DMN2990UDJ_技术文档

DMN2990UDJ

DUAL N-CHANNEL ENHANCEMENT MODE MOSFET

Product Summary

Features

•

Dual N-Channel MOSFET

Low On-Resistance

Very low Gate Threshold Voltage, 1.0V max

Low Input Capacitance

Fast Switching Speed

Ultra-Small Surface Mount Package 1mm x 1mm

Low Package Profile, 0.45mm Maximum Package height

ESD Protected Gate

Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

Halogen and Antimony Free. “Green” Device (Note 3)

Qualified to AEC-Q101 standards for High Reliability

I

_Dmax

V_(BR)DSS

R_DS(ON)max

T_A= 25°C

450mA

400mA

330mA

300mA

0.99Ω @ V_GS= 4.5V

1.2Ω @ V_GS= 2.5V

1.8Ω @ V_GS= 1.8V

2.4Ω @ V_GS= 1.5V

20V

Description

This MOSFET has been designed to minimize the on-state resistance

(R_DS(on)) and yet maintain superior switching performance, making it

ideal for high efficiency power management applications.

Mechanical Data

•

Case: SOT963

Case Material: Molded Plastic, "Green" Molding Compound.

UL Flammability Classification Rating 94V-0

Applications

•

Moisture Sensitivity: Level 1 per J-STD-020

Terminal Connections Indicator: See diagram

Terminals: Finish ⎯ Matte Tin annealed over Copper leadframe.

Solderable per MIL-STD-202, Method 208

Weight: 0.027 grams (approximate)

•

General Purpose Interfacing Switch

Power Management Functions

DC-DC Converters

Analog Switch

•

D₁

G₂

S₂

SOT963

S₁

G₁

D₂

Top View

ESD PROTECTED

Schematic and Transistor Diagram

Ordering Information (Note 4)

Part Number

Case

Packaging

DMN2990UDJ-7

SOT963

10K/Tape & Reel

Notes:

1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com.

Marking Information

L1 = Product Type Marking Code

L1

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September 2012

DMN2990UDJ

Document number: DS35401 Rev. 7 - 2

DMN2990UDJ

Maximum Ratings (@T_A= +25°C, unless otherwise specified.)

Characteristic

Drain-Source Voltage

Symbol

V_DSS

Value

20

Units

V

Gate-Source Voltage

±8

V_GSS

T

_A= +25°C

_A= +70°C

_A= +25°C

Steady

State

450

350

mA

Continuous Drain Current (Note 5) V_GS= 4.5V

I_D

Steady

State

330

220

mA

Continuous Drain Current (Note 5) V_GS= 1.8V

Pulsed Drain Current (Note 6)

I_D

T_A= +70°C

800

I_DM

Thermal Characteristics (@T_A= +25°C, unless otherwise specified.)

Characteristic

Total Power Dissipation (Note 5)

Symbol

P_D

R_θ

Value

350

360

Units

mW

°C/W

°C

Thermal Resistance, Junction to Ambient

Operating and Storage Temperature Range

JA

-55 to +150

T_J,T_STG

Electrical Characteristics (@T_A= +25°C, unless otherwise specified.)

Characteristic

OFF CHARACTERISTICS (Note 7)

Drain-Source Breakdown Voltage

Symbol

Min

Typ

Max

Unit

Test Condition

20

-

V

BV_DSS

I_DSS

V_GS= 0V, I_D= 250μA

_DS= 5V, V_GS= 0V

50

V

nA

Zero Gate Voltage Drain Current @T_c= +25°C

-

100

±100

V_DS= 16V, V_GS= 0V

V_GS= ±5V, V_DS= 0V

Gate-Source Leakage

-

I_GSS

ON CHARACTERISTICS (Note 7)

Gate Threshold Voltage

0.4

-

1.0

0.99

1.2

1.8

2.4

-

V

V_GS(th)

