DAP202UG [ONSEMI]
Common Anode Silicon Dual Switching Diodes; 共阳极硅双开关二极管
| 型号： | DAP202UG |
| 厂家： | 
ONSEMI |
| 描述： | Common Anode Silicon Dual Switching Diodes |
| 文件： | 总5页 (文件大小：59K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DAP222, DAP202U
Preferred Device
Common Anode Silicon
Dual Switching Diodes
These Common Anode Silicon Epitaxial Planar Dual Diodes are
designed for use in ultra high speed switching applications. The
DAP222 device is housed in the SC−75/SOT−416 package which is
designed for low power surface mount applications, where board
space is at a premium. The DAP202U device is housed in the
SC−70/SOT−323package.
http://onsemi.com
ANODE
3
Features
• Fast t
rr
• Low C
D
• Pb−Free Packages are Available
1
2
CATHODE
MARKING
DIAGRAMS
MAXIMUM RATINGS (T = 25°C)
A
Rating
Reverse Voltage
Symbol
Value
80
Unit
Vdc
3
SC−75
CASE 463
STYLE 4
V
P9 M G
R
G
Peak Reverse Voltage
Forward Current
V
80
Vdc
RM
2
1
1
I
100
300
2.0
mAdc
mAdc
Adc
F
Peak Forward Current
Peak Forward Surge Current
I
FM
3
I
(1)
SC−70
CASE 419
NB M G
FSM
G
1
THERMAL CHARACTERISTICS
Rating
1
2
Symbol
Max
150
Unit
mW
°C
P9, NB = Device Codes
Power Dissipation
P
D
M
G
= Date Code*
= Pb−Free Package
(Note: Microdot may be in either location)
Junction Temperature
Storage Temperature
T
150
J
T
stg
−55 ~ +150
°C
*Date Code orientation and/or orientation may
vary depending upon manufacturing location.
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
ORDERING INFORMATION
†
Device
Package
Shipping
DAP222
SC−75
3000 / Tape & Reel
3000 / Tape & Reel
DAP222G
SC−75
(Pb−Free)
DAP202U
SC−70
3000 / Tape & Reel
3000 / Tape & Reel
DAP202UG
SC−70
(Pb−Free)
DAP222T1
SC−75
3000 / Tape & Reel
3000 / Tape & Reel
DAP222T1G
SC−75
(Pb−Free)
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
Preferred devices are recommended choices for future use
and best overall value.
©
Semiconductor Components Industries, LLC, 2005
1
Publication Order Number:
October, 2005 − Rev. 5
DAP222/D
DAP222, DAP202U
ELECTRICAL CHARACTERISTICS (T = 25°C)
A
Characteristic
Reverse Voltage Leakage Current
Forward Voltage
Symbol
Condition
Min
−
Max
0.1
1.2
−
Unit
mAdc
Vdc
Vdc
pF
I
V = 70 V
R
R
V
I
= 100 mA
F
−
F
Reverse Breakdown Voltage
Diode Capacitance
V
I
= 100 mA
R
80
−
R
C
D
V
= 6.0 V, f = 1.0 MHz
R
3.5
Reverse Recovery Time
DAP222
DAP202U
t (2)
t (3)
tt
I
= 5.0 mA, V = 6.0 V, R = 100 W, I = 0.1 I
R
= 5.0 mA, V = 6.0 V, R = 50 W, I = 0.1 I
R L rr R
−
−
4.0
10.0
ns
rr
F
R
L
rr
I
F
1. t = 1 mS
2. t Test Circuit for DAP222 in Figure 4.
rr
3. trr Test Circuit for DAP202U in Figure 5.
