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FZT660 [ETC]

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FZT660
型号： FZT660
厂家： ETC    ETC
描述：

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中文：  中文翻译
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Index of /ds/FZ/  
Name  
Last modified  
Size Description  
Parent Directory  
FZT560.pdf  
03-Dec-99 15:45 44K  
03-Dec-99 15:45 44K  
22-Dec-99 00:08 28K  
03-Dec-99 15:45 44K  
03-Dec-99 15:45 44K  
22-Dec-99 00:08 27K  
22-Dec-99 00:08 44K  
FZT560A.pdf  
FZT649.pdf  
FZT660.pdf  
FZT660A.pdf  
FZT749.pdf  
FZT790A.pdf  
Discrete Power & Signal  
Technologies  
July 1998  
FZT560 / FZT560A  
C
E
C
B
SOT-223  
NPN Low Saturation Transistor  
These devices are designed with high current gain and low saturation voltage with collector currents up to 3A  
continuous.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
FZT560/FZT560A  
Symbol  
VCEO  
VCBO  
VEBO  
IC  
Parameter  
Units  
Collector-Emitter Voltage  
60  
V
Collector-Base Voltage  
Emitter-Base Voltage  
80  
V
V
5
Collector Current - Continuous  
3
A
Operating and Storage Junction Temperature Range  
-55 to +150  
°C  
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150°C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Max  
Characteristic  
Symbol  
Units  
FZT560/FZT560A  
Total Device Dissipation  
2
W
PD  
Thermal Resistance, Junction to Ambient  
62.5  
°C/W  
RqJA  
ã
1998 Fairchild Semiconductor Corporation  
Page 1 of 2  
fzt560.lwpPrNA 7/10/98 revC  
 
NPN Low Saturation Transistor  
(continued)  
Electrical Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Test Conditions  
Min  
Max  
Units  
OFF CHARACTERISTICS  
Collector-Emitter Breakdown Voltage  
Collector-Base Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
60  
80  
5
V
V
V
BVCEO  
BVCBO  
BVEBO  
ICBO  
IC = 10 mA  
IC = 100 mA  
IE = 100 mA  
100  
10  
nA  
uA  
VCB = 30 V  
VCB = 30 V, TA=100°C  
Emitter Cutoff Current  
100  
nA  
IEBO  
VEB = 4V  
ON CHARACTERISTICS*  
DC Current Gain  
hFE  
70  
100  
250  
80  
-
IC = 100 mA, VCE = 2 V  
300  
550  
IC = 500 mA, VCE = 2 V FZT560  
FZT560A  
IC = 1 A, VCE = 2 V  
IC = 3 A, VCE = 2 V  
25  
Collector-Emitter Saturation Voltage  
300  
450  
400  
1.25  
mV  
VCE(sat)  
IC = 1 A, IB = 100 mA  
IC = 3 A, IB = 300 mA FZT560  
FZT560A  
Base-Emitter Saturation Voltage  
Base-Emitter On Voltage  
V
V
VBE(sat)  
VBE(on)  
IC = 1 A, IB = 100 mA  
IC = 1 A, VCE = 2 V  
1
SMALL SIGNAL CHARACTERISTICS  
Output Capacitance  
Cobo  
30  
pF  
-
VCB = 10 V, IE = 0, f = 1MHz  
Transition Frequency  
fT  
75  
IC = 100 mA,VCE = 5 V, f=100MHz  
*Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2.0%  
ã
1998 Fairchild Semiconductor Corporation  
Page 2 of 2  
fzt560.lwpPrNA 7/10/98 revC  
Discrete Power & Signal  
Technologies  
July 1998  
FZT649  
E
B
SOT-223  
NPN Low Saturation Transistor  
These devices are designed with high current gain and low saturation voltage with collector currents up to 3A  
continuous.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
FZT649  
Symbol  
Parameter  
Units  
Collector-Emitter Voltage  
25  
V
VCEO  
Collector-Base Voltage  
Emitter-Base Voltage  
35  
5
V
V
VCBO  
VEBO  
Collector Current - Continuous  
3
A
IC  
Operating and Storage Junction Temperature Range  
-55 to +150  
°C  
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150°C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Max  
Characteristic  
Symbol  
Units  
FZT649  
Total Device Dissipation  
Thermal Resistance, Junction to Ambient  
2
W
PD  
62.5  
°C/W  
RqJA  
Page 1 of 2  
ã
1998 Fairchild Semiconductor Corporation  
fzt649.lwpPrNC 7/10/98 revB  
 
