首页 |元器件品牌

BSS123W_0711 [DIODES]

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR; N沟道增强型网络场效晶体管
BSS123W_0711
型号： BSS123W_0711
厂家： DIODES INCORPORATED    DIODES INCORPORATED
描述：

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
N沟道增强型网络场效晶体管

晶体 晶体管
文件： 总4页 (文件大小：147K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
 查看货源
BSS123W  
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR  
Features  
Mechanical Data  
•
•
•
•
•
•
•
•
Low Gate Threshold Voltage  
Low Input Capacitance  
Fast Switching Speed  
Low Input/Output Leakage  
High Drain-Source Voltage Rating  
Lead Free/RoHS Compliant (Note 2)  
Qualified to AEC-Q101 Standards for High Reliability  
"Green" Device, Note 3 and 4  
•
•
Case: SOT-323  
Case Material: Molded Plastic, "Green" Molding Compound,  
Note 4. UL Flammability Classification Rating 94V-0  
Moisture Sensitivity: Level 1 per J-STD-020C  
Terminal Connections: See Diagram  
Terminals: Solderable per MIL-STD-202, Method 208  
Lead Free Plating (Matte Tin Finish annealed over Alloy 42  
leadframe).  
•
•
•
•
•
•
•
Marking Information: See Page 3  
Ordering Information: See Page 3  
Weight: 0.006 grams (approximate)  
Drain  
SOT-323  
D
Gate  
G
S
TOP VIEW  
Source  
TOP VIEW  
Equivalent Circuit  
Maximum Ratings @TA = 25°C unless otherwise specified  
Characteristic  
Drain-Source Voltage  
Symbol  
VDSS  
VDGR  
VGSS  
ID  
Value  
100  
Units  
V
V
V
100  
Drain-Gate Voltage RGS ≤ 20KΩ  
Gate-Source Voltage  
Continuous  
±20  
170  
680  
Drain Current (Note 1)  
Continuous  
Pulsed  
mA  
IDM  
Thermal Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
Total Power Dissipation (Note 1)  
Symbol  
Pd  
Rθ  
Value  
200  
Units  
mW  
Thermal Resistance, Junction to Ambient (Note 1)  
Operating and Storage Temperature Range  
625  
°C/W  
°C  
JA  
-55 to +150  
Tj, TSTG  
Notes:  
1. Part mounted on FR-4 board with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.  
2. No purposefully added lead.  
3. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.  
4. Product manufactured with Date Code 0627 (week 27, 2006) and newer are built with Green Molding Compound. Product manufactured prior to  
Date Code 0627 are built with Non-Green Molding Compound and may contain Halogens or Sb2O3 Fire Retardants.  
1 of 4  
www.diodes.com  
November 2007  
© Diodes Incorporated  
BSS123W  
Document number: DS30368 Rev. 8 - 2  
BSS123W  
Electrical Characteristics @TA = 25°C unless otherwise specified  
Characteristic  
OFF CHARACTERISTICS (Note 5)  
Drain-Source Breakdown Voltage  
Symbol Min Typ Max Unit  
Test Condition  
VGS = 0V, ID = 250μA  
VDS = 100V, VGS = 0V  
VDS = 20V, VGS = 0V  
VGS = 20V, VDS = 0V  
100  
⎯
V
BVDSS  
IDSS  
⎯
⎯
⎯
⎯
1.0  
10  
µA  
nA  
Zero Gate Voltage Drain Current  
Gate-Body Leakage, Forward  
ON CHARACTERISTICS (Note 5)  
Gate Threshold Voltage  
50  
nA  
IGSSF  
⎯
0.8  
1.4  
2.0  
V
VGS(th)  
VDS = VGS, ID = 1mA  
VGS = 10V, ID = 0.17A  
VGS = 4.5V, ID = 0.17A  
VDS = 10V, ID = 0.17A, f = 1.0KHz  
VGS = 0V, IS = 0.34A  
⎯
⎯
80  
⎯
⎯
370  
6.0  
10  
Static Drain-Source On-Resistance  
RDS (ON)  
Ω
Forward Transconductance  
Drain-Source Diode Forward Voltage  
DYNAMIC CHARACTERISTICS  
Input Capacitance  
mS  
V
gFS  
VSD  
⎯
0.84 1.3  
⎯
29  
10  
2
60  
15  
6
pF  
Ciss  
Coss  
Crss  
⎯
⎯
⎯
Output Capacitance  
pF VDS = 25V, VGS = 0V, f = 1.0MHz  
pF  
Reverse Transfer Capacitance  
SWITCHING CHARACTERISTICS  
Turn-On Rise Time  
Turn-Off Fall Time  
Turn-On Delay Time  
8
16  
8
ns  
ns  
tr  
tf  
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
VDD = 30V, ID = 0.28A,  
ns RGEN = 50Ω, VGS = 10V  
ns  
tD(ON)  
tD(OFF)  
Turn-Off Delay Time  
13  
5. Short duration pulse test used to minimize self-heating effect.  
0.7  
0.6  
2.4  
2.0  
0.5  
0.4  
0.3  
0.2  
1.6  
1.2  
0.8  
0.1  
0
0.1  
0.2  
0.3  
0.4  
