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DMMT5401_2 [DIODES]

MATCHED PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR; MATCHED PNP小信号表面贴装晶体管
DMMT5401_2
型号： DMMT5401_2
厂家： DIODES INCORPORATED    DIODES INCORPORATED
描述：

MATCHED PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
MATCHED PNP小信号表面贴装晶体管

晶体 晶体管
文件： 总4页 (文件大小：111K)
中文：  中文翻译
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DMMT5401  
MATCHED PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR  
Features  
A
•
•
•
•
•
•
•
Epitaxial Planar Die Construction  
SOT-26  
Complementary NPN Type Available (DMMT5551)  
Ideal for Low Power Amplification and Switching  
Intrinsically Matched PNP Pair (Note 1)  
2% Matched Tolerance, hFE, VCE(SAT), VBE(SAT)  
Lead Free/RoHS Compliant (Note 4)  
C2  
E2  
E1  
Dim Min Max Typ  
A
B
C
D
F
0.35 0.50 0.38  
1.50 1.70 1.60  
2.70 3.00 2.80  
C
B
B2  
C1  
B1  
"Green" Device (Note 5 and 6)  
0.95  
0.55  
⎯
⎯
⎯
⎯
Mechanical Data  
•
•
H
H
J
2.90 3.10 3.00  
0.013 0.10 0.05  
1.00 1.30 1.10  
0.35 0.55 0.40  
0.10 0.20 0.15  
Case: SOT-26  
K
J
M
Case Material: Molded Plastic, "Green" Molding  
Compound, Note 6. UL Flammability Classification  
Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminal Connections: See Diagram  
Terminals: Solderable per MIL-STD-202, Method 208  
Lead Free Plating (Matte Tin Finish annealed over  
Copper leadframe).  
K
L
F
L
D
•
•
•
•
M
α
E
1
E
2
C
2
0°  
8°  
⎯
All Dimensions in mm  
•
•
•
Marking Information: K4S, See Page 3  
Ordering & Date Code Information: See Page 3  
Weight: 0.006 grams (approximate)  
C
1
B
1
B
2
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Collector-Base Voltage  
Collector-Emitter Voltage  
Emitter-Base Voltage  
Collector Current - Continuous (Note 2)  
Power Dissipation (Note 2, 3)  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Value  
-160  
-150  
-5.0  
-200  
300  
Unit  
V
V
V
mA  
mW  
°C/W  
Pd  
Thermal Resistance, Junction to Ambient (Note 2)  
417  
Rθ  
JA  
Operating and Storage Temperature Range  
-55 to +150  
Tj, TSTG  
°C  
Notes:  
1.  
2.  
Built with adjacent die from a single wafer.  
Device mounted on FR5 PCB: 1.0 x 0.75 x 0.62 in.; pad layout as shown on suggested pad layout document AP02001, which can be found on our  
website at http://www.diodes.com/datasheets/ap02001.pdf.  
3.  
4.  
5.  
6.  
Maximum combined dissipation.  
No purposefully added lead.  
Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to Date  
Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.  
DS30437 Rev. 6 - 2  
1 of 4  
DMMT5401  
© Diodes Incorporated  
www.diodes.com  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
OFF CHARACTERISTICS (Note 7)  
Collector-Base Breakdown Voltage  
Collector-Emitter Breakdown Voltage  
Emitter-Base Breakdown Voltage  
Symbol  
Min  
Max  
Unit  
Test Condition  
IC = -100μA, IE = 0  
IC = -1.0mA, IB = 0  
IE = -10μA, IC = 0  
-160  
-150  
-5.0  
V
V
V
V(BR)CBO  
V(BR)CEO  
V(BR)EBO  
⎯
⎯
⎯
nA  
μA  
nA  
VCB = -120V, IE = 0  
VCB = -120V, IE = 0, TA = 100°C  
VEB = -3.0V, IC = 0  
Collector Cutoff Current  
-50  
-50  
ICBO  
IEBO  
⎯
⎯
Emitter Cutoff Current  
ON CHARACTERISTICS (Note 7)  
IC = -1.0mA, VCE = -5.0V  
