74LVC1G125FZ4 [DIODES]

SINGLE BUFFER GATE WITH 3-STATE OUTPUT; 具有三态输出单缓冲门
74LVC1G125FZ4
型号: 74LVC1G125FZ4
厂家: DIODES INCORPORATED    DIODES INCORPORATED
描述:

SINGLE BUFFER GATE WITH 3-STATE OUTPUT
具有三态输出单缓冲门

输出元件
文件: 总14页 (文件大小:260K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
74LVC1G125  
SINGLE BUFFER GATE WITH 3-STATE OUTPUT  
Description  
Pin Assignments  
(Top View)  
The 74LVC1G125 is a single non-inverting buffer/bus driver  
with a 3-state output. The output enters a high impedance  
state when a HIGH-level is applied to the output enable (OE)  
pin. The device is designed for operation with a power supply  
range of 1.65V to 5.5V. The inputs are tolerant to 5.5V  
Vcc  
Y
1
2
3
5
4
OE  
A
GND  
allowing this device to be used in  
a mixed voltage  
environment. The device is fully specified for partial power  
down applications using IOFF. The IOFF circuitry disables the  
output preventing damaging current backflow when the device  
is powered down.  
SOT25 / SOT353  
(Top View)  
6
1
2
3
OE  
A
Vcc  
Features  
5
4
NC  
Y
Wide Supply Voltage Range from 1.65 to 5.5V  
± 24mA Output Drive at 3.3V  
GND  
CMOS low power consumption  
DFN1410 (Note 2)  
I
OFF Supports Partial-Power-Down Mode Operation  
Inputs accept up to 5.5V  
Applications  
ESD Protection Tested per JESD 22  
Exceeds 200-V Machine Model (A115-A)  
Exceeds 2000-V Human Body Model (A114-A)  
Latch-Up Exceeds 100mA per JESD 78, Class II Latch-  
Up Exceeds 100mA per JESD 78, Class II  
Range of Package Options  
Voltage Level Shifting  
Bus Driver / Repeater  
Power Down Signal Isolation  
General Purpose Logic  
Wide array of products such as.  
Direct Interface with TTL Levels  
o
o
o
o
o
PCs, networking, notebooks, netbooks, PDAs  
Computer peripherals, hard drives, CD/DVD ROM  
TV, DVD, DVR, set top box  
Cell Phones, Personal Navigation / GPS  
MP3 players ,Cameras, Video Recorders  
SOT25, SOT353, and DFN1410: Assembled with “Green”  
Molding Compound (no Br, Sb)  
Lead Free Finish/ RoHS Compliant (Note 1)  
Notes: 1. EU Directive 2002/95/EC (RoHS). All applicable RoHS exemptions applied. Please visit our website at  
http://www.diodes.com/products/lead_free.html.  
2. Pin 2 and pin 5 of the DFN1410 package are internally connected.  
1 of 14  
www.diodes.com  
October 2010  
© Diodes Incorporated  
74LVC1G125  
Document number: DS32202 Rev. 2 - 2  
74LVC1G125  
SINGLE BUFFER GATE WITH 3-STATE OUTPUT  
Pin Descriptions  
Pin Name  
Description  
Output Enable  
OE  
A
Data Input  
GND  
Y
Ground  
Data Output  
Supply Voltage  
No Connection  
Vcc  
NC  
Logic Diagram  
1
OE  
2
4
A
Y
Function Table  
Inputs  
Output  
A
H
L
Y
H
L
OE  
L
L
H
Z
X
2 of 14  
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October 2010  
© Diodes Incorporated  
74LVC1G125  
Document number: DS32202 Rev. 2 - 2  
74LVC1G125  
SINGLE BUFFER GATE WITH 3-STATE OUTPUT  
Absolute Maximum Ratings (Note 3)  
Symbol  
ESD HBM  
ESD MM  
Description  
Rating  
2
Unit  
KV  
V
Human Body Model ESD Protection  
Machine Model ESD Protection  
Supply Voltage Range  
200  
-0.5 to 6.5  
V
VCC  
VI  
Input Voltage Range  
-0.5 to 6.5  
-0.5 to 6.5  
V
V
Vo  
Vo  
IIK  
Voltage applied to output in high impedance or IOFF state  
Voltage applied to output in high or low state  
V
-0.3 to VCC +0.5  
-50  
mA  
mA  
mA  
mA  
°C  
°C  
Input Clamp Current VI<0  
Output Clamp Current  
-50  
IOK  
IO  
Continuous output current  
Continuous current through Vdd or GND  
Operating Junction Temperature  
Storage Temperature  
±50  
±100  
-40 to 150  
-65 to 150  
TJ  
TSTG  
Notes: 3. Stresses beyond the absolute maximum may result in immediate failure or reduced reliability. These are stress values and device  
operation should be within recommend values.  
