74LVC1G125FW4-7 [DIODES]

SINGLE BUFFER GATE WITH 3-STATE OUTPUT; 具有三态输出单缓冲门
74LVC1G125FW4-7
型号: 74LVC1G125FW4-7
厂家: DIODES INCORPORATED    DIODES INCORPORATED
描述:

SINGLE BUFFER GATE WITH 3-STATE OUTPUT
具有三态输出单缓冲门

输出元件
文件: 总12页 (文件大小:180K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
74LVC1G125  
SINGLE BUFFER GATE WITH 3-STATE OUTPUT  
Description  
Pin Assignments  
(Top View)  
( Top View )  
The 74LVC1G125 is a single non-inverting buffer/bus driver  
with a 3-state output. The output enters a high impedance  
state when a HIGH-level is applied to the output enable (OE)  
pin. The device is designed for operation with a power supply  
range of 1.65V to 5.5V. The inputs are tolerant to 5.5V  
1
2
3
5
OE  
VCC  
VCC  
OE  
A
A
GND  
Y
4
GND  
Y
allowing this device to be used in  
a mixed voltage  
SOT553  
SOT25 / SOT353  
(Top View)  
Top View  
environment. The device is fully specified for partial power  
down applications using IOFF. The IOFF circuitry disables the  
output preventing damaging current backflow when the device  
is powered down.  
(Top View)  
VCC  
1
2
3
6
5
4
OE  
A
VCC  
NC  
Y
1
2
3
6
5
4
OE  
A
NC  
Y
GND  
Features  
GND  
X2-DFN1010-6  
Wide Supply Voltage Range from 1.65 to 5.5V  
± 24mA Output Drive at 3.3V  
X2-DFN1410-6  
CMOS low power consumption  
IOFF Supports Partial-Power-Down Mode Operation  
Inputs accept up to 5.5V  
Applications  
ESD Protection Tested per JESD 22  
Voltage Level Shifting  
Bus Driver / Repeater  
o
Exceeds 200-V Machine Model (A115-A)  
o
o
Exceeds 2000-V Human Body Model (A114-A)  
Exceeds 1000-V Charged Device Model (C101C)  
Power Down Signal Isolation  
General Purpose Logic  
Latch-Up Exceeds 100mA per JESD 78, Class II Latch-  
Up Exceeds 100mA per JESD 78, Class II  
Range of Package Options  
Wide array of products such as:  
o
o
o
o
o
o
PCs, networking, notebooks, netbooks, PDAs  
Tablet Computers, E-readers  
Direct Interface with TTL Levels  
Computer peripherals, hard drives, CD/DVD ROM  
TV, DVD, DVR, set top box  
All packages Assembled with “Green” Molding  
Compound (no Br, Sb)  
Cell Phones, Personal Navigation / GPS  
MP3 players ,Cameras, Video Recorders  
Lead Free Finish/ RoHS Compliant (Note 1)  
Notes:  
1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. No purposely added lead. Halogen and Antimony free.  
Please visit our website at http://www.diodes.com/products/lead_free.html  
1 of 12  
www.diodes.com  
February 2012  
© Diodes Incorporated  
74LVC1G125  
Document number: DS32202 Rev. 6 - 2  
74LVC1G125  
SINGLE BUFFER GATE WITH 3-STATE OUTPUT  
Pin Descriptions  
Logic Diagram  
Pin Name  
Description  
1
OE  
OE  
A
Output Enable  
Data Input  
2
4
A
Y
GND  
Y
Ground  
Data Output  
Supply Voltage  
No Connection  
VCC  
NC  
Function Table  
Inputs  
Output  
Y
A
OE  
L
H
L
H
L
L
H
X
Z
Absolute Maximum Ratings (Note 2)  
Symbol  
ESD HBM  
ESD CDM  
ESD MM  
VCC  
Description  
Rating  
2
Unit  
KV  
KV  
V
Human Body Model ESD Protection  
Charged Device Model ESD Protection  
Machine Model ESD Protection  
Supply Voltage Range  
1
200  
-0.5 to 6.5  
-0.5 to 6.5  
-0.5 to 6.5  
-0.3 to VCC +0.5  
-50  
V
VI  
Input Voltage Range  
V
VO  
Voltage applied to output in high impedance or IOFF state  
Voltage applied to output in high or low state  
Input Clamp Current VI<0  
V
VO  
V
IIK  
mA  
mA  
mA  
mA  
°C  
°C  
IOK  
Output Clamp Current  
-50  
IO  
Continuous output current  
±50  
ICC, IGND  
TJ  
Continuous current through Vcc or GND  
Operating Junction Temperature  
Storage Temperature  
±100  
-40 to 150  
-65 to 150  
TSTG  
Notes:  
2. Stresses beyond the absolute maximum may result in immediate failure or reduced reliability. These are stress values and device  
operation should be within recommend values.  
