CY7C1020-15VCT [CYPRESS]

Standard SRAM, 32KX16, 15ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, SOJ-44;
CY7C1020-15VCT
型号: CY7C1020-15VCT
厂家: CYPRESS    CYPRESS
描述:

Standard SRAM, 32KX16, 15ns, CMOS, PDSO44, 0.400 INCH, PLASTIC, SOJ-44

静态存储器 光电二极管 内存集成电路
文件: 总10页 (文件大小:186K)
中文:  中文翻译
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020CY7C10  
CY7C1020  
32K x 16 Static RAM  
(BLE) is LOW, then data from I/O pins (I/O1 through I/O8), is  
written into the location specified on the address pins (A0  
through A14). If Byte High Enable (BHE) is LOW, then data  
from I/O pins (I/O9 through I/O16) is written into the location  
specified on the address pins (A0 through A14).  
Features  
• 5.0V operation (± 10%)  
• High speed  
— tAA = 10 ns  
Reading from the device is accomplished by taking Chip En-  
able (CE) and Output Enable (OE) LOW while forcing the Write  
Enable (WE) HIGH. If Byte Low Enable (BLE) is LOW, then  
data from the memory location specified by the address pins  
will appear on I/O1 to I/O8. If Byte High Enable (BHE) is LOW,  
then data from memory will appear on I/O9 to I/O16. See the  
truth table at the back of this data sheet for a complete descrip-  
tion of read and write modes.  
• Low active power  
— 825 mW (max., 10 ns, “L” version)  
• Very Low standby power  
— 550 µW (max., “L” version)  
• Automatic power-down when deselected  
• Independent Control of Upper and Lower bytes  
• Available in 44-pin TSOP II and 400-mil SOJ  
The input/output pins (I/O1 through I/O16) are placed in a  
high-impedance state when the device is deselected (CE  
HIGH), the outputs are disabled (OE HIGH), the BHE and BLE  
are disabled (BHE, BLE HIGH), or during a write operation (CE  
LOW, and WE LOW).  
Functional Description  
The CY7C1020 is a high-performance CMOS static RAM or-  
ganized as 32,768 words by 16 bits. This device has an auto-  
matic power-down feature that significantly reduces power  
consumption when deselected.  
The CY7C1020 is available in standard 44-pin TSOP type II  
and 400-mil-wide SOJ packages.  
Writing to the device is accomplished by taking Chip Enable  
(CE) and Write Enable (WE) inputs LOW. If Byte Low Enable  
Logic Block Diagram  
Pin Configuration  
SOJ / TSOP II  
DATA IN DRIVERS  
Top View  
44  
NC  
1
A
0
43  
42  
41  
40  
39  
38  
A
A
14  
13  
12  
2
3
4
5
6
1
A
A
2
A
A
A
OE  
6
11  
A
BHE  
BLE  
I/O  
I/O  
I/O  
5
CE  
I/O  
I/O  
I/O  
A
A
A
4
3
2
1
32K x 16  
RAM Array  
I/O – I/O  
1
8
7
1
16  
37  
36  
35  
34  
33  
8
2
3
15  
14  
13  
I/O I/O  
9
9
16  
A
A
10  
11  
12  
13  
I/O  
V
I/O  
4
0
V
SS  
CC  
V
V
SS  
CC  
32  
I/O  
I/O  
I/O  
5
6
7
8
12  
11  
I/O  
I/O  
I/O  
31  
30  
29  
28  
14  
15  
16  
I/O  
I/O  
10  
9
COLUMN DECODER  
WE 17  
18  
NC  
27  
26  
25  
A
A
10  
3
BHE  
19  
20  
21  
22  
A
4
A
9
8
7
WE  
CE  
OE  
A
A
5
A
6
A
24  
23  
1020-2  
NC  
NC  
BLE  
1020-1  
Selection Guide  
7C1020-10  
7C1020-12  
7C1020-15  
7C1020-20  
Maximum Access Time (ns)  
10  
180  
150  
3
12  
170  
140  
3
15  
160  
130  
3
20  
160  
130  
3
Maximum Operating Current (mA)  
L
L
Maximum CMOS Standby Current (mA)  
0.1  
0.1  
0.1  
0.1  
Cypress Semiconductor Corporation  
3901 North First Street  
San Jose  
CA 95134  
408-943-2600  
Document #: 38-05058 Rev. **  
Revised August 31, 2001  
CY7C1020  
Current into Outputs (LOW) ........................................ 20 mA  
Maximum Ratings  
Static Discharge Voltage ........................................... >2001V  
(per MIL-STD-883, Method 3015)  
(Above which the useful life may be impaired. For user guide-  
lines, not tested.)  