3 of 14  
www.diodes.com  
October 2010  
© Diodes Incorporated  
74LVC1G125  
Document number: DS32202 Rev. 2 - 2  
74LVC1G125  
SINGLE BUFFER GATE WITH 3-STATE OUTPUT  
Recommended Operating Conditions (Note 4)  
Symbol  
Parameter  
Min  
1.65  
1.5  
Max  
Unit  
V
Operating  
5.5  
Operating Voltage  
VCC  
Data retention only  
V
VCC = 1.65V to 1.95V  
0.65 X VCC  
1.7  
2
VCC = 2.3V to 2.7V  
VCC = 3V to 3.6V  
VCC = 4.5V to 5.5V  
High-level Input Voltage  
V
V
VIH  
0.7 X VCC  
VCC = 1.65V to 1.95V  
0.35 X VCC  
0.7  
0.8  
VCC = 2.3V to 2.7V  
VCC = 3V to 3.6V  
VCC = 4.5V to 5.5V  
Low-level input voltage  
VIL  
0.3 X VCC  
5.5  
Input Voltage  
0
0
V
V
VI  
Output Voltage  
VO  
VCC  
-4  
VCC = 1.65V  
-8  
VCC = 2.3V  
High-level output current  
Low-level output current  
mA  
mA  
IOH  
-16  
-24  
-32  
VCC = 3V  
VCC = 4.5V  
4
VCC = 1.65V  
8
VCC = 2.3V  
IOL  
16  
24  
32  
VCC = 3V  
VCC = 4.5V  
20  
10  
5
V
CC = 1.8V ± 0.15V, 2.5V ± 0.2V  
Input transition rise or fall  
rate  
Δt/ΔV  
ns/V  
ºC  
VCC = 3.3V ± 0.3V  
VCC = 5V ± 0.5V  
Operating free-air  
temperature  
-40  
85  
TA  
Notes: 4. Unused inputs should be held at Vcc or Ground.  
4 of 14  
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October 2010  
© Diodes Incorporated  
74LVC1G125  
Document number: DS32202 Rev. 2 - 2  
74LVC1G125  
SINGLE BUFFER GATE WITH 3-STATE OUTPUT  
Electrical Characteristics (All typical values are at Vcc = 3.3V, TA = 25°C)  
Over recommended free-air temperature range (unless otherwise noted)  
Test Conditions  
OH = -100μA  
Vcc  
1.65V to 5.5V  
1.65V  
Symbol  
Parameter  
Min  
Typ.  
Max  
Unit  
I
VCC – 0.1  
1.2  
IOH = -4mA  
IOH = -8mA  
IOH = -16mA  
IOH = -24mA  
IOH = -32mA  
2.3V  
1.9  
High Level Output  
Voltage  
V
VOH  
2.4  
3V  
2.3  
4.5V  
1.65V to 5.5V  
1.65V  
3.8  
0.1  
0.45  
0.3  
IOL = 100μA  
IOL = 4mA  
2.3V  
IOL = 8mA  
High-level Input Voltage  
Input Current  
V
VOL  
0.4  
IOL = 16mA  
IOL = 24mA  
IOL = 32mA  
VI = 5.5V or GND  
3V  
0.55  
0.55  
± 5  
4.5V  
0 to 5.5V  
μA  
μA  
μA  
II  
Power Down Leakage  
Current  
± 10  
± 10  
IOFF  
IOZ  
VI or VO = 5.5V  
0
Z State Leakage Current  
3.6V  
VO =0 to 5.5V  
VI = 5.5V of GND  
IO=0  
Supply Current  
1.65V to 5.5V  
10  
μA  
ICC  
One input at VCC  
Additional Supply Current 0.6 V Other inputs at  
3V to 5.5V  
500  
μA  
ΔICC  
Ci  
VCC or GND  
4
Input Capacitance  
3.3  
pF  
Vi = VCC – or GND  
SOT25  
(Note 5)  
(Note 5)  
(Note 5)  
(Note 5)  
(Note 5)  
(Note 5)  
204  
371  
430  
52  
oC/W  
oC/W  
oC/W  
oC/W  
oC/W  
oC/W  
Thermal Resistance  
Junction-to-Ambient  
SOT353  
θJA  
DFN1410  
SOT25  
Thermal Resistance  
Junction-to-Case  
SOT353  
143  
190  
θJC  
DFN1410  
Notes: 5. Test condition for SOT25, SOT353, and DFN1410: Device mounted on FR-4 substrate PC board, 2oz copper, with minimum  
recommended pad layout.  