2 of 12  
www.diodes.com  
February 2012  
© Diodes Incorporated  
74LVC1G125  
Document number: DS32202 Rev. 6 - 2  
74LVC1G125  
SINGLE BUFFER GATE WITH 3-STATE OUTPUT  
Recommended Operating Conditions (Note 3)  
Symbol  
Parameter  
Min  
1.65  
Max  
Unit  
V
Operating  
5.5  
VCC  
Operating Voltage  
Data retention only  
1.5  
V
V
CC = 1.65V to 1.95V  
0.65 X VCC  
1.7  
VCC = 2.3V to 2.7V  
VCC = 3V to 3.6V  
VCC = 4.5V to 5.5V  
VCC = 1.65V to 1.95V  
VCC = 2.3V to 2.7V  
VCC = 3V to 3.6V  
VCC = 4.5V to 5.5V  
VIH  
High-level Input Voltage  
V
V
2
0.7 X VCC  
0.35 X VCC  
0.7  
0.8  
0.3 X VCC  
5.5  
VCC  
-4  
VIL  
Low-level input voltage  
VI  
Input Voltage  
0
0
V
V
VO  
Output Voltage  
VCC = 1.65V  
VCC = 2.3V  
-8  
IOH  
High-level output current  
Low-level output current  
mA  
mA  
-16  
-24  
-32  
4
VCC = 3V  
VCC = 4.5V  
VCC = 1.65V  
VCC = 2.3V  
8
IOL  
16  
VCC = 3V  
24  
VCC = 4.5V  
32  
V
CC = 1.8V ± 0.15V, 2.5V ± 0.2V  
20  
Input transition rise or fall  
rate  
Δt/ΔV  
VCC = 3.3V ± 0.3V  
VCC = 5V ± 0.5V  
10  
ns/V  
ºC  
5
Operating free-air  
temperature  
TA  
-40  
125  
Notes: 3. Unused inputs should be held at V or Ground.  
CC  
3 of 12  
www.diodes.com  
February 2012  
© Diodes Incorporated  
74LVC1G125  
Document number: DS32202 Rev. 6 - 2  
74LVC1G125  
SINGLE BUFFER GATE WITH 3-STATE OUTPUT  
Electrical Characteristics (All typical values are at VCC = 3.3V, TA = 25°C)  
-40ºC to 85ºC  
Typ.  
