FZT658TC [DIODES]
Power Bipolar Transistor, 0.5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin;
| 型号： | FZT658TC |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Power Bipolar Transistor, 0.5A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 4 Pin 晶体 晶体管 功率双极晶体管 开关 光电二极管 高压 局域网 |
| 文件： | 总2页 (文件大小：81K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SOT223 NPN SILICON PLANAR
HIGH VOLTAGE TRANSISTOR
ISSUE 4 - OCTOBER 1995
FZT658
FEATURES
*
*
400 Volt VCEO
C
Low saturation voltage
E
C
COMPLEMENTARY TYPE -
PARTMARKING DETAIL -
FZT758
FZT658
B
ABSOLUTE MAXIMUM RATINGS.
PARAMETER
SYMBOL
VCBO
VCEO
VEBO
ICM
VALUE
400
400
5
UNIT
V
Collector-Base Voltage
Collector-Emitter Voltage
V
Emitter-Base Voltage
V
Peak Pulse Current
1
A
Continuous Collector Current
Power Dissipation at Tamb=25°C
Operating and Storage Temperature Range
ELECTRICAL CHARACTERISTICS (at T
IC
0.5
2
A
Ptot
W
Tj:Tstg
-55 to +150
°C
= 25°C unless otherwise stated).
amb
PARAMETER
SYMBOL MIN.
MAX.
UNIT
V
CONDITIONS.
IC=100µA
IC=10mA*
IE=100µA
VCB=320V
VEB=4V
Breakdown Voltage
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
400
400
5
V
V
Collector Cut-Off Current
Emitter Cut-Off Current
100
100
nA
nA
IEBO
Collector-Emitter
Saturation Voltage
VCE(sat)
0.3
0.25
0.5
V
V
V
IC=20mA, IB=1mA*
IC=50mA, IB=5mA*
IC=100mA, IB=10mA
Base-Emitter
Saturation Voltage
VBE(sat)
VBE(on)
hFE
0.9
V
IC=100mA, IB=10mA*
Base-Emitter
Turn-On Voltage
1.0
V
IC=100mA, VCE=5V*
Static Forward Current
Transfer Ratio
50
50
40
IC=1mA, VCE=5V*
IC=100mA, VCE=5V*
IC=200mA, VCE=10V*
Transition Frequency
fT
50
MHz
IC=10mA, VCE=20V
f=20MHz
Output Capacitance
Switching Times
Cobo
ton
10
pF
ns
ns
VCB=20V, f=1MHz
130
IC=100mA, VCC=100V
IB1=10mA, IB2=-20mA
3300
toff
*Measured under pulsed conditions. Pulse Width=300µs. Duty cycle ≤2%
Spice parameter data is available upon request for this device
3 - 215
FZT658
TYPICAL CHARACTERISTICS
I
- Collector Current (Amps)
I - Collector Current (Amps)
VCE(sat) v IC
VCE(sat) v IC
I
- Collector Current (Amps)
I
- Collector Current (Amps)
hFE v IC
VBE(sat) v IC
1
0.1
0.01
0.001
µ
1
10
100
1000
I
- Collector Current (Amps)
VCE - Collector Emitter Voltage (V)
VBE(on) v IC
Safe Operating Area
3 - 216
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DIODES
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