DMN26D0UT-7 [DIODES]
N-CHANNEL ENHANCEMENT MODE MOSFET; N沟道增强型MOSFET
| 型号： | DMN26D0UT-7 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | N-CHANNEL ENHANCEMENT MODE MOSFET |
| 文件： | 总6页 (文件大小：144K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMN26D0UT
N-CHANNEL ENHANCEMENT MODE MOSFET
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Features
Mechanical Data
•
Low On-Resistance:
•
•
Case: SOT-523
•
•
•
•
3.0 Ω @ 4.5V
4.0 Ω @ 2.5V
6.0 Ω @ 1.8V
10 Ω @ 1.5V
Case Material: Molded Plastic, “Green” Molding Compound. UL
Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Terminals: Finish – Matte Tin annealed over Alloy 42 leadframe.
Solderable per MIL-STD-202, Method 208
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.002 grams (approximate)
•
•
•
•
•
•
•
•
•
•
Very Low Gate Threshold Voltage, 1.0V max
Low Input Capacitance
Fast Switching Speed
Low Input/Output Leakage
Ultra-Small Surface Mount Package
ESD Protected Gate
Lead, Halogen, and Antimony Free By Design/RoHS
Compliant (Note 2)
•
•
•
•
•
"Green" Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Drain
D
Gate
S
G
Gate
Protection
Diode
Source
ESD PROTECTED
TOP VIEW
EQUIVALENT CIRCUIT
TOP VIEW
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Drain Source Voltage
Symbol
VDSS
VGSS
ID
Value
20
Unit
V
Gate-Source Voltage
V
±10
230
805
Drain Current (Note 1)
mA
mA
Pulsed Drain Current
TP = 10µs
IDM
Thermal Characteristics @TA = 25°C unless otherwise specified
Total Power Dissipation (Note 1)
300
417
mW
°C/W
°C
PD
Rθ
Thermal Resistance, Junction to Ambient (Note 1)
JA
Operating and Storage Temperature Range
-55 to +150
TJ, TSTG
Notes:
1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which
can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
2. No purposefully added lead.
3. Diodes Inc.’s “Green” policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
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September 2009
© Diodes Incorporated
DMN26D0UT
Document number: DS31854 Rev. 2 - 2
DMN26D0UT
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Symbol
Min
Typ
Max
Unit
Test Condition
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
20
V
BVDSS
IDSS
⎯
⎯
⎯
500
VGS = 0V, ID = 100μA
VDS = 20V, VGS = 0V
nA
@ TC = 25°C
⎯
V
GS = ±10V, VDS = 0V
VGS = ±8V, VDS = 0V
GS = ±5V, VDS = 0V
±1
±500
±100
μA
nA
nA
Gate-Body Leakage
IGSS
⎯
⎯
V
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
0.5
1.0
V
VGS(th)
⎯
VDS = VGS, ID = 250μA
GS = 4.5V, ID = 100mA
VGS = 2.5V, ID = 50mA
GS = 1.8V, ID = 20mA
VGS = 1.5V, ID = 10mA
GS = 1.2V, ID = 1mA
V
1.8
2.4
2.9
3.7
5.4
3.0
4.0
6.0
10.0
15.0
⎯
⎯
⎯
⎯
⎯
Static Drain-Source On-Resistance
RDS (ON)
Ω
V
V
Forward Transconductance
Source-Drain Diode Forward Voltage
DYNAMIC CHARACTERISTICS
Input Capacitance
242
mS
V
|Yfs|
VSD
⎯
0.5
⎯
1.0
VDS =10V, ID = 0.1A
VGS = 0V, IS = 115mA
⎯
14.1
2.9
pF
pF
pF
Ciss
Coss
Crss
⎯
⎯
⎯
⎯
⎯
⎯
V
DS = 15V, VGS = 0V
Output Capacitance
f = 1.0MHz
Reverse Transfer Capacitance
1.6
SWITCHING CHARACTERISTICS, VGS = 4.5V (Note 5)
Turn-On Delay Time
Rise Time
3.8
7.9
td(on)
tr
td(off)
tf
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
VGS = 4.5V, VDD = 10V
ID = 200mA, RG = 2.0Ω
ns
Turn-Off Delay Time
Fall Time
13.4
15.2
Notes:
4. Short duration pulse test used to minimize self-heating effect.
5. Switching characteristics are independent of operating junction temperature.
0.4
0.8
V
= 10V
DS
0.7
V
= 8V
V
= 4.5V
GS
GS
T
= -55°C
0.3
0.6
0.5
A
T
= 25°C
A
V
= 3.0V
= 2.5V
GS
T
= 85°C
A
T
= 125°C
A
0.2
0.1
0
0.4
0.3
0.2
T
= 150°C
V
A
GS
V
V
= 2.0V
GS
GS
0.1
0
= 1.5V
0
0.5
1
1.5
2
2.5
3
0
0.5
1
1.5
2
2.5
3
VGS, GATE-SOURCE VOLTAGE (V)
Fig. 2 Typical Transfer Characteristic
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 1 Typical Output Characteristic
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September 2009
© Diodes Incorporated
DMN26D0UT
Document number: DS31854 Rev. 2 - 2
DMN26D0UT
5
4
4
3
2
1
V
= 4.5V
GS
T
= 150°C
A
T
= 125°C
3
A
T
= 85°C
= 25°C
V
= 1.8V
A
GS
T
A
2
1
T
= -55°C
V
= 2.5V
= 4.5V
A
GS
V
GS
0
0.01
0.1
1
0.01
0.1
ID, DRAIN CURRENT (A)
1
ID, DRAIN-SOURCE CURRENT (A)
Fig. 3 Typical On-Resistance
vs. Drain Current and Gate Voltage
Fig. 4 Typical On-Resistance
vs. Drain Current and Temperature
2.0
1.8
4.0
3.5
1.6
V
= 4.5V
GS
3.0
I
= 500mA
D
1.4
1.2
1.0
0.8
2.5
2.0
V
= 2.5V
GS
I
= 150mA
D
V
I
= 2.5V
GS
= 150mA
D
1.5
V
= 4.5V
GS
I
= 500mA
D
1.0
0.5
0.6
0.4
-50 -25
0
25
50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
TA, AMBIENT TEMPERATURE (°C)
Fig. 5 On-Resistance Variation with Temperature
TA, AMBIENT TEMPERATURE (°C)
Fig. 6 On-Resistance Variation with Temperature
0.8
0.7
1.4
1.2
0.6
0.5
1.0
0.8
0.6
T
= 25°C
A
I
= 1mA
D
0.4
0.3
I
= 250µA
D
0.4
0.2
0
0.2
0.1
0
-50 -25
0
25
50
75 100 125 150
0
0.2 0.4
0.6 0.8
1
1.2 1.4 1.6
TA, AMBIENT TEMPERATURE (°C)
Fig. 7 Gate Threshold Variation vs. Ambient Temperature
VSD, SOURCE-DRAIN VOLTAGE (V)
Fig. 8 Diode Forward Voltage vs. Current
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© Diodes Incorporated
DMN26D0UT
Document number: DS31854 Rev. 2 - 2
DMN26D0UT
10,000
1,000
100
20
15
f = 1MHz
T
= 150°C
= 125°C
A
C
iss
T
A
10
T
= 85°C
A
10
1
5
0
T
= 25°C
A
C
oss
T
= -55°C
A
C
rss
0.1
0
4
8
12
16
20
0
2
4
6
8
10 12 14 16 18 20
VDS, DRAIN-SOURCE VOLTAGE (V)
VDS, DRAIN-SOURCE VOLTAGE (V)
Fig. 10 Typical Leakage Current vs. Drain-Source Voltage
Fig. 9 Typical Total Capacitance
1
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.9
D = 0.05
D = 0.02
R
(t) = r(t) * R
θJA
θJA
R
= 278°C/W
θJA
0.01
D = 0.01
P(pk)
T
t
1
D = 0.005
t
2
- T = P * R (t)
J
A
θJA
Duty Cycle, D = t /t
1 2
D = Single Pulse
0.001
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1,000
t1, PULSE DURATION TIME (s)
Fig. 11 Transient Thermal Response
Ordering Information (Note 6)
Part Number
Case
Packaging
DMN26D0UT-7
SOT-523
3,000/Tape & Reel
Notes:
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
M1 = Product Type Marking Code
YM = Date Code Marking
Y = Year (ex: W = 2009)
M1
YM
M = Month (ex: 9 = September)
Date Code Key
Year
2009
2010
2011
2012
2013
2014
2015
Code
W
X
Y
Z
A
B
C
Month
Code
Jan
1
Feb
2
Mar
3
Apr
4
May
5
Jun
6
Jul
7
Aug
8
Sep
9
Oct
O
Nov
N
Dec
D
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September 2009
© Diodes Incorporated
DMN26D0UT
Document number: DS31854 Rev. 2 - 2
DMN26D0UT
Package Outline Dimensions
A
SOT-523
Dim
A
B
C
D
G
H
J
K
L
Min
Max
0.30
0.85
1.75
⎯
1.10
1.70
0.10
0.80
0.30
0.20
0.65
8°
Typ
0.22
0.80
1.60
0.50
1.00
1.60
0.05
0.75
0.22
0.12
0.50
⎯
0.15
0.75
1.45
⎯
0.90
1.50
0.00
0.60
0.10
0.10
0.45
0°
C
B
G
H
K
J
M
N
M
N
α
L
D
All Dimensions in mm
Suggested Pad Layout
Y
Dimensions Value (in mm)
Z
X
Y
C
E
1.8
0.4
0.51
1.3
Z
C
0.7
X
E
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September 2009
© Diodes Incorporated
DMN26D0UT
Document number: DS31854 Rev. 2 - 2
DMN26D0UT
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2009, Diodes Incorporated
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© Diodes Incorporated
DMN26D0UT
Document number: DS31854 Rev. 2 - 2
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DIODES
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