NPN Low Saturation Transistor  
(continued)  
Electrical Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Test Conditions  
Min  
Max  
Units  
OFF CHARACTERISTICS  
Collector-Emitter Breakdown Voltage  
Collector-Base Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
25  
35  
5
V
V
V
BVCEO  
BVCBO  
BVEBO  
ICBO  
IC = 10 mA  
IC = 100 mA  
IE = 100 mA  
100  
10  
nA  
uA  
VCB = 30 V  
VCB = 30 V, TA=100°C  
Emitter Cutoff Current  
100  
nA  
IEBO  
VEB = 4V  
ON CHARACTERISTICS*  
DC Current Gain  
hFE  
70  
100  
75  
-
IC = 50 mA, VCE = 2 V  
IC = 1 A, VCE = 2 V  
IC = 2 A, VCE = 2 V  
IC = 6 A, VCE = 2 V  
300  
15  
Collector-Emitter Saturation Voltage  
300  
600  
mV  
VCE(sat)  
IC = 1 A, IB = 100 mA  
IC = 3 A, IB = 300 mA  
Base-Emitter Saturation Voltage  
Base-Emitter On Voltage  
1.25  
1
V
V
VBE(sat)  
VBE(on)  
IC = 1 A, IB = 100 mA  
IC = 1 A, VCE = 2 V  
SMALL SIGNAL CHARACTERISTICS  
Output Capacitance  
Cobo  
50  
pF  
-
VCB = 10 V, IE = 0, f = 1MHz  
Transition Frequency  
fT  
150  
IC = 100 mA,VCE = 5 V, f=100MHz  
*Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2.0%  
Page 2 of 2  
ã
1998 Fairchild Semiconductor Corporation  
fzt649.lwpPrNC 7/10/98 revB  
Page 3 of 2  
ã
1998 Fairchild Semiconductor Corporation  
fzt649.lwpPrNC 7/10/98 revB  
Discrete Power & Signal  
Technologies  
July 1998  
FZT660 / FZT660A  
E
B
SOT-223  
PNP Low Saturation Transistor  
These devices are designed with high current gain and low saturation voltage with collector currents up to 3A  
continuous.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
FZT660/FZT660A  
Symbol  
VCEO  
VCBO  
VEBO  
IC  
Parameter  
Units  
Collector-Emitter Voltage  
60  
V
Collector-Base Voltage  
Emitter-Base Voltage  
80  
V
V
5
Collector Current - Continuous  
3
A
Operating and Storage Junction Temperature Range  
-55 to +150  
°C  
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150°C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Max  
Characteristic  
Symbol  
Units  
FZT660/FZT660A  
Total Device Dissipation  
2
W
PD  
Thermal Resistance, Junction to Ambient  
62.5  
°C/W  
RqJA  
ã
1998 Fairchild Semiconductor Corporation  
Page 1 of 2  
fzt660.lwpPrPA 7/10/98 revC  
 
PNP Low Saturation Transistor  
(continued)  
Electrical Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Test Conditions  
Min  
Max  
Units  
OFF CHARACTERISTICS  
Collector-Emitter Breakdown Voltage  
Collector-Base Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
60  
80  
5
V
V
V
BVCEO  
BVCBO  
BVEBO  
ICBO  
IC = 10 mA  
IC = 100 mA  
IE = 100 mA  
100  
10  
nA  
uA  
VCB = 30 V  
VCB = 30 V, TA=100°C  
Emitter Cutoff Current  
100  
nA  
IEBO  
VEB = 4V  
ON CHARACTERISTICS*  
DC Current Gain  
hFE  
70  
100  
250  
80  
-
IC = 100 mA, VCE = 2 V  
300  
550  
IC = 500 mA, VCE = 2 V FZT660  
FZT660A  
IC = 1 A, VCE = 2 V  
IC = 3 A, VCE = 2 V  
25  
Collector-Emitter Saturation Voltage  
300  
550  
500  
1.25  
mV  
VCE(sat)  
IC = 1 A, IB = 100 mA  
IC = 3 A, IB = 300 mA FZT660  
FZT660A  
Base-Emitter Saturation Voltage  
Base-Emitter On Voltage  
V
V
VBE(sat)  
VBE(on)  
IC = 1 A, IB = 100 mA  
IC = 1 A, VCE = 2 V  
1
SMALL SIGNAL CHARACTERISTICS  
Output Capacitance  
Cobo  
45  
pF  
-
VCB = 10 V, IE = 0, f = 1MHz  
Transition Frequency  
fT  
75  
IC = 100 mA,VCE = 5 V, f=100MHz  
*Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2.0%  
Page 2 of 2  
fzt660.lwpPrPA 7/10/98 revC  
Discrete Power & Signal  
Technologies  
July 1998  
FZT749  
E
B
SOT-223  
PNP Low Saturation Transistor  
These devices are designed with high current gain and low saturation voltage with collector currents up to 3A  
continuous.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
FZT749  
Symbol  
Parameter  
Units  
Collector-Emitter Voltage  
25  
V
VCEO  
Collector-Base Voltage  
Emitter-Base Voltage  
35  
5
V
V
VCBO  
VEBO  
Collector Current - Continuous  
3
A
IC  
Operating and Storage Junction Temperature Range  
-55 to +150  
°C  
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150°C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Max  
Characteristic  
Symbol  
Units  
FZT749  
Total Device Dissipation  
Thermal Resistance, Junction to Ambient  
2
W
PD  
62.5  
°C/W  
RqJA  
ã
1998 Fairchild Semiconductor Corporation  
Page 1 of 2  
fzt749.lwpPrPC 7/10/98 revB  
 
