DF005S1 [ONSEMI]
桥式整流器;型号: | DF005S1 |
厂家: | ONSEMI |
描述: | 桥式整流器 光电二极管 |
文件: | 总6页 (文件大小:175K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
DATA SHEET
www.onsemi.com
Bridge Rectifier
DF005S1-DF10S1
Description
With the ever−pressing need to improve power supply efficiency,
improve surge rating, improve reliability, and reduce size, the DFxS1
family sets a new standard in performance and cost saving.
The DFxS1 family balances performance against cost. The design
offers a moderate surge rating of 35 A required to handle inrush surge
and maintain good reliability, with fair price.
The DFxS1 achieves good performance in a SDIP surface mount
form factor, reducing board space and volumetric requirements vs.
competitive devices.
PDIP4 GW
CASE 709AE
̃
̃
IN
+
OUT
−
Features
w Maximum Surge Rating:
MARKING DIAGRAM
I
= 35 A
FSM
2
2
I t = 5.1 A Sec
w Optimized V : Typical 0.95 V at 1 A, 25C
F
w DF10S Socket Compatible
w Glass Passivated Junctions
$YZYWW
XXXXX
w Lead Free Compliant to EU RoHS 2002/95/EU Directives
w Green Molding Compound: IEC61249
w Qualified with IR Reflow and Wave Soldering
$Y
Z
= onsemi Logo
= Assemlby Plant Code
YWW = Date Code (Year and Week)
XXXXX = Specific Device Code
ORDERING INFORMATION
See detailed ordering and shipping information on page 4
of this data sheet.
1
Publication Order Number:
Semiconductor Components Industries, LLC, 2014
DF10S1/D
December, 2022 − Rev. 2
DF005S1−DF10S1
ABSOLUTE MAXIMUM RATINGS (Values are at T = 25C unless otherwise noted.)
A
Value
DF005S1 DF01S1 DF02S1 DF04S1 DF06S1 DF08S1 DF10S1
Symbol
Parameter
Unit
V
Maximum Recurrent Peak
Reverse Voltage
50
35
50
100
200
140
200
400
600
420
600
800
560
800
1000
V
RRM
V
Maximum RMS Bridge Input
Voltage
70
280
700
V
RMS
V
Maximum DC Blocking Voltage
Maximum Average Forward
100
400
1.0
1000
V
A
DC
I
F(AV)
Current T = 40_C
Peak Forward Surge Current
8.3 ms Single Half−Sine Wave
Superimposed on Rated Load
(JEDEC Method)
A
I
35
A
FSM
T
Storage Temperature Range
−55 to +150
−55 to +150
C
C
STG
T
J
Operating Junction
Temperature Range
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS (Note 1)
Symbol
Parameter
Conditions
Max.
Unit
R
Thermal Resistance, Junction to Ambient
Single−Die Measurement
(Maximum Land Pattern: 13 13 mm)
65
C/W
q
JA
Multi−Die Measurement
50
105
27
(Maximum Land Pattern: 13 13 mm)
Multi−Die Measurement
(Minimum Land Pattern: 1.3 1.5 mm)
Y
JL
Thermal Characterization Parameter,
Junction to Lead
Single−Die Measurement
(Maximum and Minimum Land Pattern)
C/W
1. The thermal resistances (R
& Y ) are characterized with the device mounted on the following FR4 printed circuit boards, as shown in
JL
q
JA
Figure 1 and Figure 2. PCB size: 76.2 114.3 mm.
Heating effect from adjacent dice is considered and only two dices are powered at the same time.
F
S
F
S
S
S
F
F
Figure 1. Maximum Pads of 2 oz Copper
Figure 2. Minimum Pads of 2 oz Copper
ELECTRICAL CHARACTERISTICS (Values are at T = 25C unless otherwise noted.)
A
Symbol
Parameter
Conditions
I = 1.0 A
Min
Typ
Max
1.1
3
Unit
V
V
F
Forward Voltage Drop per Bridge Element
F
I
R
DC Reverse Current
T = 25C
J
mA
at Rated DC Blocking Voltage
T = 125C
500
5.1
J
2
2
I t
Rating for Fusing (t < 8.3 ms)
Junction Capacitance
A S
C
V
R
= 4.0 V, f = 1.0 MHz
10
pF
J
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
www.onsemi.com
2
DF005S1−DF10S1
TYPICAL PERFORMANCE CHARACTERISTICS
10
100
T = 150C
J
10
1
T = 125C
J
1
T = 150C
J
0.1
T = 125C
J
T = 25C
J
0.1
T = 25C
0.01
0.001
0.0001
J
T = −55C
J
T = −55C
J
0.01
0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3
0
50
100 150 200 250 300 350 400
V , Reverse Voltage (V)
V , Forward Voltage Drop (V)
F
R
Figure 3. Typical Instantaneous Forward
Characteristics
Figure 4. Typical Reverse Characteristics
1.0
0.8
0.6
0.4
0.2
0.0
40
30
Max Pad (Single Die)
20
10
0
60
80
100
120
140
160
180
200
0
20
40
60
80
100
Ambient Temperature (5C)
Number of Cycles at 60 Hz
Figure 5. Maximum Average Current vs. Ambient
Temperature
Figure 6. Peak Forward Surge Current vs.
Number of Cycles at 60 Hz
16
f = 1 MHz
14
12
10
8
6
4
2
0
0
10
20
30
40
50
V , Reverse Voltage (V)
R
Figure 7. Typical Junction Capacitance
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3
DF005S1−DF10S1
ORDERING INFORMATION
Part Number
DF005S1
†
Top Mark
Package
Shipping
DF005S1
DF01S1
DF02S1
DF04S1
DF06S1
DF08S1
DF10S1
PDIP4 GW
(Pb−Free, Halide Free)
1500 / Tape & Reel
DF01S1
DF02S1
DF04S1
DF06S1
DF08S1
DF10S1
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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4
MECHANICAL CASE OUTLINE
PACKAGE DIMENSIONS
PDIP4 GW
CASE 709AE
ISSUE O
DATE 31 JUL 2016
5.200
5.000
1.30
4
3
1.50
PIN1 ID
OPTIONAL
10.300
9.400
6.500
6.200
10.40
1
2
1.200
0.890
5.10
TOP VIEW
LAND PATTERN RECOMMENDATION
8.510
8.050
7.874
7.370
CHAMFER
OPTIONAL
2.60
2.20
0.330
0.220
0.330
0.076
1.530
1.020
1.12
SIDE VIEW
END VIEW
NOTES:
A. THIS PACKAGE DOES NOT CONFORM TO
ANY REFERENCE STANDARD.
B. ALL DIMENSIONS ARE IN MILLIMETERS.
C. DIMENSIONS ARE EXCLUSIVE OF BURRS,
MOLD FLASH AND TIE BAR PROTRUSIONS.
Electronic versions are uncontrolled except when accessed directly from the Document Repository.
Printed versions are uncontrolled except when stamped “CONTROLLED COPY” in red.
DOCUMENT NUMBER:
DESCRIPTION:
98AON13473G
PDIP4 GW
PAGE 1 OF 1
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© Semiconductor Components Industries, LLC, 2016
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TECHNICAL PUBLICATIONS:
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