0.5  
0.6  
1
2
4
0
3
5
VDS, DRAIN-SOURCE VOLTAGE (V)  
ID, DRAIN-SOURCE CURRENT (A)  
Fig. 1 On-Region Characteristics  
Fig. 2 On-Resistance Variation with Gate Voltage  
and Drain-Source Current  
2 of 4  
www.diodes.com  
November 2007  
© Diodes Incorporated  
BSS123W  
Document number: DS30368 Rev. 8 - 2  
BSS123W  
1.2  
1.1  
2.2  
2
V
I
= V  
GS  
= 250μA  
DS  
D
1.8  
1.6  
1.4  
1
1.2  
1
0.9  
0.8  
0.8  
0.7  
0.6  
0.4  
50  
-25  
TJ, JUNCTION TEMPERATURE (ºC)  
Fig. 4 On-Resistance Variation with Temperature  
0
25  
50  
-50 -25  
0
25  
75 100 125 150  
-50  
75 100 125 150  
TJ, JUNCTION TEMPERATURE (ºC)  
Fig. 3 Gate Threshold Variation with Temperature  
50  
40  
30  
250  
200  
150  
100  
20  
50  
0
10  
0
200  
0
100  
5
10  
20  
0
15  
25  
TA, AMBIENT TEMPERATURE (°C)  
VDS, DRAIN-SOURCE VOLTAGE (V)  
Fig. 6 Power Derating Curve, Total Package  
Fig. 5 Typical Capacitance  
Ordering Information (Notes 4 & 6)  
Part Number  
Case  
Packaging  
BSS123W-7-F  
SOT-323  
3000/Tape & Reel  
Notes:  
6. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.  
Marking Information  
K23 = Product Type Marking Code  
YM = Date Code Marking  
Y = Year ex: N = 2002  
K23  
M = Month ex: 9 = September  
Date Code Key  
Year  
2002  
2003  
2004  
2005  
2006  
2007  
2008  
2009  
2010  
2011  
2012  
Code  
N
P
R
S
T
U
V
W
X
Y
Z
Month  
Code  
Jan  
Feb  
Mar  
Apr  
May  
Jun  
Jul  
Aug  
Sep  
Oct  
Nov  
Dec  
1
2
3
4
5
6
7
8
9
O
N
D
3 of 4  
www.diodes.com  
November 2007  
© Diodes Incorporated  
BSS123W  
Document number: DS30368 Rev. 8 - 2  
BSS123W  
Package Outline Dimensions  
A
SOT-323  
Min  
0.25  
1.15  
2.00  
Dim  
A
B
C
D
E
G
H
J
Max  
0.25  
1.35  
2.00  
C
B
TOP VIEW  
0.65 Nominal  
0.30  
1.20  
1.80  
0.0  
0.90  
0.25  
0.10  
0°  
0.40  
1.40  
2.20  
0.10  
1.00  
0.40  
0.18  
8°  
G
H
K
J
M
K
L
M
L
E
D
α
All Dimensions in mm  
Suggested Pad Layout  
Dimensions Value (in mm)  
Y
Z
G
X
Y
C
E
2.8  
1.0  
0.7  
0.9  
1.9  
0.65  
Z
G
C
X
E
IMPORTANT NOTICE  
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes  
without further notice to any product herein. Diodes Incorporated does not assume any liability arising out of the application or use of any product  
described herein; neither does it convey any license under its patent rights, nor the rights of others. The user of products in such applications shall  
assume all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on our website,  
harmless against all damages.  
LIFE SUPPORT  
Diodes Incorporated products are not authorized for use as critical components in life support devices or systems without the expressed written  
approval of the President of Diodes Incorporated.  
4 of 4  
www.diodes.com  
November 2007  
© Diodes Incorporated  
BSS123W  
Document number: DS30368 Rev. 8 - 2  

相关型号：

BSS123W_1

 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DIODES

BSS123_08

 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DIODES

BSS123_1

 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR
DIODES

BSS123_10

 SIPMOS Small-Signal-Transistor
INFINEON

BSS123_FAIRCHILD
FAIRCHILD

BSS124

 SIPMOS Small-Signal Transistor (N channel Enhancement mode)
INFINEON

BSS124E6288

 Small Signal Field-Effect Transistor, 0.12A I(D), 400V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, TO-92, 3 PIN
INFINEON

BSS125

 SIPMOS Small-Signal Transistor (N channel Enhancement mode)
INFINEON

BSS125E6288

 Small Signal Field-Effect Transistor, 0.1A I(D), 600V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, TO-92, 3 PIN
INFINEON

BSS125Q62702-S21

 TRANSISTOR MOSFET TO 92 E LINE TO 237
INFINEON

BSS126

 SIPMOS㈢ Small-Signal-Transistor
INFINEON

BSS126E6327

 Small Signal Field-Effect Transistor, 0.021A I(D), 600V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-3
INFINEON
©2020 ICPDF网 联系我们和版权申明