DF005S [DAESAN]
CURRENT 1.0 Ampere VOLTAGE 50 to 1000 Volts; 当前1.0安培电压50到1000伏特
| 型号： | DF005S |
| 厂家： | 
DAESAN ELECTRONICS CORP. |
| 描述： | CURRENT 1.0 Ampere VOLTAGE 50 to 1000 Volts |
| 文件： | 总2页 (文件大小：236K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CURRENT 1.0 Ampere
VOLTAGE 50 to 1000 Volts
DF005S THRU DF10S
Features
· Glass Passivated Die Construction
· Diffused Junction
L
G
· Low Forward Voltage Drop, High Current Capability
· Surge Overload Rating to 50A Peak
· Designed for Surface Mount Application
· Plastic Material - UL Flammability Classification 94V-0
A
B
D E
H
C
DF-S
J
Dim
A
Min
7.40
6.20
0.22
0.076
Max
7.90
6.50
0.30
0.33
10.40
1.53
8.51
2.60
5.20
1.20
K
Mechanical Data
B
C
· Case : Molded Plastic
D
E
· Terminals : Solder Plated Leads,
Solderable per MIL-STD-202, Method 208
· Polarity : As Marked on Case
· Approx Weight : 0.38 grams
· Mounting Position : Any
G
H
J
1.02
8.13
2.40
5.00
1.00
K
· Marking : Type Number
L
All Dimens ions in mm
Maximum Ratings And Electrical Characteristics
(Ratings at 25℃ ambient temperature unless otherwise specified, Single phase, half wave 60Hz, resistive or inductive
load. For capacitive load, derate by 20%)
DF
005S
DF
01S
DF
02S
DF
04S
DF
06S
DF
08S
DF
Symbols
Units
10S
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
V
V
RMM
RWM
50
35
100
70
200
140
400
600
420
800
560
1000
700
Volts
R
RMS Reverse voltage
V
RMS
280
1.0
Volts
Amp
Average Rectified Output Current @ T
A
=40
Io
℃
Non-Repetitive Peak Forward Surge Current,
8.3ms single half-sine-wave superimposed
on rated load (JEDEC method)
IFSM
50
Amp
V
FM
1.1
Volts
Forward Voltage (per element)
@ IF=1.0 A
@ T
A
=25℃
10
Peak Reverse Current at Rated
DC Blocking Voltage (per element)
I
RM
μA
@ TA
=100℃
500
10.4
I2t Rating for Fusing (t<8.3ms)
I2t
A2
S
Typical Junction Capacitance
per element (Note 1)
C
j
25
40
pF
Typical Thermal Resistance,
Junction to Ambient (Note 2)
℃/W
RθJA
T
STG
j
Operating and Storage Temperature Range
-65 to +150
℃
T
Notes:
(1) Measured at 1.0MHz and Applied Reverse Voltage of 4.0V DC.
(2) Thermal Resistance, junction to ambient, measured on PC board with 5.02mm (0.03mm thick) land areas.
RATING AND CHARACTERISTIC CURVES DF005S THRU DF10S
1.0
10
60 Hz Resistive or
Inductive load
Tj = 25°C
Pulse Width = 300µs
2% duty cycle
1.0
0.5
0.1
0.01
0
40
100
120
140
0.8
0.4
1.0
1.4
80
0.6
1.2
60
TA, AMBIENT TEMPERA TURE (°C)
Fig. 1 Output Current Derating Curve
VF, INST ANT ANEOUS FOR WARD VOL TAGE (V)
Fig. 2 Typ Forward Characteristics (per element)
60
100
10
1
Tj = 25°c
Single half-sine-W ave
(JEDEC Method)
f = 1.0 Mhz
Vsig = 50 mV p-p
50
40
30
20
10
0
1
10
100
1
10
100
VR , REVERSE VOL TAGE (V)
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Max Non-Repetitive Peak Forward Sur ge Current
Fig. 4 Typ Junction Capacitance (per element)
100
Tj = 125°C
10
1.0
Tj = 25°C
0.1
0.01
0
20
40
60
100
120
140
80
PERCENT OF RA TED PEAK REVERSE VOL TAGE (%)
Fig. 5 Typ Reverse Characteristics (per element)
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