-40ºC to 125ºC  
Symbol Parameter  
Test Conditions  
VCC  
Unit  
Min  
Max  
Min  
VCC – 0.1  
0.95  
1.7  
Max  
IOH = -100μA  
IOH = -4mA  
IOH = -8mA  
IOH = -16mA  
IOH = -24mA  
IOH = -32mA  
IOL = 100μA  
IOL = 4mA  
1.65V to 5.5V VCC – 0.1  
1.65V  
2.3V  
1.2  
1.9  
2.4  
2.3  
3.8  
High Level  
VOH  
Output  
V
2.2  
Voltage  
3V  
2.0  
4.5V  
1.65V to 5.5V  
1.65V  
3.4  
0.1  
0.45  
0.3  
0.1  
0.7  
0.45  
0.6  
0.8  
.8  
Low Level  
Output  
IOL = 8mA  
2.3V  
VOL  
V
IOL = 16mA  
IOL = 24mA  
IOL = 32mA  
0.4  
Voltage  
3V  
0.55  
0.55  
4.5V  
II  
Input Current VI = 5.5 V or GND  
Power Down  
0 to 5.5V  
± 0.1  
±5  
± 100  
μA  
μA  
IOFF  
Leakage  
Current  
VI or VO = 5.5V  
0V  
±10  
±200  
Z State  
Leakage  
Current  
IOZ  
ICC  
ΔICC  
Ci  
VO =0 to 5.5V  
3.6V  
5.5V  
0.1  
0.1  
10  
10  
20  
μA  
μA  
μA  
pF  
VI = 5.5V or GND  
IO=0  
Supply  
Current  
200  
One input at VCC  
Additional  
Supply  
Current  
0.6V Other inputs at  
VCC or GND  
3V to 5.5V  
3.3V  
500  
5000  
Input  
Capacitance  
Vi = VCC – or GND  
5
Operating Characteristics  
TA = 25 ºC  
Parameter  
Outputs  
VCC = 1.8V  
Typ.  
VCC = 2.5V  
Typ.  
VCC = 3.3V  
Typ.  
VCC = 5V  
Typ.  
Test  
Conditions  
Unit  
19  
2
19  
2
19  
3
21  
4
Power  
enabled  
Cpd  
dissipation  
f = 10 MHz  
pF  
Outputs  
disabled  
capacitance  
4 of 12  
www.diodes.com  
February 2012  
© Diodes Incorporated  
74LVC1G125  
Document number: DS32202 Rev. 6 - 2  
74LVC1G125  
SINGLE BUFFER GATE WITH 3-STATE OUTPUT  
Package Characteristics (All typical values are at VCC = 3.3V, TA = 25°C)  
Symbol  
Parameter  
Test Conditions  
SOT25  
VCC  
Min  
Typ.  
204  
371  
231  
445  
460  
52  
Max  
Unit  
SOT353  
oC/W  
Thermal Resistance  
Junction-to-Ambient  
θJA  
SOT553  
(Note 4)  
X2-DFN1010-6  
X2-DFN1410-6  
SOT25  
SOT353  
143  
105  
250  
265  
oC/W  
Thermal Resistance  
Junction-to-Case  
θJC  
SOT553  
(Note 4)  
X2-DFN1010-6  
X2-DFN1410-6  
Notes: 4. Test condition for SOT25, SOT353, SOT553, X2-DFN1410-6 and X2-DFN1010-6: Device mounted on FR-4 substrate PC board, 2oz copper, with  
minimum recommended pad layout.  
Switching Characteristics  
Figure 1 Typical Values at TA = 25 ºC and nominal voltages 1.8V, 2.5V, 2.7V, 3.3V, and 5.0V.  
