2DA1213YQ-13 [DIODES]
Small Signal Bipolar Transistor,;
| 型号： | 2DA1213YQ-13 |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | Small Signal Bipolar Transistor, |
| 文件： | 总6页 (文件大小：354K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2DA1213YQ
50V PNP POWER SWITCHING TRANSISTOR IN SOT89
Description
Mechanical Data
This Bipolar Junction Transistor (BJT) is designed to meet the
stringent requirement of Automotive Applications.
Case: SOT89
Case Material: Molded Plastic. “Green” Molding Compound.
UL Flammability Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish - Matte Tin Plated Leads, Solderable per
MIL-STD-202, Method 208
Features
Weight: 0.052 grams (Approximate)
BVCEO > -50V
IC = -2A High Continuous Collector Current
High Gain Holds up
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. “Green” Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
PPAP Capable (Note 4)
SOT89
C
E
C
B
C
B
E
Top View
Pin Out
Top View
Device Symbol
Ordering Information (Notes 4 and 5)
Part Number
Marking
Reel Size (inches)
Tape Width (mm)
Quantity Per Reel
2DA1213YQ-13
P25Y
13
12
2,500
Notes:
1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant.
2. See https://www.diodes.com/quality/lead-free/ for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green" and
Lead-free.
3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and
<1000ppm antimony compounds.
4. Automotive products are AEC-Q101 qualified and are PPAP capable. Refer to https://www.diodes.com/quality/.
5. For packaging details, go to our website at https://www.diodes.com/design/support/packaging/diodes-packaging/.
Marking Information
SOT89
= Manufacturer’s Marking
xxxx = P25Y = Product Type Marking Code
YWW = Date Code Marking
Y = Last Digit of Year (ex: 8 = 2018)
WW = Week Code (01 to 53)
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© Diodes Incorporated
2DA1213YQ
Document Number: DS41104 Rev. 1 - 2
2DA1213YQ
Absolute Maximum Ratings (@TA = +25°C, unless otherwise specified.)
Characteristic
Symbol
VCBO
VCEO
VEBO
IC
Value
-50
-50
-6
Unit
V
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
Continuous Collector Current
Peak Pulse Current
Base Current
-2
A
-2.5
-500
A
ICM
mA
IB
Thermal Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Power Dissipation (Note 6)
Symbol
Value
1
Unit
W
PD
RθJA
Thermal Resistance, Junction to Ambient (Note 6)
Thermal Resistance, Junction to Leads (Note 7)
Operating and Storage Temperature Range
125
C/W
C/W
C
18.3
RθJL
-55 to +150
TJ, TSTG
Notes:
6. For a device surface mounted on 15mm x 15mm x 0.6mm FR-4 PCB with high coverage of single sided 1 oz copper, in still air conditions; the device is
measured when operating in steady state condition.
7. Thermal resistance from junction to solder-point (on the exposed collector pad).
Thermal Characteristics and Derating Information
120
100
80
60
40
20
0
1.0
0.8
0.6
0.4
0.2
0.0
D=0.5
D=0.2
Single Pulse
D=0.05
D=0.1
0
25
50
75
100 125 150
1m 10m 100m
100µ
1
10
100
1k
Temperature (oC)
Pulse Width (s)
Transient Thermal Impedance
Derating Curve
100
10
1
Single Pulse. TA=25oC
1
0
0µ
1m 10m 100m
1
10
100
1k
Pulse Width (s)
Pulse Power Dissipation
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© Diodes Incorporated
2DA1213YQ
Document Number: DS41104 Rev. 1 - 2
2DA1213YQ
Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
Characteristic
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage (Note 8)
Emitter-Base Breakdown Voltage
Collector Cut-off Current
Symbol
BVCBO
BVCEO
BVEBO
ICBO
Min
-50
-50
-6
Typ
—
Max
—
Unit
V
Test Condition
IC = -100µA
—
—
V
IC = -10mA
—
—
V
IE = -100µA
—
—
-100
-100
240
—
nA
nA
VCB = -50V
Emitter Cut-off Current
—
—
IEBO
VEB = -5V
120
20
IC = -500mA, VCE = -2V
IC = -2A, VCE = -2V
IC = -1A, IB = -50mA
IC = -1A, IB = -50mA
DC Current Gain (Note 8)
—
—
hFE
Collector-Emitter Saturation Voltage (Note 8)
Base-Emitter Saturation Voltage (Note 8)
—
—
—
-0.5
-1.2
V
V
VCE(sat)
VBE(sat)
—
IC = -100mA, VCE = -2V,
f = 100MHz
Transition Frequency
—
160
—
MHz
fT
Output Capacitance
Turn-On Time
Storage Time
Fall Time
—
—
—
—
17
25
—
—
—
—
pF
ns
ns
ns
Cobo
ton
VCB = -10V, IE = 0, f = 1MHz
VCE= -2V, IC = -1A,
IB1 = -IB2 = -50mA
130
12
t(s)
t(f)
Note:
