DAP202S3 [CYSTEKEC]
High-speed double diode; 高速双二极管
| 型号： | DAP202S3 |
| 厂家： | 
CYSTECH ELECTONICS CORP. |
| 描述： | High-speed double diode |
| 文件： | 总4页 (文件大小：174K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Spec. No. : C303S3P
Issued Date : 2004.05.31
Revised Date
CYStech Electronics Corp.
Page No. : 1/4
High –speed double diode
DAP202S3
Description
The DAP202S3 consists of two high-speed switching diodes with common anodes, fabricated in planar
technology, and encapsulated in a small SOT-323 plastic SMD package.
Equivalent Circuit
Outline
DAP202S3
SOT-323
Common Anode
1
2
3
Cathode
1：Cathode
2：Cathode
Cathode
3：Common Anode
Features
• Small plastic SMD package
• High switching speed: max. 4ns
• Continuous reverse voltage: max. 75V
• Repetitive peak reverse voltage: max. 85V
• Repetitive peak forward current: max. 450mA.
Applications
• High-speed switching in thick and thin-film circuits.
DAP202S3
CYStek Product Specification
Spec. No. : C303S3P
Issued Date : 2004.05.31
Revised Date
CYStech Electronics Corp.
Page No. : 2/4
Absolute Maximum Ratings @TA=25℃
Parameters
Repetitive peak reverse voltage
Continuous reverse voltage
Continuous forward current(single diode loaded)
Continuous forward current(double diode loaded)
Repetitive peak forward current
Non-repetitive peak forward current
@square wave, Tj=125℃ prior to surge t=1µs
t=1ms
Symbol
VRRM
VR
Min
Max
85
Unit
V
-
-
-
-
75
V
215
125
450
IF
mA
mA
IFRM
-
-
-
4
1
A
A
IFSM
0.5
200
150
+150
A
t=1s
Total power dissipation(Note 1)
Junction Temperature
Ptot
Tj
Tstg
mW
°C
°C
-
Storage Temperature
-65
Note 1: Device mounted on an FR-4 PCB.
Electrical Characteristics @ Tj=25℃ unless otherwise specified
Parameters
Symbol
Conditions
Min Typ. Max Unit
IF=1mA
715 mV
IF=10mA
855 mV
Forward voltage
VF
-
-
-
-
IF=50mA
1
V
V
nA
µA
µA
µA
IF=150mA
VR=25V
1.25
30
VR=75V
1
Reverse current
IR
VR=25V,Tj=150℃
30
50
VR=75V,Tj=150℃
Diode capacitance
Cd
trr
VR=0V, f=1MHz
-
-
-
-
2
pF
when switched from IF=10mA to
IR=10mA,RL=100Ω, measured
at IR=1mA
when switched from IF=10mA
tr=20ns
Reverse recovery time
4
ns
Forward recovery voltage
Vfr
-
-
1.75
V
Thermal Characteristics
Symbol
Rth, j-a
Parameter
thermal resistance from junction to ambient
Conditions
Value
625
Unit
Note 1
℃
/W
Note 1: Device mounted on a FR-4 PCB.
DAP202S3
CYStek Product Specification
Spec. No. : C303S3P
Issued Date : 2004.05.31
Revised Date
CYStech Electronics Corp.
Page No. : 3/4
Characteristic Curves
Forward Current vs Forward Voltage
Forward Current vs Ambient Temperature
275
250
225
200
175
150
125
100
75
250
225
200
175
150
125
100
75
single diode loaded
double diode loaded
50
50
25
25
0
0
0
0.2 0.4 0.6 0.8
1
1.2 1.4
0
50
100
150
200
Ambient Temperature---Ta(℃)
Forward Voltage---VF(V)
Non-repetitive peak forward
current vs pulse duration
Diode Capacitance vs Reverse Voltage
100
10
1
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
0.1
1
10
100
1000
10000
0
2
4
6
8
10 12 14 16
Pulse Duration---tp(μs)
Reverse Voltage---VR(V)
DAP202S3
CYStek Product Specification
Spec. No. : C303S3P
Issued Date : 2004.05.31
Revised Date
CYStech Electronics Corp.
Page No. : 4/4
SOT-323 Dimension
3
Marking:
A
Q
C
A1
Lp
A1
1
2
detail Z
bp
e1
W
B
e
A
E
Z
D
3-Lead SOT-323 Plastic
Surface Mounted Package
CYStek Package Code: S3
θ
v
A
He
Style : Pin 1. Cathode 2.Cathode
3. Common Anode
mm
2
0
1
scale
*: Typical
Inches
Min. Max.
Millimeters
Inches
Millimeters
DIM
DIM
Min.
0.80
0.00
0.30
0.10
1.80
1.15
1.3
Max.
1.10
0.10
0.40
0.25
2.20
1.35
-
Min.
0.0256
Max.
-
Min.
0.65
2.00
0.15
0.13
0.2
Max.
-
2.25
0.45
0.23
-
A
A1
bp
C
D
E
0.0315 0.0433
0.0000 0.0039
0.0118 0.0157
0.0039 0.0098
0.0709 0.0866
0.0453 0.0531
e1
He
Lp
Q
v
w
0.0787 0.0886
0.0059 0.0177
0.0051 0.0091
0.0079
0.0079
-
-
-
0.2
-
e
0.0512
-
-
θ
10°
0°
Notes: 1.Controlling dimension: millimeters.
2.Maximum lead thickness includes lead finish thickness, and minimum lead thickness is the minimum thickness of base material.
3.If there is any question with packing specification or packing method, please contact your local CYStek sales office.
Material:
• Lead: 42 Alloy ; solder plating
• Mold Compound: Epoxy resin family, flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of CYStek.
• CYStek reserves the right to make changes to its products without notice.
• CYStek semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• CYStek assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
DAP202S3
CYStek Product Specification
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