DMN25D0UFA-7B [DIODES]
Small Signal Field-Effect Transistor, 0.24A I(D), 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, X2-DFN0806-3, 2 PIN;
| 型号： | DMN25D0UFA-7B |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Small Signal Field-Effect Transistor, 0.24A I(D), 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, X2-DFN0806-3, 2 PIN 开关 晶体管 |
| 文件： | 总6页 (文件大小：277K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DMN25D0UFA
25V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary
Features
•
•
•
•
•
•
•
•
0.4mm ultra low profile package for thin application
0.48mm2 package footprint, 16 times smaller than SOT23
Low VGS(th), can be driven directly from a battery
Low RDS(on)
ID
V(BR)DSS
RDS(on)
TA = +25°C
0.32A
0.28A
4Ω @ VGS = 4.5V
5Ω @ VGS = 2.7V
25V
ESD Protected Gate (>6kV Human Body Mode)
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description
This MOSFET has been designed to minimize the on-state resistance
(RDS(ON)) and yet maintain superior switching performance, making it
ideal for high efficiency power management applications.
Mechanical Data
•
•
Case: X2-DFN0806-3
Applications
Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish – NiPdAu over Copper leadframe. Solderable
•
•
•
Load switch
•
•
Portable applications
Power Management Functions
e4
per MIL-STD-202, Method 208
•
Weight: 0.00043 grams (approximate)
Drain
X2-DFN0806-3
Body
Diode
Gate
Gate
ESD HBM >6kV
Protection
Diode
Source
Top View
Package Pin Configuration
Bottom View
Equivalent Circuit
Ordering Information (Note 4)
Part Number
Compliance
Case
Packaging
DMN25D0UFA-7B
Standard
X2-DFN0806-3
10,000/Tape & Reel
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"
and Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.
Marking Information
DMN25D0UFA-7B
56 = Product Type Marking Code
56
Top View
Bar Denotes Gate
and Source Side
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February 2014
© Diodes Incorporated
DMN25D0UFA
Document number: DS36253 Rev. 1 - 2
DMN25D0UFA
Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Drain-Source Voltage
Symbol
VDSS
Value
25
Unit
V
Gate-Source Voltage
8
VGSS
(Note 6)
0.32
0.25
0.24
1.2
A
ID
TA = +70°C (Note 6)
(Note 5)
Continuous Drain Current, VGS = 4.5V
Pulsed Drain Current
A
A
ID
(Note 7)
IDM
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
Value
0.63
Unit
(Note 6)
(Note 5)
(Note 6)
(Note 5)
Power Dissipation
W
PD
0.28
201
Thermal Resistance, Junction to Ambient
Operating and Storage Temperature Range
°C/W
°C
RθJA
338
-55 to +150
TJ, TSTG
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Symbol
Min
Typ
Max
Unit
Test Condition
—
—
—
25
—
—
—
1
V
BVDSS
IDSS
VGS = 0V, ID = 250μA
µA
nA
VDS = 20V, VGS = 0V
VGS = 8V, VDS = 0V
Gate-Source Leakage
100
IGSS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage
—
0.6
1.2
4
V
VGS(th)
RDS(on)
VDS = VGS, ID = 250μA
—
—
—
—
VGS = 4.5V, ID = 0.4A
Static Drain-Source On-Resistance
ꢀ
5
V
GS = 2.7V, ID = 0.2A
—
—
Forward Transfer Admittance
Diode Forward Voltage
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance
1
-
S
V
|Yfs|
VSD
VDS = 5V, ID = 0.4A
VGS = 0V, IS = 0.29A
0.76
1.2
—
—
—
—
—
—
—
—
—
—
—
27.9
6.1
—
—
—
—
—
—
—
—
—
—
—
pF
pF
pF
ꢀ
Ciss
Coss
Crss
Rg
VDS = 10V, VGS = 0V,
f = 1MHz
Output Capacitance
2
Reverse Transfer Capacitance
Gate Resistance
26.4
0.36
0.06
0.04
2.9
VDS = 0V, VGS = 0V, f = 1MHz
Total Gate Charge
nC
nC
nC
ns
ns
ns
ns
Qg
V
DS = 5V, VGS = 4.5V,
Gate-Source Charge
Gate-Drain Charge
Qgs
Qgd
tD(on)
tr
ID = 0.2A
Turn-On Delay Time
1.8
Turn-On Rise Time
VDS = 6V, VGS = 4.5V,
6.6
ID = 0.5A, RG = 50ꢀ
Turn-Off Delay Time
tD(off)
tf
2.3
Turn-Off Fall Time
Notes:
5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided.
6. Device mounted on 1” x 1” FR-4 PCB with high coverage 2oz. Copper, single sided.
7 .Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to production testing.
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February 2014
© Diodes Incorporated
DMN25D0UFA
Document number: DS36253 Rev. 1 - 2
DMN25D0UFA
0.5
0.4
0.3
0.2
0.1
0.0
0.5
V
V
= 8.0V
= 4.5V
GS
V
= 5.0V
DS
GS
GS
V
V
= 4.0V
= 3.5V
0.4
0.3
0.2
GS
V
V
= 3.0V
= 2.5V
GS
V
= 1.5V
GS
GS
V
= 2.0V
GS
T
= 150°C
A
T
= 85°C
A
T
= 125°C
0.1
0
A
V
= 1.2V
GS
T
= 25°C
A
T
= -55°C
A
0
0.5
1
1.5
2
2.5
3
0
0.5
1
1.5
2
2.5
3
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 1 Typical Output Characteristics
VGS, GATE-SOURCE VOLTAGE (V)
Figure 2 Typical Transfer Characteristics
1
0.9
0.8
0.7
0.6
0.5
2
1.8
1.6
1.4
1.2
1
V
= 2.7V
GS
V
= 4.5V
GS
I
= 200mA
D
I
= 400mA
D
0.8
0.6
0
0.1
0.2
0.3
0.4
0.5
0
1
2
3
4
5
6
7
8
VGS, GATE-SOURCE VOLTAGE (V)
ID, DRAIN-SOURCE CURRENT (A)
Figure 4 Typical Transfer Characteristics
Figure 3 Typical On-Resistance vs.
