DF005S-T-F [DIODES]
Bridge Rectifier Diode, 1 Phase, 1A, 50V V(RRM), Silicon, PLASTIC, DF-S, 4 PIN;型号: | DF005S-T-F |
厂家: | DIODES INCORPORATED |
描述: | Bridge Rectifier Diode, 1 Phase, 1A, 50V V(RRM), Silicon, PLASTIC, DF-S, 4 PIN 光电二极管 |
文件: | 总3页 (文件大小:84K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SPICE MODELS: DF005S DF01S DF02S DF04S DF06S DF08S DF10S
DF005S - DF10S
1.0A SURFACE MOUNT GLASS PASSIVATED BRIDGE
RECTIFIER
Features
·
·
·
·
·
·
Glass Passivated Die Construction
Diffused Junction
Low Forward Voltage Drop, High Current Capability
Surge Overload Rating to 50A Peak
DF-S
Min
Dim
A
Max
7.90
6.50
0.30
0.33
10.40
1.53
8.51
2.60
5.20
1.20
Designed for Surface Mount Application
7.40
6.20
0.22
0.076
—
L
G
UL Listed Under Recognized Component Index, File
Number E94661
B
C
·
Lead Free Finish, RoHS Compliant (Note 3)
D
A B
D E
E
Mechanical Data
·
G
H
1.02
8.13
2.40
5.00
1.00
Case: DF-S
·
Case Material: Molded Plastic. UL Flammability
Classification Rating 94V-0
H
C
J
·
·
Moisture Sensitivity: Level 1 per J-STD-020C
J
K
Terminals: Finish - Matte Tin. Solderable per
MIL-STD-202, Method 208
L
K
All Dimensions in mm
·
·
·
Polarity: As marked on Case
Marking: Type Number, See Page 3
Weight: 0.38 grams (approximate)
@ TA = 25°C unless otherwise specified
Maximum Ratings and Electrical Characteristics
Single phase, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
DF
DF
DF
DF
DF
DF
DF
Characteristic
Symbol
Unit
005S
01S
100
70
02S
04S
06S
08S
10S
VRMM
VRWM
VR
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
50
200
140
400
600
420
800
560
1000
700
V
VRMS
IO
RMS Reverse Voltage
35
280
1.0
V
A
Average Forward Rectified Current
@ TA = 40°C
Non-Repetitive Peak Forward Surge Current, 8.3 ms
single half-sine-wave superimposed on rated load
(JEDEC method)
IFSM
50
A
Forward Voltage (per element)
@ IF = 1.0A
VFM
IRM
1.1
V
Peak Reverse Current at Rated
DC Blocking Voltage (per element)
@ TA 25°C
=
10
500
µA
@ TA = 125°C
I2t Rating for Fusing (t<8.3ms)
I2t
10.4
25
A2s
pF
CT
Typical Total Capacitance (per element) (Note 1)
Typical Thermal Resistance, Junction to Ambient
(Note 2)
RqJA
40
°C/W
°C
Tj, TSTG
Operating and Storage Temperature Range
-65 to +150
Notes: 1. Measured at 1.0 MHz and Applied Reverse Voltage of 4.0V DC.
2. Thermal resistance, junction to ambient, measured on PC board with 5.0mm (0.03mm thick) land areas.
3. RoHS revision 13.2.2003. Glass and High Temperature Solder Exemptions Applied, see EU Directive Annex Notes 5 and 7.
2
DS17001 Rev. 10 - 2
1 of 3
DF005S-DF10S
www.diodes.com
ã Diodes Incorporated
1.0
10
60 Hz Resistive or
Inductive load
1.0
0.5
0.1
0.01
0
40
100
120
140
0.4
0.8
1.0
1.2
1.4
80
0.6
60
TA, AMBIENT TEMPERATURE (°C)
Fig. 1 Output Current Derating Curve
VF, INSTANTANEOUS FORWARD VOLTAGE (V)
Fig. 2 Typ Forward Characteristics (per element)
60
100
10
1
Tj = 25°c
Single half-sine-Wave
(JEDEC Method)
f = 1.0 Mhz
= 50 mV p-p
V
sig
50
40
30
20
10
0
1
10
100
1
10
100
VR, REVERSE VOLTAGE (V)
Fig. 4 Typ Junction Capacitance (per element)
NUMBER OF CYCLES AT 60 Hz
Fig. 3 Max Non-Repetitive Peak Forward Surge Current
100
Tj = 125°C
10
1.0
Tj = 25°C
0.1
0.01
0
20
40
60
100
120
140
80
PERCENT OF RATED PEAK REVERSE VOLTAGE (%)
Fig. 5 Typ Reverse Characteristics (per element)
DS17001 Rev. 10 - 2
2 of 3
DF005S-DF10S
www.diodes.com
(Notes 4 & 5)
Ordering Information
Device*
Packaging
Shipping
DFxS
DFxS-T
DF-S
DF-S
50 Per Tube
1500/Tape & Reel, 13-inch
* x = Device type, e.g. DF005S or DF10S, etc.
Notes: 4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.
Marking Information
= Manufacturers’ code marking
DFxxxS = Product type marking code, ex: DF10S
YWW = Date code marking
Y = Last digit of year ex: 2 for 2002
WW = Week code 01 to 52
DFxxxS
XXXX
DS17001 Rev. 10 - 2
3 of 3
DF005S-DF10S
www.diodes.com
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