DMN26D0UFB4 [DIODES]
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR; N沟道增强型网络场效晶体管
| 型号： | DMN26D0UFB4 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR |
| 文件： | 总6页 (文件大小：127K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMN26D0UFB4
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
Features
Mechanical Data
•
•
N-Channel MOSFET
Low On-Resistance:
•
•
Case: DFN1006H4-3
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.001 grams (approximate)
•
•
•
•
3.0 Ω @ 4.5V
4.0 Ω @ 2.5V
6.0 Ω @ 1.8V
10 Ω @ 1.5V
•
•
•
•
Very Low Gate Threshold Voltage, 1.2V max
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
ESD Protected Gate
Lead, Halogen and Antimony Free, RoHS Compliant (Note 2)
"Green" Device (Note 3)
•
•
•
•
•
•
•
•
•
•
•
Qualified to AEC-Q101 Standards for High Reliability
DFN1006H4-3
Drain
Body
Diode
S
Gate
D
Gate
Protection
Diode
G
Source
BOTTOM VIEW
ESD PROTECTED
Equivalent Circuit
TOP VIEW
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain Source Voltage
Symbol
VDSS
VGSS
ID
Value
20
Unit
V
Gate-Source Voltage
V
±10
230
805
Drain Current (Note 1)
mA
mA
Pulsed Drain Current
TP = 10µs
IDM
Thermal Characteristics @TA = 25°C unless otherwise specified
350
357
mW
°C/W
°C
Total Power Dissipation (Note 1) @TA = 25°C
Thermal Resistance, Junction to Ambient (Note 1)
PD
Rθ
JA
Operating and Storage Temperature Range
-55 to +150
TJ, TSTG
Notes:
1. Device mounted on FR-4 PCB, pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at
http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
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© Diodes Incorporated
DMN26D0UFB4
Document number: DS31775 Rev. 5 - 2
DMN26D0UFB4
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
20
V
BVDSS
IDSS
⎯
⎯
⎯
500
VGS = 0V, ID = 100μA
VDS = 20V, VGS = 0V
VGS = ±10V, VDS = 0V
VGS = ±5V, VDS = 0V
nA
@ TC = 25°C
⎯
±1
±100
μA
nA
Gate-Body Leakage
IGSS
⎯
⎯
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
0.6
0.9
V
VGS(th)
⎯
VDS = VGS, ID = 250μA
V
V
GS = 4.5V, ID = 100mA
GS = 2.5V, ID = 50mA
⎯
⎯
⎯
⎯
⎯
1.8
2.4
2.9
3.7
5.4
3.0
4.0
6.0
10.0
15.0
Static Drain-Source On-Resistance
RDS (ON)
Ω
VGS = 1.8V, ID = 20mA
V
V
GS = 1.5V, ID = 10mA
GS = 1.2V, ID = 1mA
Forward Transconductance
Source-Drain Diode Forward Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
100
0.5
242
mS
V
|Yfs|
VSD
⎯
1.4
VDS =10V, ID = 0.1A
VGS = 0V, IS = 115mA
⎯
14.1
2.9
pF
pF
pF
Ciss
Coss
Crss
⎯
⎯
⎯
⎯
⎯
⎯
V
DS = 15V, VGS = 0V
Output Capacitance
f = 1.0MHz
Reverse Transfer Capacitance
SWITCHING CHARACTERISTICS
Turn-On Time
1.6
TON
TOFF
12
29
⎯
⎯
⎯
⎯
VGS = 4.5V, VDD = 10V
ID = 200mA, RG = 2.0Ω
ns
Turn-Off Time
Notes:
4. Short duration pulse test used to minimize self-heating effect.
0.4
0.8
V
= 10V
DS
0.7
V
= 8V
V
= 4.5V
GS
GS
T
= -55°C
0.3
0.6
0.5
A
T
= 25°C
A
V
= 3.0V
= 2.5V
GS
T
= 85°C
A
T
= 125°C
A
0.2
0.1
0
0.4
0.3
0.2
T
= 150°C
V
A
GS
V
V
= 2.0V
GS
GS
0.1
0
= 1.5V
0
0.5
1
1.5
2
2.5
3
0
0.5
1
1.5
2
2.5
3
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
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DMN26D0UFB4
Document number: DS31775 Rev. 5 - 2
DMN26D0UFB4
5
4
4
3
2
1
V
= 4.5V
GS
T
= 150°C
A
T
= 125°C
= 85°C
3
A
T
V
= 1.8V
A
GS
T
= 25°C
A
2
1
T
= -55°C
V
= 2.5V
= 4.5V
A
GS
V
GS
0
0.01
0.1
1
0.01
0.1
ID, DRAIN CURRENT (A)
1
ID, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
2.0
1.8
4.0
3.5
1.6
V
= 4.5V
GS
3.0
I
= 500mA
D
1.4
1.2
1.0
0.8
2.5
2.0
V
= 2.5V
GS
I
= 150mA
D
V
I
= 2.5V
GS
= 150mA
D
1.5
V
= 4.5V
GS
I
= 500mA
D
1.0
0.5
0.6
0.4
-50 -25
0
25
50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
TA, AMBIENT TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
0.8
0.7
1.4
1.2
0.6
0.5
1.0
0.8
0.6
T
= 25°C
A
I
= 1mA
D
0.4
0.3
I
= 250µA
D
0.4
0.2
0
0.2
0.1
0
-50 -25
0
25
50
75 100 125 150
0
0.2 0.4
0.6 0.8
1
1.2 1.4 1.6
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
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DMN26D0UFB4
Document number: DS31775 Rev. 5 - 2
DMN26D0UFB4
10,000
1,000
100
20
15
f = 1MHz
T
= 150°C
= 125°C
A
C
iss
T
A
10
T
= 85°C
A
10
1
5
0
T
= 25°C
A
C
oss
T
= -55°C
A
C
rss
0.1
0
4
8
12
16
20
0
2
4
6
8
10 12 14 16 18 20
VDS, DRAIN-SOURCE VOLTAGE (V)
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Leakage Current vs. Drain-Source Voltage
Fig. 9 Typical Total Capacitance
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
D = 0.02
R
(t) = r(t) * R
θJA
θJA
R
= 278°C/W
θJA
0.01
D = 0.01
P(pk)
T
t
1
D = 0.005
t
2
- T = P * R (t)
J
A
θJA
Duty Cycle, D = t /t
1 2
D = Single Pulse
0.001
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1,000
t1, PULSE DURATION TIME (s)
Fig. 11 Transient Thermal Response
Ordering Information (Note 5)
Part Number
Case
Packaging
DMN26D0UFB4-7
DFN1006H4-3
3000/Tape & Reel
Notes:
5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
M1
M1 = Product Type Marking Code
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© Diodes Incorporated
DMN26D0UFB4
Document number: DS31775 Rev. 5 - 2
DMN26D0UFB4
Package Outline Dimensions
A
DFN1006H4-3
Dim Min
Max
Typ
A
A1
b1
b2
D
0.40
0.05 0.02
0.10 0.20 0.15
0.45 0.55 0.50
0.95 1.05 1.00
0.55 0.65 0.60
⎯
0
⎯
A1
D
E
b1
e
0.35
⎯
⎯
e
b2
E
L1
L2
L3
0.20 0.30 0.25
0.20 0.30 0.25
0.40
⎯
⎯
All Dimensions in mm
L2
L3
L1
Suggested Pad Layout
C
Dimensions Value (in mm)
X1
Z
G1
G2
X
1.1
0.3
0.2
0.7
0.25
0.4
0.7
X
G2
X1
Y
G1
C
Y
Z
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DMN26D0UFB4
Document number: DS31775 Rev. 5 - 2
DMN26D0UFB4
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDING TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
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Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
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indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
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LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2010, Diodes Incorporated
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© Diodes Incorporated
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Document number: DS31775 Rev. 5 - 2
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