8. Measured under pulsed conditions. Pulse width ≤ 300µs. Duty cycle ≤ 2%.
Typical Electrical Characteristics (@TA = +25°C, unless otherwise specified.)
1
1.0
I
= -10mA
= -8mA
B
I
/I = 20
B
C
0.8
0.6
I
B
I
= -6mA
= -4mA
B
0.1
T
= 85°C
A
T
= 150°C
A
0.4
I
B
TA = -55°C
= 2
T
A = 25°C
0.2
0
I
= -2mA
B
0.01
0.0001
0.001
-IC, COLLECTOR CURRENT (A)
0.01
0.1
1
10
0
1
2
3
4
5
-VCE, COLLECTOR-EMITTER VOLTAGE (V)
Figure 1 Typical Collector Current vs. Collector-Emitter Voltage
Figure 2 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
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Document Number: DS41104 Rev. 1 - 2
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1.2
1.0
1.2
1
I
/I = 20
B
C
V
= -2V
CE
0.8
0.6
0.4
0.8
0.6
0.4
0.2
T
A
= -55°C
TA = -55°C
T
= 25
T = 25
T
A = 25°C
TA = 25°C
T
= 85
TA = 85°C
T
A = 85°C
T
= 150
TA = 150°C
TA = 150°C
0.2
0
0
0.0001
0.001
-IC, COLLECTOR CURRENT (A)
Figure 4 Typical Base-Emitter Saturation Voltage
0.01
0.1
1
10
0.0001
0.001
0.01
0.1
1
10
-IC, COLLECTOR CURRENT (A)
Figure 3 Typical Base-Emitter Turn-On Voltage
vs lletorr
v
s
.
C
o
ll
e
c
to
r
C
u
rr
e
n
t
. Co c r Cu ent
200
150
60
45
f = 1MHz
100
30
15
0
V
= -6V
CE
50
0
f = 100MHz
0
10 20 30 40 50 60 70 80 90 100
-IC, COLLECTOR CURRENT (mA)
0.01
0.1
1
10
100
VR, REVERSE VOLTAGE (V)
ictpit ra
Figure 6 Typical Gain-Bandwidth Product vs.
F
ig
u
r
e
5
T
y
p
a
l
O
u
u
t
C
a
p
a
c
a
n
c
e
C
h
a
c
teri
s
ti
c
s
Collector Current
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© Diodes Incorporated
2DA1213YQ
Document Number: DS41104 Rev. 1 - 2
2DA1213YQ
Package Outline Dimensions
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT89
D1
c
SOT89
Dim Min Max
Typ
1.50
0.56
0.48
0.38
4.50
A
B
1.40 1.60
0.50 0.62
H
E
B1 0.42 0.54
c
D
0.35 0.43
4.40 4.60
D1 1.62 1.83 1.733
D2 1.61 1.81
2.40 2.60
E2 2.05 2.35
1.71
2.50
2.20
1.50
4.10
2.78
1.05
B1
L
E
B
e
e
-
-
D2
H
3.95 4.25
H1 2.63 2.93
0.90 1.20
L
8
°
(
4X)
L1 0.327 0.527 0.427
0.20 0.40 0.30
z
H1
All Dimensions in mm
E2
A
L1
D
z
Suggested Pad Layout
Please see http://www.diodes.com/package-outlines.html for the latest version.
SOT89
X2
Value
(in mm)
1.500
0.244
0.580
0.760
1.933
1.730
3.030
1.500
0.770
4.530
Dimensions
C
G
X
X1
X2
Y
Y1
Y2
Y3
Y4
Y3
Y1
Y4
X
G
Y
Y2
C
X1
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Document Number: DS41104 Rev. 1 - 2
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IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
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final and determinative format released by Diodes Incorporated.
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Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
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information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2018, Diodes Incorporated
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© Diodes Incorporated
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