Latch-Up Current..................................................... >200 mA  
Storage Temperature .................................65°C to +150°C  
Ambient Temperature with  
Power Applied.............................................55°C to +125°C  
Operating Range  
Supply Voltage on VCC to Relative GND[1] .... 0.5V to +7.0V  
Ambient  
Range  
Temperature[2]  
VCC  
DC Voltage Applied to Outputs  
in High Z State[1].....................................0.5V to VCC +0.5V  
Commercial  
0°C to +70°C  
4.5V5.5V  
DC Input Voltage[1] .................................0.5V to VCC +0.5V  
Electrical Characteristics Over the Operating Range  
7C1020-10  
7C1020-12  
7C1020-15  
Parameter  
Description  
Output HIGH Voltage  
Output LOW Voltage  
Input HIGH Voltage  
Input LOW Voltage[1]  
Input Load Current  
Test Conditions  
VCC = Min., IOH = 4.0 mA  
VCC = Min., IOL = 8.0 mA  
Min. Max. Min. Max. Min. Max. Unit  
VOH  
VOL  
VIH  
VIL  
2.4  
2.4  
2.4  
V
V
0.4  
6.0  
0.8  
+1  
0.4  
6.0  
0.8  
+1  
0.4  
6.0  
0.8  
+1  
2.2  
0.5  
1  
2.2  
0.5  
1  
2.2  
0.5  
1  
V
V
IIX  
GND < VI < VCC  
µA  
µA  
IOZ  
Output Leakage  
Current  
GND < VI < VCC  
,
2  
+2  
2  
+2  
2  
+2  
Output Disabled  
ICC  
VCC Operating  
Supply Current  
VCC = Max.,  
IOUT = 0 mA,  
f = fMAX = 1/tRC  
180  
150  
170  
140  
160  
130  
mA  
mA  
L
L
L
ISB1  
Automatic CE  
Power-Down Current  
TTL Inputs  
Max. VCC, CE > VIH  
VIN > VIH or  
VIN < VIL, f = fMAX  
20  
10  
20  
10  
20  
10  
ISB2  
Automatic CE  
Power-Down Current  
CMOS Inputs  
Max. VCC  
,
3
3
3
mA  
CE > VCC 0.3V,  
VIN > VCC 0.3V,  
or VIN < 0.3V, f = 0  
100  
100  
100  
µA  
Notes:  
1. VIL (min.) = 2.0V for pulse durations of less than 20 ns.  
2. A is the case temperature.  
T
Document #: 38-05058 Rev. **  
Page 2 of 10  
CY7C1020  
Electrical Characteristics Over the Operating Range (continued)  
7C1020-20  
Parameter  
VOH  
Description  
Output HIGH Voltage  
Output LOW Voltage  
Input HIGH Voltage  
Input LOW Voltage[1]  
Input Load Current  
Test Conditions  
VCC = Min., IOH = 4.0 mA  
VCC = Min., IOL = 8.0 mA  
Min.  
Max.  
Unit  
V
2.4  
VOL  
VIH  
VIL  
IIX  
0.4  
6.0  
0.8  
+1  
V
2.2  
0.5  
1  
V
V
GND < VI < VCC  
µA  
µA  
mA  
IOZ  
ICC  
Output Leakage Current  
GND < VI < VCC, Output Disabled  
2  
+2  
VCC Operating  
Supply Current  
VCC = Max.,  
IOUT = 0 mA,  
f = fMAX = 1/tRC  
160  
130  
L
ISB1  
Automatic CE  
Power-Down Current  
TTL Inputs  
Max. VCC, CE > VIH  
VIN > VIH or  
VIN < VIL, f = fMAX  
20  
10  
mA  
L
L
ISB2  
Automatic CE  
Power-Down Current  
CMOS Inputs  
Max. VCC  
,
3
mA  
CE > VCC 0.3V,  
VIN > VCC 0.3V,  
or VIN < 0.3V, f = 0  
100  
µA  
Capacitance[3]  
Parameter  
Description  
Input Capacitance  
Output Capacitance  
Test Conditions  
Max.  
