2DA1774QLP [DIODES]
40V PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR; 40V PNP小信号表面贴装晶体管
| 型号： | 2DA1774QLP |
| 厂家： | 
DIODES INCORPORATED |
| 描述： | 40V PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR |
| 文件： | 总4页 (文件大小：97K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2DA1774QLP
40V PNP SMALL SIGNAL SURFACE MOUNT TRANSISTOR
Features
Mechanical Data
•
•
•
•
•
Ultra-Small Leadless Surface Mount Package
Complementary NPN Type Available (2DC4617QLP)
“Lead Free”, RoHS Compliant (Note 1)
Halogen and Antimony Free, "Green" Device (Note 2)
Qualified to AEC-Q101 Standards for High Reliability
•
•
Case: DFN1006-3
Case Material: Molded Plastic, "Green" Molding Compound.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Terminals: Finish ⎯ NiPdAu over Copper leadframe. Solderable
per MIL-STD-202, Method 208
•
•
•
Weight: 0.0008 grams (approximate)
C
DFN1006-3
B
C
E
B
E
Bottom View
Device Symbol
Top View
Device Schematic
Ordering Information (Note 3)
Product
2DA1774QLP-7
2DA1774QLP-7B
Marking
Reel size (inches)
Tape width (mm)
Quantity per reel
3,000
8A
8A
7
7
8
8
10,000
Notes:
1. No purposefully added lead.
2. Diodes Inc.'s "Green" policy can be found on our website at http://www.diodes.com.
3. For packaging details, go to our website at http://www.diodes.com.
Marking Information
2DA1774QLP-7
2DA1774QLP-7B
8A = Product Type Marking Code
8A
8A
Top View
Top View
Dot Denotes Collector Side
Bar Denotes Base and Emitter Side
1 of 4
www.diodes.com
January 2011
© Diodes Incorporated
2DA1774QLP
Document number: DS31438 Rev. 4 - 2
2DA1774QLP
Maximum Ratings @TA = 25°C unless otherwise specified
Characteristic
Collector-Base Voltage
Symbol
VCBO
VCEO
VEBO
IC
Value
-50
Unit
V
Collector-Emitter Voltage
Emitter-Base Voltage
-40
V
-5.0
-100
-200
V
Collector Current - Continuous
Peak Collector Current
mA
mA
ICM
Thermal Characteristics
Characteristic
Symbol
Value
250
Unit
mW
°C/W
°C
Power Dissipation @TA = 25°C (Note 4)
PD
500
Thermal Resistance, Junction to Ambient @TA = 25°C (Note 4)
Operating and Storage Temperature Range
Rθ
JA
-55 to +150
TJ, TSTG
Electrical Characteristics @TA = 25°C unless otherwise specified
Characteristic
OFF CHARACTERISTICS (Note 5)
Collector-Base Breakdown Voltage
Symbol
Min
Max
Unit
Test Condition
-50
-40
-5.0
V
V
V
V(BR)CBO
V(BR)CEO
V(BR)EBO
⎯
⎯
⎯
-100
-5
IC = -50μA, IE = 0
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
IC = -1mA, IB = 0
IE = -50μA, IC = 0
VCB = -30V
VCB = -30V, TA = 150°C
VEB = -4.0V
nA
μA
nA
Collector Cutoff Current
ICBO
IEBO
⎯
⎯
Emitter Cutoff Current
-100
ON CHARACTERISTICS (Note 5)
DC Current Gain
120
270
-0.2
hFE
⎯
V
VCE = -6.0V, IC = -1.0mA
IC = -50mA, IB = -5.0mA
Collector-Emitter Saturation Voltage
SMALL SIGNAL CHARACTERISTICS
Output Capacitance
VCE(SAT)
⎯
5.0
pF
Cobo
fT
⎯
VCB = -12V, f = 1.0MHz, IE = 0
V
CE = -12V, IC = -2.0mA,
Current Gain-Bandwidth Product
100
MHz
⎯
f = 100MHz
Notes:
4. Part mounted on FR-4 PCB with recommended pad layout, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.
5. Short duration pulse test used to minimize self-heating effect.
300
100
80
I
= -0.5mA
= -0.4mA
B
250
I
B
200
150
I
= -0.3mA
= -0.2mA
60
40
B
I
B
100
I
= -0.1mA
B
20
0
50
0
R
= 500 °C/W
θ
JA
0
1
2
3
4
5
0
25
50
75
100
125
150
-VCE, COLLECTOR-EMITTER VOLTAGE (V)
Fig. 2 Typical Collector Current
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Power Derating Curve
vs. Collector-Emitter Voltage
2 of 4
www.diodes.com
January 2011
© Diodes Incorporated
2DA1774QLP
Document number: DS31438 Rev. 4 - 2
2DA1774QLP
0.5
0.4
300
I
/I = 10
B
C
0.3
0.2
200
100
0
T
= 150ºC
A
T
= 85ºC
A
0.1
0
T
= 25ºC
A
T
= -55ºC
A
0.1
1
10
100
1,000
0.1
1
10
100
1,000
-IC, COLLECTOR CURRENT (mA)
-IC, COLLECTOR CURRENT (mA)
Fig. 4 Typical Collector-Emitter Saturation Voltage
vs. Collector Current
Fig. 3 Typical DC Current Gain
vs. Collector Current
1.2
1.0
1.2
1.0
0.8
0.8
0.6
T
= -55°C
A
A
0.6
0.4
T
T
= 25°C
= 85°C
A
0.4
0.2
0
T
= 150°C
A
0.2
0
I
/I = 10
B
C
0.1
1
10
100
1,000
0.1
1
10
100
1,000
-IC, COLLECTOR CURRENT (mA)
-IC, COLLECTOR CURRENT (mA)
Fig. 6 Typical Base-Emitter Saturation Voltage
vs. Collector Current
Fig. 5 Typical Base-Emitter Turn-On Voltage
vs. Collector Current
Package Outline Dimensions
A
DFN1006-3
Dim Min
Max Typ
0.53 0.50
0.05 0.03
0.20 0.15
0.55 0.50
A1
A
A1
b1
b2
D
0.47
0
0.10
0.45
D
0.95 1.075 1.00
0.55 0.675 0.60
b1
E
e
0.35
0.30 0.25
0.30 0.25
⎯
0.20
0.20
⎯
⎯
e
b2
E
L1
L2
L3
0.40
⎯
All Dimensions in mm
L2
L3
L1
3 of 4
www.diodes.com
January 2011
© Diodes Incorporated
2DA1774QLP
Document number: DS31438 Rev. 4 - 2
2DA1774QLP
Suggested Pad Layout
C
X1
Dimensions Value (in mm)
Z
G1
G2
X
X1
Y
1.1
0.3
0.2
0.7
0.25
0.4
0.7
G2
X
G1
Y
C
Z
IMPORTANT NOTICE
DIODES INCORPORATED MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT,
INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE
(AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION).
Diodes Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes
without further notice to this document and any product described herein. Diodes Incorporated does not assume any liability arising out of the
application or use of this document or any product described herein; neither does Diodes Incorporated convey any license under its patent or
trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume
all risks of such use and will agree to hold Diodes Incorporated and all the companies whose products are represented on Diodes Incorporated
website, harmless against all damages.
Diodes Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel.
Should Customers purchase or use Diodes Incorporated products for any unintended or unauthorized application, Customers shall indemnify and
hold Diodes Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or
indirectly, any claim of personal injury or death associated with such unintended or unauthorized application.
Products described herein may be covered by one or more United States, international or foreign patents pending. Product names and markings
noted herein may also be covered by one or more United States, international or foreign trademarks.
LIFE SUPPORT
Diodes Incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express
written approval of the Chief Executive Officer of Diodes Incorporated. As used herein:
A. Life support devices or systems are devices or systems which:
1. are intended to implant into the body, or
2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the
labeling can be reasonably expected to result in significant injury to the user.
B. A critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the
failure of the life support device or to affect its safety or effectiveness.
Customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support devices or systems, and
acknowledge and agree that they are solely responsible for all legal, regulatory and safety-related requirements concerning their products and any
use of Diodes Incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or systems-related
information or support that may be provided by Diodes Incorporated. Further, Customers must fully indemnify Diodes Incorporated and its
representatives against any damages arising out of the use of Diodes Incorporated products in such safety-critical, life support devices or systems.
Copyright © 2011, Diodes Incorporated
www.diodes.com
4 of 4
www.diodes.com
January 2011
© Diodes Incorporated
2DA1774QLP
Document number: DS31438 Rev. 4 - 2
相关型号：
2DA1774S-13
Small Signal Bipolar Transistor, 0.15A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, ULTRA MINIATURE, PLASTIC PACKAGE-3
DIODES
©2020 ICPDF网 联系我们和版权申明