.40  
9.25  
0.64  
2.92  
2.79  
Dim  
A
G
H
A
9.65  
14.60  
0.51  
2.29  
4.37  
1.14  
1.14  
8.25  
0.30  
2.03  
2.29  
4
Surge Overload Rating to 125A Peak  
B
For Use in Low Voltage, High Frequency  
Inverters, Free Wheeling, and Polarity  
Protection Applications  
Plastic Material: UL Flammability  
Classification Rating 94V-0  
C
J
B
D
1
2
3
E
G
H
M
Mechanical Data  
D
K
J
Case: D2PAK Molded Plastic  
Terminals: Solderable per MIL-STD-202,  
Method 208  
Polarity: See Diagram  
Marking: Type Number  
Weight: 1.7 grams (approx.)  
Mounting Position: Any  
C
L
K
L
PIN 1  
PIN 3  
PIN 2 & 4  
M
All Dimensions in mm  
@ TA = 25C unless otherwise specified  
Maximum Ratings and Electrical Characteristics  
Single phase, half wave, 60Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
SBG  
1030CT  
SBG  
1040CT  
SBG  
1045CT  
SBG  
1035CT  
Characteristic  
Symbol  
Unit  
VRRM  
VRWM  
VR  
Peak Repetitive Reverse Voltage  
Working Peak Reverse Voltage  
DC Blocking Voltage  
30  
21  
35  
25  
40  
28  
45  
32  
V
VR(RMS)  
IO  
RMS Reverse Voltage  
V
A
Average Rectified Output Current  
Non-Repetitive Peak Forward Surge Current  
8.3ms Single half sine-wave superimposed on rated load  
(JEDEC Method)  
@ TC = 95C  
10  
IFSM  
125  
A
Forward Voltage, per Element  
@ IF = 5.0A  
VFM  
IRM  
0.55  
V
Peak Reverse Current  
at Rated DC Blocking Voltage  
@ Tj = 25C  
@ Tj = 125C  
1.0  
50  
mA  
Cj  
Typical Junction Capacitance (Note 2)  
275  
3.0  
pF  
K/W  
C  
RJC  
Typical Thermal Resistance Junction to Case (Note 1)  
Operating and Storage Temperature Range  
Tj, TSTG  
-65 to +125  
Notes:  
1. Thermal resistance: junction to case mounted on heat sink.  
2. Measured at 1.0MHz and applied reverse voltage of 4.0V DC.  
DS30092 Rev. B-2  
1 of 2  
SBG1030CT - SBG1045CT  
12  
10  
8
100  
Tj = 125°C  
10  
Tj = 25°C  
6
4
1.0  
0.1  
2
Pulse Width = 300µs  
2% Duty Cycle  
0
0
50  
100  
150  
0
0.4  
0.8  
1.2  
TC, CASE TEMPERATURE (°C)  
VF, INSTANTANEOUS FORWARD VOLTAGE (V)  
Fig. 2 Typical Forward Characteristics  
Fig. 1 Forward Current Derating Curve  
150  
125  
100  
75  
1000  
500  
Tj = 25°C  
f = 1.0MHz  
50  
200  
100  
25  
0
0.1  
1.0  
10  
100  
1
10  
100  
VR, REVERSE VOLTAGE (V)  
NUMBER OF CYCLES AT 60Hz  
Fig. 3 Max Non-Repetitive Surge Current  
Fig. 4 Typical Junction Capacitance  
DS30092 Rev. B-2  
2 of 2  
SBG1030CT - SBG1045CT  

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