DMP3098LQ-7 [DIODES]
Power Field-Effect Transistor,;
| 型号： | DMP3098LQ-7 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Power Field-Effect Transistor, |
| 文件： | 总5页 (文件大小：273K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMP3098LQ
P-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features and Benefits
•
•
•
•
•
•
•
•
•
Low On-Resistance
ID
TA = +25°C
-3.8A
V(BR)DSS
RDS(on) max
Low Gate Threshold Voltage
70mΩ@ VGS = -10V
120mΩ@ VGS = -4.5V
Low Input Capacitance
-30V
-3.0A
Fast Switching Speed
Low Input/Output Leakage
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
Description and Applications
This new generation MOSFET has been designed to minimize the on-
state resistance (RDS(ON) and yet maintain superior switching
)
performance, making it ideal for high efficiency power management
applications.
Mechanical Data
•
•
Case: SOT23
•
•
•
•
Power Management Functions
Analog Switch
Case Material: Molded Plastic, “Green” Molding Compound
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish ⎯ Matte Tin annealed over Copper Leadframe
Solderable per MIL-STD-202, Method 208 e3
Terminal Connections: See Diagram
Load Switch
•
•
Boost Switch
•
•
Weight: 0.008 grams (approximate)
Drain
SOT23
D
Gate
S
G
Source
Top View
Pin Configuration
Equivalent Circuit
Ordering Information (Note 5)
Part Number
DMP3098LQ-7
Case
SOT23
Packaging
3,000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q10x qualified and are PPAP capable. Automotive, AEC-Q10x and standard products are electrically and thermally
the same, except where specified. For more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/.
5. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
DMB = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: A = 2013)
DMB
M = Month (ex: 9 = September)
Date Code Key
Year
2012
2013
2014
2015
2016
2017
2018
2019
Code
Z
A
B
C
D
E
F
G
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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June 2014
© Diodes Incorporated
DMP3098LQ
Document number: DS37337 Rev. 1 - 2
DMP3098LQ
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
-30
Units
V
V
Gate-Source Voltage
±20
VGSS
Steady
State
TA = +25°C
TA = +70°C
-3.8
-2.9
A
A
Drain Current (Note 6) VGS = -10V
Pulsed Drain Current (Note 7)
ID
-11
IDM
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Total Power Dissipation (Note 6)
Symbol
PD
Rθ
Value
1.08
Units
W
115
°C/W
°C
Thermal Resistance, Junction to Ambient @TA = +25°C (Note 6)
Operating and Storage Temperature Range
JA
-55 to +150
TJ, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Symbol
Min
Typ
Max
Unit
Test Condition
-30
⎯
V
BVDSS
IDSS
⎯
⎯
⎯
⎯
VGS = 0V, ID = -250μA
-800
±100
nA
nA
VDS = -30V, VGS = 0V
Gate-Source Leakage
IGSS
⎯
VGS = ±20V, VDS = 0V
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage
-1.0
-1.8
-2.1
V
VGS(th)
VDS = VGS, ID = -250μA
VGS = -10V, ID = -3.8A
VGS = -4.5V, ID = -3.0A
VDS = -5V, ID = -2.7A
VGS = 0V, IS = -2.7A
56
98
70
120
Static Drain-Source On-Resistance
mΩ
RDS(ON)
⎯
Forward Transfer Admittance
Diode Forward Voltage (Note 7)
DYNAMIC CHARACTERISTICS (Note 9)
Input Capacitance
3.6
S
V
|Yfs|
VSD
⎯
⎯
⎯
-1.26
⎯
336
70
1008
210
147
⎯
pF
pF
pF
Ω
Ciss
Coss
Crss
RG
⎯
⎯
⎯
⎯
Output Capacitance
V
DS = -25V, VGS = 0V, f = 1.0MHz
Reverse Transfer Capacitance
Gate Resistance
49
4.6
VGS = 0V, VDS = 0V, f = 1MHz
SWITCHING CHARACTERISTICS (Note 9)
VDS = -15V, VGS = -4.5V,
ID = -3.8A
4.0
8.0
⎯
Total Gate Charge
Qg
7.8
1.0
2.5
6.0
5.0
17.6
9.5
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
nC
ns
V
DS = -15V, VGS = -10V,
Gate-Source Charge
Gate-Drain Charge
Turn-On Delay Time
Rise Time
Qgs
Qgd
td(on)
tr
ID = -3.8A
⎯
12.0
10.0
35.2
19.0
V
DS = -15V, VGS = -10V,
ID = -1A, RG = 6.0Ω
Turn-Off Delay Time
Fall Time
td(off)
tf
Notes:
