FZT658TA [DIODES]
400V NPN HIGH VOLTAGE TRANSISTOR IN SOT223; 400V NPN高压晶体管采用SOT223
| 型号： | FZT658TA |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 400V NPN HIGH VOLTAGE TRANSISTOR IN SOT223 |
| 文件： | 总7页 (文件大小：267K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
A Product Line of
Diodes Incorporated
Green
FZT658
400V NPN HIGH VOLTAGE TRANSISTOR IN SOT223
Features
Mechanical Data
•
•
•
•
•
Case: SOT223
Case material: molded plastic. “Green” molding compound.
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
•
•
•
•
•
•
•
•
•
BVCEO > 400V
IC = 500mA High Continuous Current
ICM = 1A Peak Pulse Current
Low Saturation Voltage VCE(SAT) < 250mV @ 50mA
hFE > 40 Specified up to 200mA for High Current Gain Hold Up
Complementary PNP Type: FZT758
•
Weight: 0.112 grams (approximate)
Lead-Free Finish; RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
SOT223
Top View
Pin-Out
Top View
Device Symbol
Ordering Information (Notes 4)
Product
FZT658TA
Marking
FZT658
Reel Size (inches)
Tape Width (mm)
Quantity per Reel
7
12
1,000
Notes:
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http”//www.diodes.com/products/packages.html.
Marking Information
FZT
658
FZT658 = Product type Marking Code
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© Diodes Incorporated
FZT658
Document Number DS33153 Rev. 5 - 2
A Product Line of
Diodes Incorporated
FZT658
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Voltage
Symbol
VCBO
VCEO
VEBO
IC
Value
400
400
7
Unit
V
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
Continuous Collector Current
Peak Pulse Current
0.5
1
A
A
ICM
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
Unit
W
(Note 5)
(Note 6)
(Note 5)
(Note 6)
2
3
Power Dissipation
PD
W
62.5
°C/W
°C/W
°C/W
°C
Thermal Resistance, Junction to Ambient
R• JA
41.7
Thermal Resistance, Junction to Leads (Note 7)
Operating and Storage Temperature Range
12.93
-55 to +150
R• JL
TJ, TSTG
ESD Ratings (Note 8)
Characteristic
Electrostatic Discharge - Human Body Model
Electrostatic Discharge - Machine Model
Symbol
ESD HBM
ESD MM
Value
• 4,000
• 400
Unit
V
V
JEDEC Class
3A
C
Notes:
5. For a device surface mounted on 25mm X 25mm FR4 PCB with high coverage of single sided 1 oz copper, in still air conditions; device measured when
operating in steady state condition.
6. Same as note (5), except the device is mounted on 50mm X 50mm single sided 2oz weight copper.
7. Thermal resistance from junction to solder-point (at the end of the collector lead).
8. Refer to JEDEC specification JESD22-A114 and JESD22-A115.
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© Diodes Incorporated
FZT658
Document Number DS33153 Rev. 5 - 2
A Product Line of
Diodes Incorporated
FZT658
Thermal Characteristics and Derating Information
70
50
40
30
20
10
0
T
amb=25°C
T
amb=25°C
60
50
40
30
25mm x 25mm
2oz FR4
50mm x 50mm
2oz FR4
D=0.5
D=0.5
Single Pulse
D=0.05
D=0.1
10 100 1k
Single Pulse
D=0.05
D=0.1
20 D=0.2
10
D=0.2
0
100µ 1m 10m 100m
1
100µ 1m 10m 100m
100 1k
Pulse Widt1h (s) 10
Pulse Width (s)
Transient Thermal Impedance
Transient Thermal Impedance
3.0
Single Pulse
Tamb=25°C
50mm x 50mm
2oz FR4
100
2.5
2.0
1.5
1.0
0.5
0.0
25mm x 25mm
2oz FR4
50mm x 50mm
2oz FR4
10
25mm x 25mm
2oz FR4
1
100µ 1m 10m 100m
1
10 100 1k
0
20 40 60 80 100 120 140 160
Pulse Width (s)
Temperature (°C)
Pulse Power Dissipation
Derating Curve
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© Diodes Incorporated
FZT658
Document Number DS33153 Rev. 5 - 2
A Product Line of
Diodes Incorporated
FZT658
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 9)
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Symbol
BVCBO
BVCEO
BVEBO
ICBO
Min
400
400
7
Typ
−
Max
−
Unit
V
Test Condition
IC = 100µA
IC = 1mA
V
−
−
V
−
−
IE = 100µA
VCB = 320V
VEB = 6V
100
100
0.30
0.25
0.50
0.9
1.0
−
nA
nA
−
−
Emitter Cut-off Current
IEBO
−
−
I
C = 20mA, IB = 1mA
Collector-Emitter Saturation Voltage (Note 9)
V
VCE(sat)
−
−
IC = 50mA, IB = 5mA
IC = 100mA, IB = 10mA
IC = 100mA, IB = 10mA
IC = 100mA, VCE = 5V
Base-Emitter Saturation Voltage (Note 9)
Base-Emitter Turn-On Voltage (Note 9)
V
V
VBE(sat)
VBE(on)
−
−
−
−
−
−
−
50
50
40
I
C = 1mA, VCE = 5V
DC Current Gain (Note 9)
hFE
−
−
IC = 100mA, VCE = 5V
IC = 200mA, VCE = 10V
−
V
CE = 20V, IC = 10mA,
Current Gain-Bandwidth Product (Note 9)
Output Capacitance (Note 9)
50
MHz
pF
fT
−
−
f = 20MHz
10
130
Cobo
ton
−
−
−
−
−
−
VCB = 20V, f = 1MHz
I
C = 100mA, VCC = 100V
Switching Times
ns
IB1 = 10mA, IB2 = -20mA
3,300
toff
Note:
9. Measured under pulsed conditions. Pulse width • 300µs. Duty cycle• 2%
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© Diodes Incorporated
FZT658
Document Number DS33153 Rev. 5 - 2
A Product Line of
Diodes Incorporated
FZT658
Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
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FZT658
Document Number DS33153 Rev. 5 - 2
A Product Line of
Diodes Incorporated
FZT658
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
SOT223
Dim Min Max Typ
1.55 1.65 1.60
A1 0.010 0.15 0.05
A
b1
b2
C
D
E
E1
e
e1
L
2.90 3.10 3.00
0.60 0.80 0.70
0.20 0.30 0.25
6.45 6.55 6.50
3.45 3.55 3.50
6.90 7.10 7.00
—
—
—
—
4.60
2.30
0.85 1.05 0.95
0.84 0.94 0.89
A
Q
All Dimensions in mm
A1
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X1
Y1
Dimensions Value (in mm)
X1
X2
Y1
Y2
C1
C2
3.3
1.2
1.6
1.6
6.4
2.3
C1
Y2
C2
X2
Note: For high voltage applications, the appropriate industry sector guidelines should be considered with regards to voltage spacing between terminals.
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© Diodes Incorporated
FZT658
Document Number DS33153 Rev. 5 - 2
A Product Line of
Diodes Incorporated
FZT658
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
This document is written in English but may be translated into multiple languages for reference. Only the English version of this document is the
final and determinative format released by Diodes Incorporated.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2013, Diodes Incorporated
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© Diodes Incorporated
FZT658
Document Number DS33153 Rev. 5 - 2
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