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DMP3098LDM-7 [DIODES]

P-CHANNEL ENHANCEMENT MODE MOSFET; P沟道增强型MOSFET
DMP3098LDM-7
型号： DMP3098LDM-7
厂家： DIODES INCORPORATED    DIODES INCORPORATED
描述：

P-CHANNEL ENHANCEMENT MODE MOSFET
P沟道增强型MOSFET
文件： 总4页 (文件大小：235K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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DMP3098LDM  
P-CHANNEL ENHANCEMENT MODE MOSFET  
Features  
Mechanical Data  
•
•
•
•
Case: SOT-26  
•
Low RDS(ON)  
:
Case Material - Molded Plastic. UL Flammability Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020D  
Terminals: Finish - Matte Tin Solderable per MIL-STD-202,  
Method 208  
Terminal Connections: See Diagram  
Marking Information: See Page 4  
Ordering Information: See page 4  
Weight: 0.008 grams (approximate)  
•
•
65mΩ @VGS = -10V  
115mΩ @VGS = -4.5V  
•
•
•
•
Low Input/Output Leakage  
Lead Free By Design/RoHS Compliant (Note 3)  
Qualified to AEC-Q101 Standards for High Reliability  
"Green" Device (Note 4)  
•
•
•
•
SOT-26  
D
D
S
D
D
G
TOP VIEW  
TOP VIEW  
Internal Schematic  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Drain-Source Voltage  
Symbol  
Value  
-30  
Unit  
V
VDSS  
VGSS  
Gate-Source Voltage  
V
±20  
Drain Current (Note 1) Continuous  
TA = 25°C  
TA = 70°C  
-4.0  
-3.0  
A
A
ID  
Pulsed Drain Current (Note 2)  
-14  
IDM  
Thermal Characteristics  
Characteristic  
Total Power Dissipation (Note 1)  
Symbol  
Value  
1.25  
Unit  
W
PD  
Thermal Resistance, Junction to Ambient (Note 1); Steady-State  
Operating and Storage Temperature Range  
100  
°C/W  
°C  
Rθ  
JA  
-55 to +150  
TJ, TSTG  
Notes:  
1. Device mounted on 1"x1", FR-4 PC board on 0.1in.2 pads on 2 oz. Copper pads and test pulse width t ≤10s.  
2. Repetitive Rating, pulse width limited by junction temperature.  
3. No purposefully added lead.  
4. Diodes Inc's "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
1 of 4  
www.diodes.com  
October 2008  
© Diodes Incorporated  
DMP3098LDM  
Document number: DS31446 Rev. 3 - 2  
DMP3098LDM  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
STATIC PARAMETERS  
Symbol  
Min  
Typ  
Max  
Unit  
Test Condition  
Drain-Source Breakdown Voltage  
Zero Gate Voltage Drain Current  
Gate-Body Leakage Current  
Gate Threshold Voltage  
-30  
⎯
⎯
V
μA  
nA  
V
BVDSS  
IDSS  
⎯
⎯
⎯
⎯
⎯
⎯
-1  
ID = -250μA, VGS = 0V  
VDS = -30V, VGS = 0V  
DS = 0V, VGS = ±20V  
VDS = VGS, ID = -250μA  
VGS = -4.5V, VDS = -5V  
TJ = 25°C  
IGSS  
±100  
-2.1  
⎯
V
-1.0  
VGS(th)  
ID (ON)  
On State Drain Current (Note 5)  
-15  
A
56  
98  
V
V
GS = -10V, ID = -4.0A  
GS = -4.5V, ID = -3.0A  
65  
115  
Static Drain-Source On-Resistance (Note 5)  
RDS (ON)  
⎯
mΩ  
Forward Transconductance (Note 5)  
Diode Forward Voltage (Note 5)  
DYNAMIC PARAMETERS (Note 6)  
Input Capacitance  
5.3  
S
V
gFS  
⎯
⎯
⎯
-1.2  
VDS = -10V, ID = -4.0A  
IS = -1.7A, VGS = 0V  
0.79  
VSD  
336  
70  
pF  
pF  
pF  
Ω
Ciss  
Coss  
Crss  
RG  
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
V
DS = -25V, VGS = 0V  
Output Capacitance  
f = 1.0MHz  
Reverse Transfer Capacitance  
Gate Resistance  
49  
4.6  
VDS = 0V, VGS = 0V, f = 1.0MHz  
SWITCHING CHARACTERISTICS  
4.0  
7.8  
VDS = -15V, VGS = -4.5V, ID = -5.0A  
Total Gate Charge  
Qg  
⎯
⎯
VDS = -15V, VGS = -10V, ID = -5.0A  
VDS = -15V, VGS = -4.5V, ID = -5.0A  
VDS = -15V, VGS = -4.5V, ID = -5.0A  
nC  
ns  
Gate-Source Charge  
Gate-Drain Charge  
Turn-On Delay Time  
Rise Time  
