DAP202U [ROHM]
Switching diode; 开关二极管
| 型号： | DAP202U |
| 厂家： | 
ROHM |
| 描述： | Switching diode |
| 文件： | 总4页 (文件大小：57K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DA227/DAN202K/DAN202U/DAN222
DAP202K/DAP202U/DAP222
Diodes
Switching diode
DA227
DAN202K / DAN202U / DAN222
DAP202K / DAP202U / DAP222
zExternal dimensions (Units : mm)
zApplication
Ultra high speed switching
DAN202K / DAP202K
DAN202U / DAP202U
zFeatures
2.9±0.2
1.9±0.2
+0.2
-0.1
1.1
2.0±0.2
1.3±0.1
1) Four types of packaging are
available.
0.9±0.1
0.95 0.95
0.8±0.1
0.3
0.6
0.65 0.65
2) High speed. (trr=1.5ns Typ.)
3) Suitable for high packing density
layout.
0~0.1
0~0.1
+0.1
-0.06
4) High reliability.
+0.1
-0.05
0.15
0.4
0.15±0.05
(All pins have the same dimensions)
0.3±0.1
(All pins have the same dimensions)
ROHM : SMD3
EIAJ : SC - 59
JEDEC : SOT - 346
ROHM : UMD3
EIAJ : SC - 70
JEDEC : SOT - 323
zConstruction
Silicon epitaxial planar
DAN222 / DAP222
DA227
zMarking
1.25±0.1
0.6 0.65
DAN222
DAN202U
DAN202K
0.3±0.1 0.2±0.1
0.9±0.1
0.7
N
P
1.6±0.2
1.0±0.1
0.7±0.1
+0.1
-0.05
+0.1
-0.05
DAP222
DAP202U
DAP202K
0.5 0.5
0.2
0.2
0.55±0.1
0~0.1
0~0.1
0.2±0.1 0.2±0.1
0.65 0.65
DA227
N20
+0.1
0.15±0.05
0.3
-0.05
0.15±0.05
1.3±0.1
2.0±0.2
ROHM : UMD4
EIAJ : SC - 82
ROHM : EMD3
EIAJ : SC - 75
JEDEC : SOT - 343
JEDEC : SOT - 416
DA227/DAN202K/DAN202U/DAN222
DAP202K/DAP202U/DAP222
Diodes
zCircuits
DAN202K
DAN202U
DAN222
DAP202K
DAP202U
DAP222
DA227
zAbsolute maximum ratings (Ta=25°C)
Power
dissipation
(TOTAL)
Junction
temperature
Tj (ºC)
Storage
temperature
Tstg (ºC)
Peak reverse DC reverse Peak forward Mean rectifying Surge current
P / N
Type
voltage
voltage
current
current
(1µs)
Type
VRM (V)
V
R
(V)
I
FM (mA)
I
O
(mA)
I
surge (A)
Pd(mW)
−55~+150
−55~+150
−55~+150
−55~+150
−55~+150
−55~+150
−55~+150
DAN202K
DAP202K
DAN202U
DAP202U
DAN222
DAP222
DA227
80
80
80
80
80
80
80
80
300
300
300
300
300
300
300
100
100
100
100
100
100
100
4
4
4
4
4
4
4
200
200
200
200
150
150
150
150
150
150
150
150
150
150
N
P
N
P
N
P
N
80
80
80
80
80
80
zElectrical characteristics (Ta=25°C)
Forward voltage
Cond.
Reverse current Capacitance between terminals
Reverse recovery time
Type
Cond.
(V)
Cond.
Cond.
(ns)
V
F
(V)
I
R
(
µA
)
C
Max.
T
(
pF
)
t
rr
Max.
Max.
Max.
I
F
(
mA
)
V
R
V
R
(V) f (MHz)
V
R
(V)
I
F
(
5
5
5
5
5
5
5
mA)
DAN202K
DAP202K
DAN202U
DAP202U
DAN222
DAP222
DA227
1.2
1.2
1.2
1.2
1.2
1.2
1.2
100
100
100
100
100
100
100
0.1
0.1
0.1
0.1
0.1
0.1
0.1
70
70
70
70
70
70
70
3.5
3.5
3.5
3.5
3.5
3.5
3.5
6
1
1
1
1
1
1
1
4
4
4
4
4
4
4
6
6
6
6
6
6
6
6
6
6
6
6
6
DA227/DAN202K/DAN202U/DAN222
DAP202K/DAP202U/DAP222
Diodes
zElectrical characteristic curves (Ta=25°C)
125
1000
50
Ta=100ºC
20
100
75ºC
100
10
1
10
50ºC
25ºC
5
75
Ta=85ºC
50ºC
25ºC
2
0ºC
50
0ºC
1
0.5
−25ºC
−30ºC
25
0.1
0.2
0
0.1
0.010
10
REVERSE VOLTAGE : V
20
30
40
V)
50
0
25
50
75
100
125
150
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
AMBIENT TEMPERATURE :Ta (ºC)
FORWARD VOLTAGE : VF (V)
R
(
Fig.1 Power attenuation curve
Fig.2 Forward characteristics
(P Type)
Fig.3 Reverse characteristics
(P Type)
50
1000
100
10
Ta=100°C
f=1MHz
20
10
5
4
2
75°C
50°C
Ta=85ºC
50ºC
25ºC
25°C
2
1
0°C
1
0ºC
P Type
N Type
−30ºC
0.5
−25°C
0.1
0.2
0.1
0
0
0.01
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
0
10 20 30 40 50 60 70 80
2
4
6
8
10 12 14 16 18 20
FORWARD VOLTAGE : V
F
(V)
REVERSE VOLTAGE : V V)
R
(
REVERSE VOLTAGE : V
R (V)
Fig.4 Forward characteristics
(N Type)
Fig.6 Capacitance between
terminals characteristics
Fig.5 Reverse characteristics
(N Type)
0.01µF
D.U.T.
10
9
8
7
6
5
4
3
2
1
0
VR=6V
5Ω
PULSE GENERATOR
SAMPLING
OSCILLOSCOPE
50Ω
OUTPUT 50Ω
INPUT
100ns
0
1
2
3
4
5
6
7
8
9
10
FORWARD CURRENT : I
F
(mA)
OUTPUT
t
rr
Fig.7 Reverse recovery time
0
Fig.8 Reverse recovery time (trr) measurement circuit
This datasheet has been download from:
www.datasheetcatalog.com
Datasheets for electronics components.
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