Drain Current and Gate Voltage
2
2
V
= 4.5V
GS
1.8
V
I
= 4.5V
GS
1.6
1.4
1.2
= 500mA
D
1.6
1.2
T
= 150°C
= 85°C
A
T
= 125°C
A
V
= 2.7V
GS
T
A
I
= 100mA
D
1
T
= 25°C
0.8
A
T
= -55°C
0.6
0.4
0.2
A
0.8
0.4
0
0
0.1
0.2
0.3
0.4
0.5
-50 -25
TJ, JUNCTION TEMPERATURE (
Figure 6 On-Resistance Variation with Temperature
0
25
50
75 100 125 150
ID, DRAIN CURRENT (A)
°C)
Figure 5 Typical On-Resistance vs.
Drain Current and Temperature
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© Diodes Incorporated
DMN25D0UFA
Document number: DS36253 Rev. 1 - 2
DMN25D0UFA
2
1.8
1.6
1.4
1.2
1
1.2
1
V
= 2.7V
GS
I
= 1mA
D
I
= 100mA
D
I
= 250µA
D
0.8
0.6
0.4
0.8
0.6
0.4
0.2
0
V
= 4.5V
GS
I
= 500mA
D
-50 -25
TJ, JUNCTION TEMPERATURE (
Figure 7 On-Resistance Variation with Temperature
0
25
50
75 100 125 150
-50 -25
0
25
50
75 100 125 150
C)
TJ, JUNCTION TEMPERATURE (
°
°
C)
Figure 8 Gate Threshold Variation vs. Ambient Temperature
0.5
0.4
0.3
0.2
0.1
0
100
f = 1MHz
C
iss
T
= 150°C
A
T
= 25°C
A
10
T
= 125°C
A
C
oss
T
= -55°C
A
T
= 85°C
A
C
rss
1
0
5
10
15
20
25
0
0.3
0.6
0.9
1.2
1.5
VSD, SOURCE-DRAIN VOLTAGE (V)
Figure 9 Diode Forward Voltage vs. Current
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 10 Typical Junction Capacitance
8
7
6
5
4
3
2
1
0
10
R
DS(ON)
Limited
1
DC
= 10s
P
V
I
= 5V
W
DS
0.1
0.01
= 200mA
D
P
= 1s
W
P
= 100ms
W
P
= 10ms
W
P
= 1ms
W
P
= 100µs
W
T
T
= 150°C
J(max)
= 25°C
A
V
= 4.5V
GS
Single Pulse
DUT on 1 * MRP Board
0.001
0.1
1
10
100
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
VDS, DRAIN-SOURCE VOLTAGE (V)
Figure 12 SOA, Safe Operation Area
Qg, TOTAL GATE CHARGE (nC)
Figure 11 Gate Charge
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© Diodes Incorporated
DMN25D0UFA
Document number: DS36253 Rev. 1 - 2
DMN25D0UFA
1
D = 0.9
D = 0.7
D = 0.5
D = 0.3
0.1
D = 0.1
D = 0.05
D = 0.02
D = 0.01
D = 0.005
0.01
RθJA(t) = r(t) * Rθ
RθJA = 334°C/W
Duty Cycle, D = t1/ t2
JA
D = Single Pulse
0.001
0.000001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
t1, PULSE DURATION TIME (sec)
Figure 13 Transient Thermal Resistance
Package Outline Dimensions
Please see AP02002 at http://www.diodes.com/datasheets/ap02002.pdf for latest version.
A3
A1
A
X2-DFN0806-3
Seating Plane
Dim Min
Max Typ
A
A1
A3
b
D
D1
E
E1
e
K
0.375 0.40 0.39
0
-
0.05 0.02
0.10
-
D
e
0.10 0.20 0.15
0.55 0.65 0.60
0.35 0.45 0.40
0.75 0.85 0.80
0.20 0.30 0.25
L (2x)
-
-
-
-
0.35
0.20
b (2x)
K
E
L
0.20 0.30 0.25
E1
All Dimensions in mm
Pin#1
R0.075
D1
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February 2014
© Diodes Incorporated
DMN25D0UFA
Document number: DS36253 Rev. 1 - 2
DMN25D0UFA
Suggested Pad Layout
Please see AP02001 at http://www.diodes.com/datasheets/ap02001.pdf for the latest version.
X1
Value
(in mm)
0.350
0.200
0.450
0.550
0.375
0.475
1.000
Dimensions
Y1
C
X
X1
X2
Y
Y2
X (2x)
Y1
Y2
Y (2x)
C
X2
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INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
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Copyright © 2014, Diodes Incorporated
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February 2014
© Diodes Incorporated
DMN25D0UFA
Document number: DS36253 Rev. 1 - 2
相关型号：
DMN2600UFB-7B
Small Signal Field-Effect Transistor, 1.3A I(D), 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, ULTRA SMALL, PLASTIC, DFN1006-3, 3 PIN
DIODES
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