2DA1213Y-13 [DIODES]
PNP SURFACE MOUNT TRANSISTOR; PNP表面贴装晶体管
| 型号： | 2DA1213Y-13 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | PNP SURFACE MOUNT TRANSISTOR |
| 文件： | 总5页 (文件大小：127K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2DA1213O/Y
PNP SURFACE MOUNT TRANSISTOR
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Features
Mechanical Data
•
•
•
•
•
Epitaxial Planar Die Construction
•
•
Case: SOT89-3L
Case Material: Molded Plastic, "Green” Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish — Matte Tin annealed over Copper leadframe
(Lead Free Plating). Solderable per MIL-STD-202, Method 208
Ideally Suited for Automated Assembly Processes
Ideal for Medium Power Switching or Amplification Applications
Lead Free By Design/RoHS Compliant (Note 1)
"Green" Device (Note 2)
•
•
•
•
•
Marking Information: See Page 4
Ordering Information: See Page 4
Weight: 0.055 grams (approximate)
3
2
1
E
C
B
COLLECTOR
2,4
C
4
1
BASE
3
EMITTER
Device Schematic
TOP VIEW
Pin Out Configuration
Top View
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Symbol
VCBO
VCEO
VEBO
IC
Value
-50
-50
-5
Unit
V
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
Continuous Collector Current
Base Current
-2
A
-0.4
A
IB
Thermal Characteristics
Characteristic
Symbol
PD
Rθ
Value
1
Unit
W
Power Dissipation (Note 3) @ TA = 25°C
125
°C/W
°C
Thermal Resistance, Junction to Ambient Air (Note 3) @ TA = 25°C
Operating and Storage Temperature Range
JA
-55 to +150
TJ, TSTG
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php.
3. Device mounted on FR-4 PCB; pad layout as shown on page 4 or in Diodes Inc. suggested pad layout document AP02001, which can be found on our
website at http://www.diodes.com/datasheets/ap02001.pdf.
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January 2010
© Diodes Incorporated
2DA1213O/Y
Document number: DS31306 Rev. 4 - 2
2DA1213O/Y
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 4)
Collector-Base Breakdown Voltage
Symbol
Min
Typ
Max
Unit
Conditions
-50
-50
-5
V
V
V(BR)CBO
V(BR)CEO
V(BR)EBO
ICBO
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
IC = -100μA, IE = 0
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector Cut-Off Current
IC = -10mA, IB = 0
IE = -100μA, IC = 0
VCB = -50V, IE = 0
VEB = -5V, IC = 0
V
-0.1
⎯
⎯
μA
μA
Emitter Cut-Off Current
-0.1
IEBO
ON CHARACTERISTICS (Note 4)
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
2DA1213O
-0.5
-1.2
140
240
⎯
V
V
VCE(SAT)
VBE(SAT)
⎯
⎯
70
⎯
⎯
⎯
⎯
⎯
IC = -1A, IB = -50mA
IC = -1A, IB = -50mA
VCE = -2V, IC = -0.5A
VCE = -2V, IC = -0.5A
VCE = -2V, IC = -2A
⎯
⎯
⎯
DC Current Gain
2DA1213Y
120
20
hFE
2DA1213O, 2DA1213Y
SMALL SIGNAL CHARACTERISTICS
Transition Frequency
Output Capacitance
SWITCHING CHARACTERISTICS
Turn-On Time
160
17
MHz
pF
fT
⎯
⎯
⎯
⎯
VCE = -2V, IC = -100mA, f = 100MHz
VCB = -10V, IE = 0, f = 1MHz
Cobo
25
130
12
ns
ns
ns
ton
ts
⎯
⎯
⎯
⎯
⎯
⎯
V
CE = -2V, IC = -1A,
Storage Time
IB1 = -IB2 = -50mA
Fall Time
tf
Notes:
4. Measured under pulsed conditions. Pulse width = 300μs. Duty cycle ≤2%.
1.0
1.0
0.8
I
= -10mA
= -8mA
B
0.8
0.6
I
B
0.6
0.4
I
= -6mA
= -4mA
B
0.4
I
B
I
0.2
0
0.2
0
= -2mA
B
0
25
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Dissipation vs. Ambient Temperature
50
150
100
125
75
0
1
2
3
-VCE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 2 Typical Collector Current vs. Collector-Emitter Voltage
4
5
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© Diodes Incorporated
2DA1213O/Y
Document number: DS31306 Rev. 4 - 2
2DA1213O/Y
200
150
1
100
0.1
50
0
0.01
0.0001
0.001
0.01
0.1
1
10
0.001
0.01
0.1
1
10
-IC, COLLECTOR CURRENT (A)
Fig. 4 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
1.2
1.0
1.2
1
0.8
0.6
0.4
0.2
0.8
0.6
0.4
0.2
0
0
0.0001
0.001
0.01
0.1
1
10
0.0001
0.001
0.01
0.1
1
10
-IC, COLLECTOR CURRENT (A)
-IC, COLLECTOR CURRENT (A)
Fig. 6 Typical Base-Emitter Saturation Voltage
vs. Collector Current
Fig. 5 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
60
45
200
f = 1MHz
150
100
30
15
V
= -6V
CE
50
0
f = 100MHz
0
0.01
0
10 20 30 40 50 60 70 80 90 100
-IC, COLLECTOR CURRENT (mA)
0.1
VR, REVERSE VOLTAGE (V)
Fig. 7 Typical Output Capacitance Characteristics
1
10
100
Fig. 8 Typical Gain-Bandwidth Product vs. Collector Current
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January 2010
© Diodes Incorporated
2DA1213O/Y
Document number: DS31306 Rev. 4 - 2
2DA1213O/Y
Ordering Information (Note 5)
Part Number
2DA1213O-13
2DA1213Y-13
Case
SOT89-3L
SOT89-3L
Packaging
2500/Tape & Reel
2500/Tape & Reel
Notes:
5. For packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
xxxx = Product Type Marking Code:
P25X = 2DA1213O
P25Y = 2DA1213Y
YWW = Date Code Marking
Y = Last digit of year (ex: 7 = 2007)
WW = Week code 01 - 53
YWW
xxxx
Package Outline Dimensions
D1
C
SOT89-3L
Dim
A
B
B1
C
D
Min
1.40
0.44
0.35
0.35
4.40
1.52
2.29
Max
1.60
0.62
0.54
0.43
4.60
1.83
2.60
E
H
L
B
D1
E
e
B1
e1
e
e1
H
1.50 Typ
3.00 Typ
3.94
0.89
4.25
1.20
A
L
All Dimensions in mm
D
Suggested Pad Layout
X1
Dimensions Value (in mm)
X1
X2
X3
Y1
Y2
Y3
C
1.7
0.9
0.4
2.7
1.3
1.9
3.0
Y1
X3
X2
Y2
Y3
C
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January 2010
© Diodes Incorporated
2DA1213O/Y
Document number: DS31306 Rev. 4 - 2
2DA1213O/Y
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2009, Diodes Incorporated
www.diodes.com
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January 2010
© Diodes Incorporated
2DA1213O/Y
Document number: DS31306 Rev. 4 - 2
相关型号：
2DA1213Y-13R
Small Signal Bipolar Transistor, 2A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon,
DIODES
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