PNP Low Saturation Transistor  
(continued)  
Electrical Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Test Conditions  
Min  
Max  
Units  
OFF CHARACTERISTICS  
Collector-Emitter Breakdown Voltage  
Collector-Base Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
25  
35  
5
V
V
V
BVCEO  
BVCBO  
BVEBO  
ICBO  
IC = 10 mA  
IC = 100 mA  
IE = 100 mA  
100  
10  
nA  
uA  
VCB = 30 V  
VCB = 30 V, TA=100°C  
Emitter Cutoff Current  
100  
nA  
IEBO  
VEB = 4V  
ON CHARACTERISTICS*  
DC Current Gain  
hFE  
70  
100  
75  
-
IC = 50 mA, VCE = 2 V  
IC = 1 A, VCE = 2 V  
IC = 2 A, VCE = 2 V  
IC = 6 A, VCE = 2 V  
300  
15  
Collector-Emitter Saturation Voltage  
300  
600  
mV  
VCE(sat)  
IC = 1 A, IB = 100 mA  
IC = 3 A, IB = 300 mA  
Base-Emitter Saturation Voltage  
Base-Emitter On Voltage  
1.25  
1
V
V
VBE(sat)  
VBE(on)  
IC = 1 A, IB = 100 mA  
IC = 1 A, VCE = 2 V  
SMALL SIGNAL CHARACTERISTICS  
Output Capacitance  
Cobo  
100  
pF  
-
VCB = 10 V, IE = 0, f = 1MHz  
Transition Frequency  
fT  
100  
IC = 100 mA,VCE = 5 V, f=100MHz  
*Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2.0%  
Page 2 of 2  
fzt749.lwpPrPC 7/10/98 revB  
Discrete Power & Signal  
Technologies  
July 1998  
FZT790A  
C
E
C
B
SOT-223  
PNP Low Saturation Transistor  
These devices are designed with high current gain and low saturation voltage with collector currents up to 3A  
continuous.  
Absolute Maximum Ratings*  
TA = 25°C unless otherwise noted  
FZT790A  
Symbol  
VCEO  
VCBO  
VEBO  
IC  
Parameter  
Units  
Collector-Emitter Voltage  
40  
V
Collector-Base Voltage  
Emitter-Base Voltage  
50  
V
V
5
Collector Current - Continuous  
3
A
Operating and Storage Junction Temperature Range  
-55 to +150  
°C  
TJ, Tstg  
*These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.  
NOTES:  
1) These ratings are based on a maximum junction temperature of 150°C.  
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.  
Thermal Characteristics  
TA = 25°C unless otherwise noted  
Max  
Characteristic  
Symbol  
Units  
FZT790A  
Total Device Dissipation  
2
W
PD  
Thermal Resistance, Junction to Ambient  
62.5  
°C/W  
RqJA  
ã
1998 Fairchild Semiconductor Corporation  
Page 1 of 2  
fzt790a.lwpPrPA 7/10/98 revB  
 
PNP Low Saturation Transistor  
(continued)  
Electrical Characteristics  
TA = 25°C unless otherwise noted  
Symbol  
Parameter  
Test Conditions  
Min  
Max  
Units  
OFF CHARACTERISTICS  
Collector-Emitter Breakdown Voltage  
Collector-Base Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Collector Cutoff Current  
40  
50  
5
V
V
V
BVCEO  
BVCBO  
BVEBO  
ICBO  
IC = 10 mA  
IC = 100 mA  
IE = 100 mA  
100  
10  
nA  
uA  
VCB = 30 V  
VCB = 30 V, TA=100°C  
Emitter Cutoff Current  
100  
nA  
IEBO  
VEB = 4V  
ON CHARACTERISTICS*  
DC Current Gain  
hFE  
300  
250  
200  
150  
800  
-
IC = 10 mA, VCE = 2 V  
IC = 500 mA, VCE = 2 V  
IC = 1 A, VCE = 2 V  
IC = 2 A, VCE = 2 V  
Collector-Emitter Saturation Voltage  
250  
450  
750  
mV  
VCE(sat)  
IC = 500 mA, IB = 5 mA  
IC = 1 A, IB = 10 mA  
IC = 2 A, IB = 50 mA  
Base-Emitter Saturation Voltage  
1
V
-
VBE(sat)  
IC = 1 A, IB = 10 mA  
SMALL SIGNAL CHARACTERISTICS  
Transition Frequency  
fT  
100  
IC = 50 mA,VCE = 5 V, f=50MHz  
*Pulse Test: Pulse Width £ 300 ms, Duty Cycle £ 2.0%  
Page 2 of 2  
fzt790a.lwpPrPA 7/10/98 revB  

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