SBG1045 [SIRECTIFIER]

肖特基势垒二极管Schottky Barrier Diodes,低压降肖特基势垒二极管Low VF Schottky Barrier Diodes,Tj = -40°C ~ 125°C, Tjm = 125°C。; 肖特基势垒二极管肖特基势垒二极管,低压降肖特基势垒二极管低VF肖特基势垒二极管, TJ = -40 ° C〜 125°C , TJM = 125°C 。
SBG1045
型号: SBG1045
厂家: SIRECTIFIER SEMICONDUCTORS    SIRECTIFIER SEMICONDUCTORS
描述:

肖特基势垒二极管Schottky Barrier Diodes,低压降肖特基势垒二极管Low VF Schottky Barrier Diodes,Tj = -40°C ~ 125°C, Tjm = 125°C。
肖特基势垒二极管肖特基势垒二极管,低压降肖特基势垒二极管低VF肖特基势垒二极管, TJ = -40 ° C〜 125°C , TJM = 125°C 。

二极管
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SBG1030 thru SBG1045  
Low VF Schottky Barrier Rectifiers  
Dimensions TO-263(D2PAK)  
Dim.  
Millimeter  
Inches  
Min. Max.  
Min.  
Max.  
C(TAB)  
A
A1  
4.06  
2.03  
4.83  
2.79  
.160  
.080  
.190  
.110  
A
C
b
b2  
0.51  
1.14  
0.99  
1.40  
.020  
.045  
.039  
.055  
A
c
c2  
0.46  
1.14  
0.74  
1.40  
.018  
.045  
.029  
.055  
C
D
D1  
8.64  
8.00  
9.65  
8.89  
.340  
.315  
.380  
.350  
A=Anode, C=Cathode, TAB=Cathode  
E
E1  
e
9.65  
6.22  
2.54 BSC  
10.29  
8.13  
.380  
.245  
.100 BSC  
.405  
.320  
VRRM  
V
VRMS  
V
VDC  
V
L
14.61  
2.29  
1.02  
1.27  
0
15.88  
2.79  
1.40  
1.78  
0.20  
.575  
.090  
.040  
.050  
0
.625  
L1  
L2  
L3  
L4  
.110  
.055  
.070  
.008  
SBG1030  
SBG1035  
SBG1040  
SBG1045  
30  
21  
30  
35  
40  
45  
1. Gate  
2. Collector  
3. Emitter  
4. Collector  
Botton Side  
35  
24.5  
28  
40  
R
0.46  
0.74  
.018  
.029  
45  
31.5  
Symbol  
Characteristics  
Maximum Ratings  
Unit  
I(AV)  
IFSM  
VF  
Maximum Average Forward Rectified Current @TC=95oC  
10  
A
A
Peak Forward Surge Current 8.3ms Single Half-Sine-Wave  
Superimposed On Rated Load (JEDEC METHOD)  
250  
Maximum Forward Voltage At 5A DC (Note 1)  
0.60  
V
Maximum DC Reverse Current  
At Rated DC Blocking Voltage  
@TJ=25oC  
1.0  
50  
IR  
mA  
@TJ=100oC  
CJ  
ROJC  
TJ  
Typical Junction Capacitance (Note 2)  
Typical Thermal Resistance (Note 3)  
Operating Temperature Range  
Storage Temperature Range  
280  
pF  
oC/W  
oC  
3.0  
-55 to +125  
-55 to +150  
TSTG  
oC  
NOTES: 1. 300us Pulse Width, 2% Duty Cycle.  
2. Measured At 1.0MHz And Applied Reverse Voltage Of 4.0V DC.  
3. Thermal Resistance Junction To Case.  
FEATURES  
MECHANICAL DATA  
* Metal of silicon rectifier, majority carrier conducton  
* Guard ring for transient protection  
* Low power loss, high efficiency  
* High current capability, low VF  
* Case: D2PAK molded plastic  
* Polarity: As marked on the body  
* Weight: 0.06 ounces, 1.7 grams  
* High surge capacity  
* For use in low voltage, high frequency inverters, free  
whelling, and polarity protection applications  
SBG1030 thru SBG1045  
Low VF Schottky Barrier Rectifiers  

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