5 of 14  
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October 2010  
© Diodes Incorporated  
74LVC1G125  
Document number: DS32202 Rev. 2 - 2  
74LVC1G125  
SINGLE BUFFER GATE WITH 3-STATE OUTPUT  
Switching Characteristics  
Over recommended free-air temperature range, CL = 15pF (see Figure 1)  
Vcc = 1.8 V  
± 0.15V  
Vcc = 2.5 V  
± 0.2V  
Vcc = 3.3 V  
± 0.3V  
Vcc = 5 V  
± 0.5V  
From  
(Input)  
TO  
(OUTPUT)  
Parameter  
Unit  
Min  
Max  
Min Max  
Min  
Max  
Min  
Max  
1.9  
6.9  
0.6  
3.7  
A
Y
0.7  
4.6  
0.5  
3.4  
ns  
tpd  
Over recommended free-air temperature range, CL = 30 or 50pF as noted (see Figure 2)  
Vcc = 1.8 V  
± 0.15V  
Vcc = 2.5 V  
± 0.2V  
Vcc = 3.3 V  
± 0.3V  
Vcc = 5 V  
± 0.5V  
From  
(Input)  
TO  
(OUTPUT)  
Parameter  
Unit  
Min  
Max  
Min Max  
Min  
Max  
Min  
Max  
2.8  
9.0  
10.1  
9.2  
1.0  
4.5  
A
Y
Y
1.2  
1.5  
5.5  
6.6  
1.0  
1.0  
4.0  
ns  
ns  
tpd  
ten  
5.0  
4.2  
2.8  
1.3  
1.0  
1.0  
5.3  
5.5  
OE  
OE  
Y
1.0  
5.5  
1.0  
ns  
tdis  
Operating Characteristics  
TA = 25 ºC  
Vcc = 1.8 V Vcc = 2.5 V Vcc = 3.3 V Vcc = 5 V  
Test  
Conditions  
Parameter  
Unit  
TYP  
TYP  
TYP  
TYP  
Outputs  
enabled  
19  
19  
19  
21  
Power  
dissipation  
capacitance  
f = 10 MHz  
pF  
Cpd  
Outputs  
disabled  
2
2
3
4
6 of 14  
www.diodes.com  
October 2010  
© Diodes Incorporated  
74LVC1G125  
Document number: DS32202 Rev. 2 - 2  
74LVC1G125  
SINGLE BUFFER GATE WITH 3-STATE OUTPUT  
Parameter Measurement Information  
VLOAD  
Open  
GND  
TEST  
tPLH/tPHL  
tPLZ/tPZL  
tPHZ/tPZH  
S1  
S1  
RL  
From Output  
Under Test  
Open  
Vload  
GND  
CL  
RL  
(see Note A)  
Inputs  
Vcc  
V  
VM  
VLOAD  
CL  
RL  
VI  
tr/tf  
1.8V±0.15V  
2.5V±0.2V  
2ns  
15pF  
15pF  
1MΩ  
1MΩ  
0.15V  
0.15V  
VCC  
VCC/2  
2 X VCC  
2ns  
VCC  
3V  
VCC/2  
1.5V  
2 X VCC  
6V  
3.3V±0.3V  
5V±0.5V  
2.5ns  
2.5ns  
15pF  
15pF  
1MΩ  
1MΩ  
0.3V  
0.3V  
VCC  
VCC/2  
2 X VCC  
Voltage Waveform Pulse Duration  
Voltage Waveform Enable and Disable Times  
Low and High Level Enabling  
Voltage Waveform Propagation Delay Times  
Inverting and Non Inverting Outputs  
Figure 1. Load Circuit and Voltage Waveforms  
Notes: A. Includes test lead and test apparatus capacitance.  
