BSS126 [INFINEON]
SIPMOS㈢ Small-Signal-Transistor; SIPMOS®小信号三极管
| 型号： | BSS126 |
| 厂家： | 
Infineon |
| 描述： | SIPMOS㈢ Small-Signal-Transistor |
| 文件： | 总9页 (文件大小：237K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BSS126
SIPMOS® Small-Signal-Transistor
Product Summary
V DS
Features
600
700
V
• N-channel
• Depletion mode
R DS(on),max
I DSS,min
Ω
0.007 A
• dv /dt rated
• Available with VGS(th) indicator on reel
• Pb-free lead plating; RoHS compliant
PG-SOT-23
Type
Package
Ordering Code Tape and Reel Information
Marking
SHs
BSS1260)
BSS1260)
PG-SOT-23 Q67042-S4300
PG-SOT-23 Q67042-S4300
E6327: 3000 pcs/reel
E6906: 3000 pcs/reel
SHs
sorted in V GS(th) bands1)
Maximum ratings, at T j=25 °C, unless otherwise specified
Value
Parameter
Symbol Conditions
Unit
I D
T A=25 °C
T A=70 °C
Continuous drain current
0.021
0.017
0.085
A
I D,pulse
dv /dt
V GS
T A=25 °C
Pulsed drain current
Reverse diode dv /dt
Gate source voltage
I D=0.016 A,
V
DS=20 V,
6
kV/µs
V
di /dt =200 A/µs,
T
j,max=150 °C
±20
ESD sensitivity (HBM) as per
MIL-STD 883
Class 1
P tot
T A=25 °C
Power dissipation
0.50
W
T j, T stg
Operating and storage temperature
-55 ... 150
55/150/56
°C
IEC climatic category; DIN IEC 68-1
0) also available in non Pb-free on request
1) see table on next page and diagram 11
Rev. 1.3
page 1
2006-06-14
BSS126
Unit
Values
typ.
Parameter
Symbol Conditions
min.
max.
Thermal characteristics
Thermal resistance,
junction - ambient
R thJA
minimal footprint
-
-
250 K/W
Electrical characteristics, at T j=25 °C, unless otherwise specified
Static characteristics
V (BR)DSS
V GS(th)
V
V
GS=-5 V, I D=250 µA
DS=3 V, I D=8 µA
Drain-source breakdown voltage
Gate threshold voltage
600
-2.7
-
-
V
-2.0
-1.6
V
V
DS=600 V,
I D(off)
Drain-source cutoff current
-
-
-
-
0.1
10
µA
GS=-5 V, T j=25 °C
V
V
DS=600 V,
GS=-5 V, T j=125 °C
I GSS
V
V
V
V
GS=20 V, V DS=0 V
GS=0 V, V DS=25 V
GS=0 V, I D=3 mA
GS=10 V, I D=16 mA
Gate-source leakage current
On-state drain current
-
7
-
-
100 nA
I DSS
-
-
mA
R DS(on)
Drain-source on-state resistance
320
280
700
500
Ω
-
|V DS|>2|I D|R DS(on)max
I D=0.01 A
,
g fs
Transconductance
0.008
0.017
-
S
V
Threshold voltage V GS(th) sorted in bands2)
V GS(th)
V DS=3 V, I D=8 µA
J
-1.8
-1.95
-2.1
-
-
-
-
-
-1.6
-1.75
-1.9
K
L
M
N
-2.25
-2.4
-2.05
-2.2
2) Each reel contains transistors out of one band whose identifying letter is printed on the reel label. A specific
band cannot be ordered separately.
Rev. 1.3
page 2
2006-06-14
BSS126
Unit
Values
typ.
Parameter
Symbol Conditions
min.
max.
