DMP3098LSD-13 [DIODES]
DUAL P-CHANNEL ENHANCEMENT MODE MOSFET; 双P沟道增强型MOSFET
| 型号： | DMP3098LSD-13 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | DUAL P-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总4页 (文件大小：159K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMP3098LSD
DUAL P-CHANNEL ENHANCEMENT MODE MOSFET
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Features
Mechanical Data
•
•
Dual P-Channel MOSFET
Low On-Resistance
•
•
Case: SOP-8L
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020D
Terminals Connections: See Diagram
Terminals: Finish - Matte Tin annealed over Copper lead
frame. Solderable per MIL-STD-202, Method 208
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.072g (approximate)
•
•
65mΩ @ VGS = -10V
115mΩ @ VGS = -4.5V
•
•
•
•
•
•
•
•
•
•
Low Gate Threshold Voltage
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Lead Free By Design/RoHS Compliant (Note 2)
"Green" Device (Note 4)
Qualified to AEC-Q101 Standards for High Reliability
•
•
•
D1
D2
SOP-8L
S1
D1
G1
S2
G2
D1
D2
D2
G1
G2
S1
S2
TOP VIEW
TOP VIEW
P-Channel MOSFET
P-Channel MOSFET
Internal Schematic
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
-30
Units
V
V
Gate-Source Voltage
VGSS
±20
Drain Current (Note 1)
Steady
State
TA = 25°C
TA = 70°C
-4.4
-3.3
A
A
ID
Pulsed Drain Current (Note 3)
-15
IDM
Thermal Characteristics
Characteristic
Total Power Dissipation (Note 1)
Symbol
Value
1.8
Unit
W
PD
Thermal Resistance, Junction to Ambient (Note 1)
Operating and Storage Temperature Range
70
°C/W
Rθ
JA
-55 to +150
°C
TJ, TSTG
Notes:
1. Device mounted on 2 oz. 1” x 1” Copper pads on 2” x 2” FR-4 PCB.
2. No purposefully added lead.
3. Pulse width ≤10μS, Duty Cycle ≤1%.
4. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
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October 2008
© Diodes Incorporated
DMP3098LSD
Document number: DS31448 Rev. 3 - 2
DMP3098LSD
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-Source Leakage
Symbol
Min
Typ
Max
Unit
Test Condition
-30
⎯
⎯
V
BVDSS
IDSS
⎯
⎯
⎯
⎯
-1
VGS = 0V, ID = -250μA
VDS = -30V, VGS = 0V
VGS = ±20V, VDS = 0V
μA
nA
IGSS
±100
ON CHARACTERISTICS (Note 5)
Gate Threshold Voltage
-1
1.7
-2.1
V
VGS(th)
VDS = VGS, ID = -250μA
GS = -10V, ID = -5.0A
VGS = -4.5V, ID = -4.0A
VDS = -10V, ID = -5.0A
VGS = 0V, IS = -2.6A
V
56
98
65
115
⎯
⎯
Static Drain-Source On-Resistance
RDS (ON)
mΩ
Forward Transconductance
Diode Forward Voltage (Note 5)
DYNAMIC CHARACTERISTICS
Input Capacitance
5.2
S
V
gfs
⎯
-0.5
⎯
-1.2
VSD
⎯
336
70
pF
pF
pF
Ω
Ciss
Coss
Crss
RG
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
V
DS = -25V, VGS = 0V
Output Capacitance
f = 1.0MHz
Reverse Transfer Capacitance
Gate Resistance
49
4.6
VDS = 0V, VGS = 0V, f = 1.0MHz
SWITCHING CHARACTERISTICS
4.0
7.8
VDS = -15V, VGS = -4.5V,ID = -5.0A
VDS = -15V, VGS = -10V,ID = -5.0A
VDS = -15V, VGS = -4.5V,ID = -5.0A
Total Gate Charge
Qg
⎯
⎯
nC
ns
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
1.0
2.5
Qgs
Qgd
td(on)
tr
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
V
DS = -15V, VGS = -4.5V,ID = -5.0A
6.0
5.0
V
DS = -15V, VGS = -10V,
ID = -1A, RG = 6.0Ω
Turn-Off Delay Time
Fall Time
17.6
9.5
td(off)
tf
Notes:
5. Short duration pulse test used to minimize self-heating effect.
20
20
V
= -5V
DS
T
= 150°C
A
V
= -10V
16
12
8
16
12
8
GS
T
= 125°C
A
T
= 25°C
A
T
= -55°C
A
V
= -4.5V
GS
4
0
4
0
V
= -3.0V
GS
V
= -2.5V
V
= -1.5V
GS
GS
1
2
3
4
5
6
0
1
2
3
4
5
-VDS, DRAIN-SOURCE VOLTAGE (V)
-VGS, GATE SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
Fig. 2 Typical Transfer Characteristics
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© Diodes Incorporated
DMP3098LSD
Document number: DS31448 Rev. 3 - 2
DMP3098LSD
1
0.14
0.12
T
= 150°C
A
T
= 125°C
= 85°C
A
0.10
0.08
0.06
0.04
T
A
V
= -4.5V
GS
T
= 25°C
A
0.1
T
= -55°C
A
V
= -10V
GS
0.02
0
0.01
0
4
8
12
-ID, DRAIN CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
16
20
0
2
4
6
8
10
-ID, DRAIN CURRENT (A)
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
1.6
1.4
1,000
V
I
= -10V
GS
= -5.3A
D
C
iss
V
= -4.5V
GS
1.2
1.0
I
= -4.2A
D
100
C
oss
C
rss
0.8
0.6
10
-50 -25
TA, AMBIENT TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
0
25
50
75 100 125 150
0
5
10
15
20
25
30
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 6 Typical Capacitance
2.4
2.0
10
8
I
= -250µA
D
T
= 25°C
A
6
4
1.6
1.2
0.8
2
0
-50 -25
0
25
50
75 100 125 150
0.4
0.6
0.8
1
1.2
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
-VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
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October 2008
© Diodes Incorporated
DMP3098LSD
Document number: DS31448 Rev. 3 - 2
DMP3098LSD
Ordering Information (Note 6)
Part Number
DMP3098LSD-13
Case
SOP-8L
Packaging
2500/Tape & Reel
Notes:
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
Top View
8
5
Logo
P3098LD
Part no.
YY WW
Xth week: 01~52
Year: "07" =2007
"08" =2008
1
4
Package Outline Dimensions
SOP-8L
Dim
A
A1
A2
A3
b
Min
-
0.08
1.30
0.20 Typ.
0.3
Max
1.75
0.25
1.50
E1
E
GAUGE PLANE
SEATING PLANE
A1
L
0.5
D
E
E1
e
4.80
5.79
3.70
5.30
6.20
4.10
DETAIL A
7°~9°
h
1.27 Typ.
°
45
h
L
θ
-
0.35
1.27
8°
DETAIL A
A2
A3
0.38
0°
A
b
e
All Dimensions in mm
D
Suggested Pad Layout
X
Dimensions Value (in mm)
X
Y
C1
C2
0.60
1.55
5.4
C1
1.27
C2
Y
IMPORTANT NOTICE
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,
harmless against all damages.
LIFE SUPPORT
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written
approval of the President of Diodes Incorporated.
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www.diodes.com
October 2008
© Diodes Incorporated
DMP3098LSD
Document number: DS31448 Rev. 3 - 2
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DIODES
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