TA = -40ºC to 85ºC  
TA = -40ºC to 125ºC  
From  
Input  
To  
Output  
Parameter  
VCC  
Unit  
Min  
1.0  
0.5  
0.5  
0.5  
0.5  
Typ  
3.3  
2.2  
2.5  
2.1  
1.7  
Max  
8.0  
5.5  
5.5  
4.5  
4.0  
Min  
1.0  
0.5  
0.5  
0.5  
0.5  
Max  
10.5  
7.0  
1.8V ± 0.15V  
2.5V ± 0.2V  
2.7V  
7.5  
tpd  
A
Y
ns  
3.3V ± 0.3V  
5.0V ± 0.5V  
6.0  
5.5  
1.0  
0.5  
0.5  
0.5  
0.5  
1.0  
0.5  
0.5  
0.5  
0.5  
12.0  
8.5  
8.5  
7.0  
6.5  
12.0  
6.5  
6.5  
6.5  
5.5  
1.8 V ± 0.15V  
2.5V ± 0.2V  
2.7V  
1.0  
0.5  
0.5  
0.5  
0.5  
1.0  
0.5  
0.5  
0.5  
0.5  
4.1  
2.8  
3.3  
2.4  
2.1  
4.3  
2.7  
3.0  
3.1  
2.2  
9.4  
6.6  
6.6  
5.3  
5.0  
9.2  
5.0  
5.0  
5.0  
4.2  
ten  
Y
Y
ns  
ns  
OE  
OE  
3.3V ± 0.3V  
5.0V ± 0.5V  
1.8V ± 0.15V  
2.5V ± 0.2V  
2.7V  
tdis  
3.3V ± 0.3V  
5.0V ± 0.5V  
5 of 12  
www.diodes.com  
February 2012  
© Diodes Incorporated  
74LVC1G125  
Document number: DS32202 Rev. 6 - 2  
74LVC1G125  
SINGLE BUFFER GATE WITH 3-STATE OUTPUT  
Parameter Measurement Information  
VLOAD  
Open  
GND  
TEST  
S1  
S1  
RL  
From Output  
Under Test  
tPLH/tPHL  
tPLZ/tPZL  
tPHZ/tPZH  
Open  
Vload  
GND  
CL  
RL  
(see Note A)  
Inputs  
VCC  
VM  
VLOAD  
CL  
RL  
V  
VI  
tr/tf  
1.8V±0.15V  
2.5V±0.2V  
2.7V  
2ns  
30pF  
30pF  
50pF  
50pF  
50pF  
1KΩ  
500Ω  
500Ω  
500Ω  
500Ω  
0.15V  
0.15V  
0.3V  
VCC  
VCC  
2.7V  
3V  
VCC/2  
VCC/2  
1.5V  
2 X VCC  
2 X VCC  
6V  
2ns  
2.5ns  
2.5ns  
2.5ns  
3.3V±0.3V  
5V±0.5V  
1.5V  
6V  
0.3V  
0.3V  
VCC  
VCC/2  
2 X VCC  
Voltage Waveform Pulse Duration  
Voltage Waveform Enable and Disable Times  
Low and High Level Enabling  
Voltage Waveform Propagation Delay Times  
Inverting and Non Inverting Outputs  
Figure 1. Load Circuit and Voltage Waveforms  
Notes: A. Includes test lead and test apparatus capacitance.  
B. All pulses are supplied at pulse repetition rate 10 MHz.  
C. Inputs are measured separately one transition per measurement.  
D. tPLZ and tPHZ are the same as tdis.  
E. tPZL and tPZH are the same as tEN.  
F. tPLH and tPHL are the same as tPD.  
6 of 12  
www.diodes.com  
February 2012  
© Diodes Incorporated  
74LVC1G125  
Document number: DS32202 Rev. 6 - 2  
74LVC1G125  
SINGLE BUFFER GATE WITH 3-STATE OUTPUT  
Ordering Information  
74LVC1G 125 XXX -7  
Logic Device  
Function  
Package  
Packing  
74 : Logic Prefix  
LVC : 1.65 to 5.5V  
Family  
125 : 3-State Buffer W5 : SOT25  
7 : Tape & Reel  
OE - Low  
SE : SOT353  
Z : SOT553  
1G : One Gate  