TYPICAL ELECTRICAL CHARACTERISTICS
10
100
10
T
= 150°C
= 125°C
A
T
A
= 85°C
T
A
1.0
T
A
= −ꢀ40°C
T
A
= 85°C
0.1
0.01
T
= 55°C
1.0
0.1
A
T
A
= 25°C
T
A
= 25°C
0.001
50
0.2
0.4
0.6
0.8
1.0
1.2
0
10
20
30
40
V , FORWARD VOLTAGE (VOLTS)
F
V , REVERSE VOLTAGE (VOLTS)
R
Figure 1. Forward Voltage
Figure 2. Reverse Current
1.75
1.5
1.25
1.0
0.75
0
2
4
6
8
V , REVERSE VOLTAGE (VOLTS)
R
Figure 3. Diode Capacitance
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2
DAP222, DAP202U
t
r
t
p
t
rr
I
F
t
t
10%
R
I
rr
= 0.1 I
R
L
A
90%
I
= 5.0 mA
F
V
= 6 V
R
V
R
R = 100 W
L
t = 2 ms
p
t = 0.35 ns
r
INPUT PULSE
OUTPUT PULSE
RECOVERY TIME EQUIVALENT TEST CIRCUIT
Figure 4. Reverse Recovery Time Test Circuit for the DAP222
t
r
t
p
t
rr
I
F
t
t
10%
R
I
rr
= 0.1 I
R
L
A
90%
I
= 5.0 mA
F
V
= 6 V
R
V
R
R = 100 W
L
t = 2 ms
p
t = 0.35 ns
r
INPUT PULSE
OUTPUT PULSE
RECOVERY TIME EQUIVALENT TEST CIRCUIT
Figure 5. Reverse Recovery Time Test Circuit for the DAP202U
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3
DAP222, DAP202U
PACKAGE DIMENSIONS
SC−75 (SOT−416)
CASE 463−01
ISSUE F
NOTES:
−E−
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: MILLIMETER.
2
MILLIMETERS
DIM MIN NOM MAX MIN
0.70
A1 0.00
INCHES
NOM MAX
3
e
−D−
A
0.80
0.05
0.90 0.027 0.031 0.035
0.10 0.000 0.002 0.004
0.30 0.006 0.008 0.012
0.25 0.004 0.006 0.010
1.65 0.059 0.063 0.067
0.90 0.027 0.031 0.035
0.04 BSC
1
b 3 PL
0.20 (0.008)
b
C
D
E
e
0.15
0.10
1.55
0.70
0.20
0.15
1.60
0.80
1.00 BSC
0.15
1.60
M
D
H
0.20 (0.008) E
E
L
0.10
1.50
0.20 0.004 0.006 0.008
1.70 0.061 0.063 0.065
H
E
C
STYLE 4:
A
PIN 1. CATHODE
2. CATHODE
3. ANODE
L
A1
SOLDERING FOOTPRINT*
0.356
0.014
1.803
0.071
0.787
0.031
0.508
0.020
1.000
0.039
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
4
DAP222, DAP202U
PACKAGE DIMENSIONS
SC−70 (SOT−323)
CASE 419−04
ISSUE M
D
NOTES:
e1
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
3
MILLIMETERS
INCHES
NOM
0.035
0.002
0.028 REF
0.014
0.007
0.083
0.049
0.051
E
H
E
DIM
A
A1
A2
b
c
D
E
e
MIN
0.80
0.00
NOM
0.90
0.05
MAX
1.00
0.10
MIN
0.032
0.000
MAX
0.040
0.004
1
2
0.7 REF
0.35
0.18
2.10
1.24
0.30
0.10
1.80
1.15
1.20
0.40
0.25
2.20
1.35
1.40
0.012
0.004
0.071
0.045
0.047
0.016
0.010
0.087
0.053
0.055
b
e
1.30
0.65 BSC
0.425 REF
2.10
0.026 BSC
0.017 REF
0.083
e1
L
c
H
2.00
2.40
0.079
0.095
E
A2
A
0.05 (0.002)
L
A1
SOLDERING FOOTPRINT*
0.65
0.025
0.65
0.025
1.9
0.075
0.9
0.035
0.7
0.028
mm
inches
ǒ
Ǔ
SCALE 10:1
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
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DAP222/D
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