B. All pulses are supplied at pulse repetition rate 10 MHz.  
C. Inputs are measured separately one transition per measurement.  
D. tPLZ and tPHZ are the same as tdis.  
E. tPZL and tPZH are the same as tEN.  
F. tPLH and tPHL are the same as tPD.  
7 of 14  
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October 2010  
© Diodes Incorporated  
74LVC1G125  
Document number: DS32202 Rev. 2 - 2  
74LVC1G125  
SINGLE BUFFER GATE WITH 3-STATE OUTPUT  
Parameter Measurement Information (Continued)  
VLOAD  
Open  
GND  
S1  
TEST  
tPLH/tPHL  
tPLZ/tPZL  
tPHZ/tPZH  
S1  
RL  
From Output  
Under Test  
Open  
Vload  
GND  
CL  
RL  
(see Note A)  
Inputs  
Vcc  
V∆  
VM  
VLOAD  
CL  
RL  
VI  
tr/tf  
1.8V±0.15V  
2.5V±0.2V  
2ns  
30pF  
30pF  
1KΩ  
0.15V  
0.15V  
VCC  
VCC/2  
2 X VCC  
2ns  
500Ω  
VCC  
3V  
VCC/2  
1.5V  
2 X VCC  
6V  
3.3V±0.3V  
5V±0.5V  
2.5ns  
2.5ns  
50pF  
50pF  
500Ω  
500Ω  
0.3V  
0.3V  
VCC  
VCC/2  
2 X VCC  
Voltage Waveform Pulse Duration  
Voltage Waveform Enable and Disable Times  
Low and High Level Enabling  
Voltage Waveform Propagation Delay Times  
Inverting and Non Inverting Outputs  
Figure 2. Load Circuit and Voltage Waveforms  
Notes: A. Includes test lead and test apparatus capacitance.  
B. All pulses are supplied at pulse repetition rate 10 MHz.  
C. Inputs are measured separately one transition per measurement.  
D. tPLZ and tPHZ are the same as tdis.  
E. tPZL and tPZH are the same as tEN0  
F. tPLH and tPHL are the same as tPD.  
8 of 14  
www.diodes.com  
October 2010  
© Diodes Incorporated  
74LVC1G125  
Document number: DS32202 Rev. 2 - 2  
74LVC1G125  
SINGLE BUFFER GATE WITH 3-STATE OUTPUT  
Ordering Information  
74LVC1G 125 XXX - 7  
Function  
Package  
Logic Device  
Packing  
74 : Logic Prefix  
LVC : 1.65 to 5.5V  
Family  
7 : Tape & Reel  
W5 : SOT25  
SE : SOT353  
FZ4 : DFN1410  
125 : 3-State Buffer  
OE-Low  
1G : One gate  
7” Tape and Reel  
Package  
Code  
Packaging  
(Note 6)  
Device  
Quantity  
Part Number Suffix  
74LVC1G125W5-7  
74LVC1G125SE-7  
74LVC1G125FZ4-7  
W5  
SE  
FZ4  
SOT25  
SOT353  
DFN1410  
3000/Tape & Reel  
3000/Tape & Reel  
5000/Tape & Reel  
-7  
-7  
-7  
Notes: 6. Pad layout as shown on Diodes Inc. suggested pad layout document AP02001, which can be found on our website at  
http://www.diodes.com/datasheets/ap02001.pdf.  