6. Device mounted on FR-4 PCB on 2 oz., 0.5 in.2 copper pads and t ≤5 sec.
7. Pulse width ≤10µS, Duty Cycle ≤1%.
8. Short duration pulse test used to minimize self-heating effect.
9. Guaranteed by design. Not subject to production testing.
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June 2014
© Diodes Incorporated
DMP3098LQ
Document number: DS37337 Rev. 1 - 2
DMP3098LQ
20
16
20
16
V
= -5V
DS
T
= 150°C
A
V
= -10V
GS
T
= 125°C
A
T
= 25°C
A
T
= -55°C
A
12
8
V
= -4.5V
12
8
GS
4
0
4
0
V
= -3.0V
GS
V
= -2.5V
V
= -1.5V
GS
GS
1
2
3
4
5
6
0
1
2
3
4
5
-VDS, DRAIN-SOURCE VOLTAGE (V)
-VGS, GATE SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristics
Fig. 2 Typical Transfer Characteristics
1
0.14
0.12
T
= 150°C
A
T
= 125°C
A
0.10
0.08
0.06
0.04
T
= 85°C
= 25°C
A
V
= -4.5V
GS
T
A
0.1
T
= -55°C
A
V
= -10V
GS
0.02
0
0.01
0
4
8
12
-ID, DRAIN CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
16
20
0
2
4
6
8
10
-ID, DRAIN CURRENT (A)
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
1.6
1.4
1,000
V
I
= -10V
GS
= -5.3A
D
C
iss
V
= -4.5V
GS
1.2
1.0
I
= -4.2A
D
100
C
oss
C
rss
0.8
0.6
10
-50 -25
TA, AMBIENT TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
0
25
50
75 100 125 150
0
5
10
15
20
25
30
-VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 6 Typical Capacitance
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© Diodes Incorporated
DMP3098LQ
Document number: DS37337 Rev. 1 - 2
DMP3098LQ
2.4
2.0
10
8
I
= -250µA
D
T
= 25°C
A
6
4
1.6
1.2
0.8
2
0
-50 -25
0
25
50
75 100 125 150
0.4
0.6
0.8
1
1.2
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
-VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
100
R
DS(on)
Limited
10
DC
1
P
= 10s
W
P
= 1s
W
P
= 100ms
W
P
= 10ms
W
P
= 1ms
0.1
W
P
= 100µs
W
TJ(max) = 150°C
= 25°C
T
P
= 10µs
A
W
Single Pulse
0.01
0.1
1
10
100
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 9 Safe Operation Area
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
All 7°
H
SOT23
GAUGE PLANE
Dim
A
B
C
D
F
G
H
Min
0.37
1.20
2.30
0.89
0.45
1.78
2.80
Max
0.51
1.40
2.50
1.03 0.915
0.60 0.535
Typ
0.40
1.30
2.40
0. 25
J
K
K1
a
M
A
L
L1
2.05
3.00
1.83
2.90
0.05
J
0.013 0.10
K
K1
L
L1
M
α
0.890 1.00 0.975
0.903 1.10 1.025
C
B
0.45
0.25
0.61
0.55
0.55
0.40
0.085 0.150 0.110
8°
D
G
F
All Dimensions in mm
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June 2014
© Diodes Incorporated
DMP3098LQ
Document number: DS37337 Rev. 1 - 2
DMP3098LQ
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
Y
Dimensions Value (in mm)
Z
2.9
0.8
0.9
2.0
1.35
Z
X
Y
C
E
C
E
X
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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final and determinative format released by Diodes Incorporated.
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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1. are intended to implant into the body, or
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representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2014, Diodes Incorporated
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© Diodes Incorporated
DMP3098LQ
Document number: DS37337 Rev. 1 - 2
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