Dynamic characteristics
I D=f(V GS); V DS=3 V; T j=25 °C
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
C iss
-
-
-
-
-
-
-
21
2.4
1.0
6.1
9.7
14
28
3.2
1.5
9.2
14.5
21
pF
ns
V
GS=-5 V, V DS=25 V,
C oss
Crss
t d(on)
t r
f =1 MHz
V
V
DD=300 V,
GS=-3…7 V,
t d(off)
t f
Turn-off delay time
Fall time
I D=0.01 A, R G=6 Ω
115
170
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Q gs
-
-
-
-
0.05
1.2
0.08 nC
1.8
V
DD=400 V,
I D=10 mA,
GS=-3 to 5 V
Q gd
Q g
1.4
2.1
V
V plateau
Gate plateau voltage
0.10
-
V
A
Reverse Diode
I S
Diode continous forward current
Diode pulse current
-
-
-
-
0.016
0.064
T A=25 °C
I S,pulse
V
GS=-5 V, I F=16 mA,
V SD
Diode forward voltage
-
0.81
1.2
V
T j=25 °C
t rr
Reverse recovery time
-
-
160
240 ns
19.8 nC
V R=300 V, I F=0.01 A,
di F/dt =100 A/µs
Q rr
Reverse recovery charge
13.2
Rev. 1.3
page 3
2006-06-14
BSS126
1 Power dissipation
2 Drain current
P tot=f(T A)
I D=f(T A); V GS≥10 V
0.6
0.5
0.4
0.3
0.2
0.1
0
0.025
0.02
0.015
0.01
0.005
0
0
40
80
120
160
0
40
80
120
160
T
A [°C]
T
A [°C]
3 Safe operating area
4 Max. transient thermal impedance
thJA=f(t p)
I D=f(V GS); V DS=3 V; T j=25 °C
parameter: t p
Z
parameter: D =t p/T
10-1
103
10 µs
limited by on-state
resistance
100 µs
10-2
10-3
10-4
1 ms
10 ms
DC
0.5
102
0.2
0.1
0.05
single pulse
0.02
0.01
101
100
101
102
103
10-4
10-3
10-2
10-1
100
101
102
V
DS [V]
t p [s]
Rev. 1.3
page 4
2006-06-14
BSS126
5 Typ. output characteristics
I D=f(V DS); T j=25 °C
6 Typ. drain-source on resistance
DS(on)=f(I D); T j=25 °C
R
parameter: V GS
parameter: V GS
0.04
0.03
0.02
0.01
0
1000
900
800
700
600
500
400
300
200
100
0.2 V
0.1 V
-0.2 V
-0.1 V
0 V
0.5 V
V 10
V 1
V 0.5
V 0.2
V 0.1
V 0
V 0.1-
V 0.2-
1 V
10 V
0
0
0
4
8
12
16
0.01
0.02
0.03
0.04
V
DS [V]
I
D [A]
7 Typ. transfer characteristics
8 Typ. forward transconductance
I D=f(V GS); V DS=3 V; T j=25 °C
g fs=f(I D); T j=25 °C
0.025
0.02
0.015
0.01
0.005
0
0.025
0.02
0.015
0.01
0.005
0
-2
-1
0
1
0.000
0.005
0.010
D [A]
0.015
0.020
V
GS [V]
I
Rev. 1.3
page 5
2006-06-14
BSS126
9 Drain-source on-state resistance
10 Typ. gate threshold voltage
GS(th)=f(T j); V DS=3 V; I D = 8 µA
R
DS(on)=f(T j); I D= 0.016mA; V GS=0 V
V
parameter: I D
1600
1400
1200
1000
-1
-1.5
-2
%98
typ
%98
800
-2.5
-3
600
%2
400
typ
200
0
-3.5
-60
-60
-20
20
60
100
140
180
-20
20
60
T j [°C]
100
140
180
T j [°C]
11 Threshold voltage bands
12 Typ. capacitances
I D=f(V GS); V DS=3 V; T j=25 °C
C =f(V DS); V GS=-3 V; f =1 MHz
0.1
100
Ciss
10
1
0.01
8 µA
Coss
Crss
N
M
L
K
J
0.001
0.1
-2.5
-2
-1.5
-1
0
5
10
15
20
25
30
V
GS [V]
V
DS [V]
Rev. 1.3
page 6
2006-06-14
BSS126
13 Forward characteristics of reverse diode
I F=f(V SD
15 Typ. gate charge
GS=f(Q gate); I D=0.1 A pulsed
)
V
parameter: T j
parameter: V DD
6
5
0.1
0.5 VDS(max)
0.2 VDS(max)
150 °C
25 °C
4
150 °C, 98%
0.8 VDS(max)
3
25 °C, 98%
2
1
0.01
0
-1
-2
-3
-4
0
0.001
0
0.4
0.8
1.2
1.6
0.5
1
1.5
2
2.5
V
SD [V]
Q gate [nC]
16 Drain-source breakdown voltage
I D=f(V GS); V DS=3 V; T j=25 °C
700
660
620
580
540
500
-60
-20
20
60
100
140
180
T j [°C]
Rev. 1.3
page 7
2006-06-14
BSS126
Package Outline:
Footprint:
Packaging:
Dimensions in mm
Rev. 1.3
page 8
2006-06-14
BSS126
Published by
Infineon Technologies AG
Bereich Kommunikation
St.-Martin-Straße 53
D-81451 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as
warranted characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices, please contact your
nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide
(see address list).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact your nearest Infineon Technologies office.
Infineon Technologies' components may only be used in life-support devices or systems with the
expressed written approval of Infineon Technologies if a failure of such components can reasonably
be expected to cause the failure of that life-support device or system, or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.3
page 9
2006-06-14
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