50  
60  
50  
⎯
240  
⎯
DC Current Gain (Note 8)  
hFE  
⎯
IC  
IC  
=
=
-10mA, VCE = -5.0V  
-50mA, VCE = -5.0V  
IC = -10mA, IB = -1.0mA  
IC = -50mA, IB = -5.0mA  
IC = -10mA, IB = -1.0mA  
IC = -50mA, IB = -5.0mA  
-0.2  
-0.5  
Collector-Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
V
V
VCE(SAT)  
VBE(SAT)  
⎯
⎯
-1.0  
SMALL SIGNAL CHARACTERISTICS  
Output Capacitance  
6.0  
pF  
Cobo  
hfe  
⎯
VCB = -10V, f = 1.0MHz, IE = 0  
VCE = -10V, IC = -1.0mA,  
f = 1.0kHz  
VCE = -10V, IC = -10mA,  
f = 100MHz  
VCE = -5.0V, IC = -200μA,  
RS = 10Ω, f = 1.0kHz  
Small Signal Current Gain  
Current Gain-Bandwidth Product  
Noise Figure  
40  
200  
⎯
100  
300  
8.0  
MHz  
dB  
fT  
NF  
⎯
Notes:  
7. Short duration pulse test used to minimize self-heating effect.  
8. The DC Current Gain, hFE, (matched at IC = -10mA and VCE = -5V) Collector Emitter Saturation Voltage, VCE(SAT), and Base Emitter Saturation Voltage,  
BE(SAT) are matched with typical matched tolerances of 1% and maximum of 2%.  
V
400  
350  
10.0  
I
C
= 10  
I
B
300  
250  
1.0  
T
= 150°C  
A
200  
150  
0.1  
100  
T
= -50°C  
A
50  
0
T
= 25°C  
A
0.01  
200  
0
175  
25  
50  
150  
100 125  
75  
10  
100  
1
1,000  
TA, AMBIENT TEMPERATURE (°C)  
IC, COLLECTOR CURRENT (mA)  
Fig. 1, Max Power Dissipation vs.  
Ambient Temperature  
Fig. 2, Collector Emitter Saturation Voltage  
vs. Collector Current  
DS30437 Rev. 6 - 2  
2 of 4  
www.diodes.com  
DMMT5401  
© Diodes Incorporated  
1.0  
0.9  
0.8  
10,000  
1,000  
V
= 5V  
CE  
V
= 5V  
CE  
T
= -50°C  
A
0.7  
0.6  
T
= 150°C  
A
T
= 25°C  
A
100  
0.5  
0.4  
0.3  
T = 150°C  
A
T
= 25°C  
A
T
= -50°C  
A
10  
1
0.2  
0.1  
0.1  
1.0  
10  
100  
10  
100  
1
1,000  
IC, COLLECTOR CURRENT (mA)  
Fig. 4, Base Emitter Voltage vs. Collector Current  
IC, COLLECTOR CURRENT (mA)  
Fig. 3, DC Current Gain vs. Collector Current  
1,000  
100  
V
= 10V  
CE  
10  
1
10  
IC, COLLECTOR CURRENT (mA)  
Fig. 5, Gain Bandwidth Product vs. Collector Current  
1
100  
Ordering Information (Note 6 & 9 )  
Device  
Packaging  
Shipping  
DMMT5401-7-F  
SOT-26  
3000/Tape & Reel  
Notes:  
9. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.  
Marking Information  
K4S = Product Type Marking Code  
YM = Date Code Marking  
Y = Year ex: T = 2006  
K4S  
M = Month ex: 9 = September  
Date Code Key  
Year  
2004  
2005  
2006  
2007  
2008  
2009  
2010  
2011  
2012  
Code  
R
S
T
U
V
W
X
Y
Z
Month  
Code  
Jan  
Feb  
Mar  
Apr  
May  
Jun  
Jul  
Aug  
Sep  
Oct  
Nov  
Dec  
1
2
3
4
5
6
7
8
9
O
N
D
DS30437 Rev. 6 - 2  
3 of 4  
www.diodes.com  
DMMT5401  
© Diodes Incorporated  
IMPORTANT NOTICE  
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes  
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product  
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall  
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,  
harmless against all damages.  
LIFE SUPPORT  
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written  
approval of the President of Diodes Incorporated.  
DS30437 Rev. 6 - 2  
4 of 4  
DMMT5401  
© Diodes Incorporated  
www.diodes.com  

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