V_DS= V_GS, I_D= 250μA

-

0.60

0.75

0.90

1.2

2.0

-

V

_GS= 4.5V, I_D= 100mA

_GS= 2.5V, I_D= 50mA

_GS= 1.8V, I_D= 20mA

_GS= 1.5V, I_D= 10mA

_GS= 1.2V, I_D= 1mA

-

Ω

Static Drain-Source On-Resistance

-

R_{DS (ON)}

-

180

-

Forward Transfer Admittance

Diode Forward Voltage (Note 6)

DYNAMIC CHARACTERISTICS (Note 8)

Input Capacitance

-

mS

V

|Y_fs|

V_SD

V_DS= 10V, I_D= 400mA

V_GS= 0V, I_S= 150mA

0.6

1.0

-

27.6

4.0

-

pF

nC

ns

C_iss

C_oss

C_rss

Q_g

V

_DS= 16V, V_GS= 0V,

Output Capacitance

f = 1.0MHz

Reverse Transfer Capacitance

Total Gate Charge

2.8

0.5

V

_GS= 4.5V, V_DS= 10V,

Gate-Source Charge

0.07

4.0

Q_gs

Q_gd

t_D(on)

t_r

I

_D= 250mA

Gate-Drain Charge

Turn-On Delay Time

V_DD= 10V, V_GS= 4.5V,

R_L= 47ꢀ, R_G= 10ꢀ,

Turn-On Rise Time

3.3

Turn-Off Delay Time

19.0

6.4

t_D(off)

t_f

I

_D= 200mA

Turn-Off Fall Time

Notes:

5. Device mounted on FR-4 PCB, with minimum recommended pad layout.

6. Device mounted on minimum recommended pad layout test board, 10μs pulse duty cycle = 1%.

7. Short duration pulse test used to minimize self-heating effect.

8. Guaranteed by design. Not subject to product testing.

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September 2012

DMN2990UDJ

Document number: DS35401 Rev. 7 - 2

DMN2990UDJ

0.8

0.6

0.8

0.6

0.4

0.2

0

V

= 4.5V

GS

V

= 5.0V

T

= -55°C

DS

A

V

= 4.0V

GS

T = 85°C

A

V

= 3.0V

T

= 25°C

GS

A

V

= 2.5V

GS

T

= 125°C

A

V

= 2.0V

GS

T

= 150°C

A

0.4

V

= 1.5V

GS

0.2

0

V

= 1.2V

GS

0

1

2

3

4

0

0.5

1.0

1.5

2.0

2.5

3.0

V_DS, DRAIN-SOURCE VOLTAGE (A)

V_GS, GATE-SOURCE VOLTAGE (V)

Fig. 1 Typical Output Characteristics

Fig. 2 Typical Transfer Characteristics

1.2

1.0

1.2

1.0

0.8

0.6

V

= 4.5V

GS

T

= 150°C

A

V

= 1.8V

GS

0.8

0.6

T

= 125°C

A

T

= 85°C

V

= 2.5V

= 4.5V

A

GS

T

= 25°C

A

V

GS

0.4

0.2

T

= -55°C

A

0.2

0

0.2

0.4

0.6

0.8

1.0

0

0.2

0.4

0.6

0.8

I_DDRAIN CURRENT (A)

I_D, DRAIN-SOURCE CURRENT

Fig. 3 Typical On-Resistance vs.

Drain Current and Gate Voltage

Fig. 4 Typical On-Resistance

vs. Drain Current and Temperature

1.2

1.6

1.4

1.0

0.8

V

I

= 2.5V

GS

= 150mA

D

1.2

1.0

0.6

0.4

0.2

0

V

I

= 4.5V,

V

I

= 4.5V

GS

= 300mA

D

0.8

0.6

V

= 2.5V,

GS

I

= 150mA

D

-50 -25

0

25

50

75 100 125 150

-50 -25

0

25 50 75 100 125 150

T_J, JUNCTION TEMPERATURE(

Fig. 6 On-Resistance Variation with Temperature

T_J, JUNCTION TEMPERATURE(

°C)

Fig. 5 On-Resistance Variation with Temperature

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September 2012

DMN2990UDJ

Document number: DS35401 Rev. 7 - 2

DMN2990UDJ

1.2

1.0

0.8

1.0

0.8

I

= 1mA

D

T = 25°C

0.6

0.4

A

I

= 250µA

D

0.6

0.4

0.2

0

0.2

0

-50 -25

0

25

50

75 100 125 150

C)