9 of 14  
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October 2010  
© Diodes Incorporated  
74LVC1G125  
Document number: DS32202 Rev. 2 - 2  
74LVC1G125  
SINGLE BUFFER GATE WITH 3-STATE OUTPUT  
Marking Information  
(1) SOT25 and SOT353  
(Top View)  
5
1
4
XX : Identification code  
Y : Year 0~9  
W : Week : A~Z : 1~26 week;  
a~z : 27~52 week; z represents  
52 and 53 week  
W X  
XX Y  
X : A~Z : Internal code  
2
3
Part Number  
Package  
Identification Code  
74LVC1G125W5  
74LVC1G125SE  
SOT25  
SOT353  
UY  
UY  
(2) DFN1410  
(Top View)  
XX : Identification Code  
Y : Year : 0~9  
XX  
W : Week : A~Z : 1~26 week;  
a~z : 27~52 week; z represents  
52 and 53 week  
Y W X  
X : A~Z : Internal code  
Part Number  
74LVC1G125FZ4  
Package  
Identification Code  
DFN1410  
UY  
10 of 14  
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October 2010  
© Diodes Incorporated  
74LVC1G125  
Document number: DS32202 Rev. 2 - 2  
74LVC1G125  
SINGLE BUFFER GATE WITH 3-STATE OUTPUT  
Package Outline Dimensions (All Dimensions in mm)  
(1) Package Type: SOT25  
(2) Package Type: SOT353  
6x-0.42  
C
L
0.10/0.30  
C
L
1.3  
C
L
2x-0.65  
C
L
Gauge Plane  
PIN 1  
Land Pattern Recommendation  
(unit:mm)  
Top View  
0.40/0.45  
0.65Bsc.  
C
L
0.25/0.40  
Detail"A"  
"A"  
1.8/2.2  
11 of 14  
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October 2010  
© Diodes Incorporated  
74LVC1G125  
Document number: DS32202 Rev. 2 - 2  
74LVC1G125  
SINGLE BUFFER GATE WITH 3-STATE OUTPUT  
Package Outline Dimensions (Continued)  
(3) Package Type: DFN1410  
0.10 C  
6x-  
Seating Plane  
C
0.08 C  
Side View  
6x-0.25  
1.35/1.45  
0.50Typ.  
A
B
4x-0.50Typ.  
Land Pattern Recommendation  
(mm)  
(Pin #1 ID)  
Top View  
2X-  
0.25 B  
0.10(4x)  
6x-0.15/0.25  
0.10  
C A B  
Bottom View  
12 of 14  
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October 2010  
© Diodes Incorporated  
74LVC1G125  
Document number: DS32202 Rev. 2 - 2  
74LVC1G125  
SINGLE BUFFER GATE WITH 3-STATE OUTPUT  
Taping Orientation (Note 7)  
For DFN1410  
Notes: 7. The taping orientation of the other package type can be found on our website at http://www.diodes.com/datasheets/ap02007.pdf  
13 of 14  
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October 2010  
© Diodes Incorporated  
74LVC1G125  
Document number: DS32202 Rev. 2 - 2  
74LVC1G125  
SINGLE BUFFER GATE WITH 3-STATE OUTPUT  
IMPORTANT NOTICE  
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS  
DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A  
PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).  
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other  
changes without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability  
arising out of the application or use of this document or any product described herein; neither does Diodes Incorporated convey any  
license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described  
herein in such applications shall assume all risks of such use and will agree to hold Diodes Incorporated and all the companies  
whose products are represented on Diodes Incorporated website, harmless against all damages.  
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized  
sales channel.  
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall  
indemnify and hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees  
arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.  
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names  
and markings noted herein may also be covered by one or more United States, international or foreign trademarks.  
LIFE SUPPORT  
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without  
the express written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:  
A. Life support devices or systems are devices or systems which:  
1. are intended to implant into the body, or  
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided  
in the labeling can be reasonably expected to result in significant injury to the user.  
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected  
to cause the failure of the life support device or to affect its safety or effectiveness.  
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or  
systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements  
concerning their products and any use of Diodes Incorporated products in such safety-critical, life support devices or systems,  
notwithstanding any devices- or systems-related information or support that may be provided by Diodes Incorporated. Further,  
Customers must fully indemnify Diodes Incorporated and its representatives against any damages arising out of the use of Diodes  
Incorporated products in such safety-critical, life support devices or systems.  
Copyright © 2010, Diodes Incorporated  
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October 2010  
© Diodes Incorporated  
74LVC1G125  
Document number: DS32202 Rev. 2 - 2  

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