1.0  
2.5  
6.0  
5.0  
17.6  
9.5  
Qgs  
Qgd  
td(on)  
tr  
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
V
DS = -15V, VGS = -10V,  
I
D = -1.0A, RG = 6.0Ω  
Turn-Off Delay Time  
Fall Time  
td(off)  
tf  
Notes:  
5. Test pulse width t = 300μs.  
6. Guaranteed by design. Not subject to production testing.  
20  
20  
V
= -5V  
DS  
T
= 150°C  
A
V
= -10V  
16  
12  
8
16  
12  
8
GS  
T
= 125°C  
A
T
= 25°C  
A
T
= -55°C  
A
V
= -4.5V  
GS  
4
0
4
0
V
= -3.0V  
GS  
V
= -2.5V  
V
= -1.5V  
GS  
GS  
1
2
3
4
5
6
0
1
2
3
4
5
-VDS, DRAIN-SOURCE VOLTAGE (V)  
-VGS, GATE SOURCE VOLTAGE (V)  
Fig. 1 Typical Output Characteristics  
Fig. 2 Typical Transfer Characteristics  
2 of 4  
www.diodes.com  
October 2008  
© Diodes Incorporated  
DMP3098LDM  
Document number: DS31446 Rev. 3 - 2  
DMP3098LDM  
1
0.14  
0.12  
T
= 150°C  
A
T
= 125°C  
= 85°C  
A
0.10  
0.08  
0.06  
0.04  
T
A
V
= -4.5V  
GS  
T
= 25°C  
A
0.1  
T
= -55°C  
A
V
= -10V  
GS  
0.02  
0
0.01  
0
4
8
12  
-ID, DRAIN CURRENT (A)  
Fig. 3 Typical On-Resistance  
vs. Drain Current and Gate Voltage  
16  
20  
0
2
4
6
8
10  
-ID, DRAIN CURRENT (A)  
Fig. 4 Typical On-Resistance  
vs. Drain Current and Temperature  
1.6  
1.4  
1,000  
V
I
= -10V  
GS  
= -5.3A  
D
C
iss  
V
= -4.5V  
GS  
1.2  
1.0  
I
= -4.2A  
D
100  
C
oss  
C
rss  
0.8  
0.6  
10  
-50 -25  
TA, AMBIENT TEMPERATURE (°C)  
Fig. 5 On-Resistance Variation with Temperature  
0
25  
50  
75 100 125 150  
0
5
10  
15  
20  
25  
30  
-VDS, DRAIN-SOURCE VOLTAGE (V)  
Fig. 6 Typical Capacitance  
2.4  
2.0  
10  
8
I
= -250µA  
D
T
= 25°C  
A
6
4
1.6  
1.2  
0.8  
2
0
-50 -25  
0
25  
50  
75 100 125 150  
0.4  
0.6  
0.8  
1
1.2  
TA, AMBIENT TEMPERATURE (°C)  
Fig. 7 Gate Threshold Variation vs. Ambient Temperature  
-VSD, SOURCE-DRAIN VOLTAGE (V)  
Fig. 8 Diode Forward Voltage vs. Current  
3 of 4  
www.diodes.com  
October 2008  
© Diodes Incorporated  
DMP3098LDM  
Document number: DS31446 Rev. 3 - 2  
DMP3098LDM  
Ordering Information (Note 7)  
Part Number  
Case  
Packaging  
DMP3098LDM-7  
SOT-26  
3000/Tape & Reel  
Notes:  
7. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.  
Marking Information  
DMB = Product Type Marking Code  
YM = Date Code Marking  
Y = Year (ex: V = 2008)  
DMB  
M = Month (ex: 9 = September)  
Date Code Key  
Year  
2008  
2009  
2010  
2011  
2012  
2013  
2014  
2015  
Code  
V
W
X
Y
Z
A
B
C
Month  
Code  
Jan  
1
Feb  
2
Mar  
3
Apr  
4
May  
5
Jun  
6
Jul  
7
Aug  
8
Sep  
9
Oct  
O
Nov  
N
Dec  
D
Package Outline Dimensions  
A
SOT-26  
Dim Min Max Typ  
B
C
A
B
C
D
H
J
K
L
M
0.35 0.50 0.38  
1.50 1.70 1.60  
2.70 3.00 2.80  
0.95  
⎯
⎯
2.90 3.10 3.00  
0.013 0.10 0.05  
1.00 1.30 1.10  
0.35 0.55 0.40  
0.10 0.20 0.15  
H
K
M
J
0°  
8°  
α
⎯
L
D
All Dimensions in mm  
Suggested Pad Layout  
E
E
Dimensions Value (in mm)  
Z
G
X
Y
C
E
3.20  
1.60  
0.55  
0.80  
2.40  
0.95  
C
G
Y
Z
X
IMPORTANT NOTICE  
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes  
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product  
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall  
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,  
harmless against all damages.  
LIFE SUPPORT  
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written  
approval of the President of Diodes Incorporated.  
4 of 4  
www.diodes.com  
October 2008  
© Diodes Incorporated  
DMP3098LDM  
Document number: DS31446 Rev. 3 - 2  

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