FW4 : X2-DFN1010-6  
FZ4 : X2-DFN1410-6  
7” Tape and Reel  
Packaging  
(Note 6)  
Package  
Code  
Device  
Quantity  
Part Number Suffix  
74LVC1G125W5-7  
74LVC1G125SE-7  
74LVC1G125Z-7  
W5  
SE  
SOT25  
3000/Tape & Reel  
3000/Tape & Reel  
4000/Tape & Reel  
5000/Tape & Reel  
5000/Tape & Reel  
-7  
-7  
-7  
-7  
-7  
SOT353  
Z
SOT553  
74LVC1G125FW4-7  
74LVC1G125FZ4-7  
FW4  
FZ4  
X2-DFN1010-6  
X2-DFN1410-6  
Notes:  
5. Pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at  
http://www.diodes.com/datasheets/ap02001.pdf  
6. The taping orientation is located on our website at http://www.diodes.com/datasheets/ap02007.pdf  
Marking Information  
(1) SOT25, SOT353 and SOT553  
Part Number  
74LVC1G125W5  
74LVC1G125SE  
74LVC1G125Z  
Package  
SOT25  
Identification Code  
UY  
UY  
UY  
SOT353  
SOT553  
(2) X2-DFN1010-6 and X2-DFN1410-6  
(Top View)  
XX : Identification Code  
Y : Year 0~9  
W : Week : A~Z : 1~26 week;  
a~z : 27~52 week;  
z represents 52 and 53 week  
X : A~Z : Internal Code  
XX  
Y W X  
Part Number  
Package  
Identification Code  
74LVC1G125FW4  
74LVC1G125FZ4  
X2-DFN1010-6  
X2-DFN1410-6  
UY  
UY  
7 of 12  
www.diodes.com  
February 2012  
© Diodes Incorporated  
74LVC1G125  
Document number: DS32202 Rev. 6 - 2  
74LVC1G125  
SINGLE BUFFER GATE WITH 3-STATE OUTPUT  
Package Outline Dimensions (All Dimensions in mm)  
(1) Package Type: SOT25  
SOT25  
A
Dim Min Max Typ  
A
B
C
D
H
J
0.35 0.50 0.38  
1.50 1.70 1.60  
2.70 3.00 2.80  
B C  
0.95  
2.90 3.10 3.00  
0.013 0.10 0.05  
1.00 1.30 1.10  
0.35 0.55 0.40  
0.10 0.20 0.15  
0.70 0.80 0.75  
H
K
L
K
M
N
M
N
α
J
0°  
8°  
L
D
All Dimensions in mm  
(2) Package Type: SOT353  
A
SOT353  
Dim  
A
B
C
D
F
Min  
0.10  
1.15  
2.00  
Max  
0.30  
1.35  
2.20  
B C  
0.65 Typ  
0.40  
1.80  
0
0.45  
2.20  
0.10  
1.00  
0.40  
0.22  
8°  
H
H
J
K
M
K
L
0.90  
0.25  
0.10  
0°  
J
L
D
F
M
α
All Dimensions in mm  
(3) Package Type: SOT553  
D
e1  
SOT553  
Dim Min Max  
Typ  
A
b
0.55 0.62 0.60  
0.15 0.30 0.20  
0.10 0.18 0.15  
1.50 1.70 1.60  
1.55 1.70 1.60  
1.10 1.25 1.20  
0.50 BSC  
e
E/2  
E1/2  
c
E1  
E
D
E
L (5x)  
E1  
e
c
b (5x)  
F
R0.1 MAX.  
TYP.  
e1  
F
1.00 BSC  
0.00 0.10  
0.10 0.30 0.20  
6° 8° 7°  
––  
L
A
a
All Dimensions in mm  
TYP.  
8 of 12  
www.diodes.com  
February 2012  
© Diodes Incorporated  
74LVC1G125  
Document number: DS32202 Rev. 6 - 2  
74LVC1G125  
SINGLE BUFFER GATE WITH 3-STATE OUTPUT  
Package Outline Dimensions (cont.)  