0

0.2

0.4

0.6

0.8

1.0

1.2

T_J, JUNCTION TEMPERATURE(

°

V_SD, SOURCE- DRAIN VOLTAGE (V)

Fig. 7 Gate Threshold Variation vs. Ambient Temperature

Fig. 8 Diodes Forward Voltage vs. Current

1,000

50

f = 1MHz

40

30

T

= 150°C

= 125°C

A

100

10

C

iss

T

A

20

10

= 85°C

= 25°C

A

T

A

C

oss

C

rss

0

1

0

5

10

15

20

2

4

6

8

10

12 14 16 18

20

V_DS, DRAIN-SOURCE VOLTAGE (V)

Fig. 9 Typical Junction Capacitance

Fig. 10 Typical Drain-Source Leakage Current vs. Voltage

1

8

6

R

DS(on)

Limited

DC

P

= 100µs

W

P

= 10s

P

W

0.1

= 1s

W

P

= 100ms

W

P

= 10µs

W

4

2

P

= 10ms

W

P

= 1ms

W

0.01

T

= 150°C

J(MAX)

V

I

= 10V

= 25°C

DS

A

= 250mA

Single Pulse

Limited

D

R

DS(ON)

0.001

0

0.2

0.4

0.6

0.8

1

0.1

1

10

100

Q_g, TOTAL GATE CHARGE (nC)

V_DS, DRAIN-SOURCE VOLTAGE

Fig. 11 Gate Charge

Fig. 12 SOA, Safe Operation Area

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DMN2990UDJ

Document number: DS35401 Rev. 7 - 2

DMN2990UDJ

1

D = 0.7

D = 0.5

D = 0.3

D = 0.9

0.1

D = 0.1

D = 0.05

D = 0.02

D = 0.01

D = 0.005

0.01

R

(t) = r(t)*R

= 356C/W

θ

JA

θJA

θ

Duty Cycle, D = t1/t2

Single Pulse

0.001

0.000001 0.00001

0.0001

0.001

0.01

0.1

1

10

100

1000

t1, PULSE DURATION TIME (sec)

Fig. 13 Transient Thermal Resisitance

Package Outline Dimensions

Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.

D

e1

SOT963

L

Dim Min

Max Typ

0.50 0.45

0.05

A

A1

c

0.40

0

-

E

E1

0.120 0.180 0.150

D

E

E1

L

b

0.95

0.75

0.05

0.10

1.05 1.00

0.85 0.80

0.15 0.10

0.20 0.15

e

c

b (6 places)

e

e1

0.35 Typ

0.70 Typ

All Dimensions in mm

A

A1

Suggested Pad Layout

Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.

C

Dimensions Value (in mm)

C

X

Y

0.350

0.200

1.100

Y1

Y (6X)

X (6X)

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September 2012

DMN2990UDJ

Document number: DS35401 Rev. 7 - 2

DMN2990UDJ

IMPORTANT NOTICE

DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,

INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE

(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).

Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes

without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the

application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or

trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume

all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated

website, harmless against all damages.

Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.

Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and

hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or

indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.

Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings

noted herein may also be covered by one or more United States, international or foreign trademarks.

LIFE SUPPORT

Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express

written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:

A. Life support devices or systems are devices or systems which:

1. are intended to implant into the body, or

2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the

labeling can be reasonably expected to result in significant injury to the user.

B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the

failure of the life support device or to affect its safety or effectiveness.

Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and

acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any

use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related

information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its

representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.

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September 2012

DMN2990UDJ

Document number: DS35401 Rev. 7 - 2


型号：	DMN2990UDJ
厂家：	DIODES INCORPORATED
描述：	DUAL N-CHANNEL ENHANCEMENT MODE MOSFET 双N沟道增强型MOSFET
文件：	总6页 (文件大小：181K)
中文：	中文翻译
下载：	下载PDF数据表文档文件

DMN2990UDJ [DIODES]

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