(4) Package Type X2-DFN1010-6  
X2-DFN1010-6  
A1  
A
A3  
Dim Min  
Max  
0.40 0.39  
0.00 0.05 0.02  
–– –– 0.13  
Typ  
A
A1  
A3  
b
––  
0.14 0.20 0.17  
0.05 0.15 0.10  
0.95 1.05 1.00  
0.95 1.05 1.00  
D
b1  
D
(Pin #1 ID)  
e
E
b1  
e
––  
––  
0.35  
L
0.35 0.45 0.40  
E
K
K
0.15  
––  
––  
––  
––  
Z
0.065  
L(6x)  
All Dimensions in mm  
Z(4x)  
b(6x)  
(5) Package Type: X2-DFN1410-6  
A3  
A1  
X2-DFN1410-6  
Dim Min Max  
0.40 0.39  
0.00 0.05 0.02  
–– –– 0.13  
A
Typ  
A
A1  
A3  
b
––  
Seating Plane  
D
0.15 0.25 0.20  
1.35 1.45 1.40  
0.95 1.05 1.00  
e
D
(Pin #1 ID)  
E
e
––  
0.25 0.35 0.30  
–– –– 0.10  
––  
0.50  
L(6x)  
L
E
Z
Z1 0.045 0.105 0.075  
All Dimensions in mm  
Z1(4x)  
Z(4x)  
b(6x)  
9 of 12  
www.diodes.com  
February 2012  
© Diodes Incorporated  
74LVC1G125  
Document number: DS32202 Rev. 6 - 2  
74LVC1G125  
SINGLE BUFFER GATE WITH 3-STATE OUTPUT  
Suggested Pad Layout  
(1) Package Type: SOT25  
C2  
C2  
Dimensions Value (in mm)  
Z
G
3.20  
1.60  
0.55  
0.80  
2.40  
0.95  
X
Y
C1  
G
Z
C1  
C2  
Y
X
(2) Package Type: SOT353  
C2  
C2  
Dimensions Value (in mm)  
Z
G
2.5  
1.3  
C1  
X
0.42  
0.6  
G
Z
Y
C1  
C2  
1.9  
Y
0.65  
X
(3) Package Type: SOT553  
C2  
C2  
Dimensions Value (in mm)  
Z
G
2.2  
1.2  
C1  
G
Y
X
0.375  
0.5  
Z
Y
1.7  
C1  
C2  
0.5  
X
10 of 12  
www.diodes.com  
February 2012  
© Diodes Incorporated  
74LVC1G125  
Document number: DS32202 Rev. 6 - 2  
74LVC1G125  
SINGLE BUFFER GATE WITH 3-STATE OUTPUT  
Suggested Pad Layout (cont.)  
(4) Package Type X2-DFN1010-6  
X1  
C
Value  
Dimensions  
(in mm)  
C
G
0.350  
0.150  
0.200  
0.900  
0.550  
1.250  
Y (6x)  
X
X1  
Y
Y1  
Y1  
1
G(4x)  
X(6x)  
(5) Package Type: X2-DFN1410-6  
X1  
C
Value  
(in mm)  
Dimensions  
Y(6x)  
C
G
0.500  
0.250  
0.250  
1.250  
0.525  
1.250  
X
Y1  
X1  
Y
Y1  
1
G(4x)  
X(6x)  
11 of 12  
www.diodes.com  
February 2012  
© Diodes Incorporated  
74LVC1G125  
Document number: DS32202 Rev. 6 - 2  
74LVC1G125  
SINGLE BUFFER GATE WITH 3-STATE OUTPUT  
IMPORTANT NOTICE  
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS  
DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A  
PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).  
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other  
changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability  
arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any  
license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described  
herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies  
whose products are represented on Diodes Incorporated website, harmless against all damages.  
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized  
sales channel.  
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall  
indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees  
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.  
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names  
and markings noted herein may also be covered by one or more United States, international or foreign trademarks.  
LIFE SUPPORT  
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without  
the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:  
A. Life support devices or systems are devices or systems which:  
1. are intended to implant into the body, or  
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided  
in the labeling can be reasonably expected to result in significant injury to the user.  
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected  
to cause the failure of the life support device or to affect its safety or effectiveness.  
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or  
systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements  
concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems,  
notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further,  
Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes  
Incorporated products in such safety-critical, life support devices or systems.  
Copyright © 2012, Diodes Incorporated  
www.diodes.com  
12 of 12  
www.diodes.com  
February 2012  
© Diodes Incorporated  
74LVC1G125  
Document number: DS32202 Rev. 6 - 2  

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