Unit  
pF  
CIN  
TA = 25°C, f = 1 MHz,  
VCC = 5.0V  
8
8
COUT  
pF  
Note:  
3. Tested initially and after any design or process changes that may affect these parameters.  
AC Test Loads and Waveforms  
R 481  
R 481Ω  
ALL INPUT PULSES  
90%  
5V  
5V  
3.0V  
GND  
90%  
10%  
OUTPUT  
OUTPUT  
10%  
R2  
255Ω  
R2  
255Ω  
30 pF  
5 pF  
INCLUDING  
JIG AND  
SCOPE  
INCLUDING  
JIG AND  
SCOPE  
<3 ns  
<3 ns  
(b)  
1020-3  
(a)  
1020-4  
167Ω  
30 pF  
1.73V  
OUTPUT  
Equivalent to:  
THÉVENIN  
EQUIVALENT  
Document #: 38-05058 Rev. **  
Page 3 of 10  
CY7C1020  
Switching Characteristics[4] Over the Operating Range  
7C1020-10  
7C1020-12  
7C1020-15  
7C1020-20  
Parameter  
Description  
Min. Max. Min. Max. Min. Max. Min. Max. Unit  
READ CYCLE  
tRC  
Read Cycle Time  
Address to Data Valid  
10  
3
12  
3
15  
3
20  
3
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
tAA  
10  
12  
15  
20  
tOHA  
tACE  
tDOE  
tLZOE  
tHZOE  
tLZCE  
tHZCE  
tPU  
Data Hold from Address Change  
CE LOW to Data Valid  
OE LOW to Data Valid  
OE LOW to Low Z  
OE HIGH to High Z[5, 6]  
CE LOW to Low Z[6]  
CE HIGH to High Z[5, 6]  
CE LOW to Power-Up  
CE HIGH to Power-Down  
Byte enable to Data Valid  
Byte enable to Low Z  
Byte disable to High Z  
10  
5
12  
5
15  
7
20  
9
0
3
0
0
3
0
0
3
0
0
3
0
5
5
6
6
7
7
8
8
tPD  
12  
5
12  
6
15  
7
20  
9
tDBE  
tLZBE  
tHZBE  
0
0
0
0
5
6
7
9
WRITE CYCLE[7]  
tWC  
tSCE  
tAW  
Write Cycle Time  
10  
8
12  
9
15  
10  
10  
0
12  
12  
12  
0
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
ns  
CE LOW to Write End  
Address Set-Up to Write End  
Address Hold from Write End  
Address Set-Up to Write Start  
WE Pulse Width  
7
8
tHA  
0
0
tSA  
0
0
0
0
tPWE  
tSD  
7
8
10  
10  
0
12  
10  
0
Data Set-Up to Write End  
Data Hold from Write End  
WE HIGH to Low Z[6]  
5
6
tHD  
0
0
tLZWE  
tHZWE  
3
3
3
3
WE LOW to High Z[5, 6]  
5
6
7
9
tBW  
Byte enable to end of write  
7
8
9
12  
Notes:  
4. Test conditions assume signal transition time of 3 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V, and output loading of the specified  
IOL/IOH and 30-pF load capacitance.  
5.  
tHZOE, tHZBE, tHZCE, and tHZWE are specified with a load capacitance of 5 pF as in part (b) of AC Test Loads. Transition is measured ±500 mV from steady-state voltage.  
6. At any given temperature and voltage condition, tHZCE is less than tLZCE, tHZOE is less than tLZOE, and tHZWE is less than tLZWE for any given device.  
7. The internal write time of the memory is defined by the overlap of CE LOW, WE LOW and BHE / BLE LOW. CE, WE and BHE / BLE must be LOW to initiate a write,  
and the transition of these signals can terminate the write. The input data set-up and hold timing should be referenced to the leading edge of the signal that terminates the write.  
Document #: 38-05058 Rev. **  
Page 4 of 10  
CY7C1020  
Switching Waveforms  
Read Cycle No. 1[8, 9]  
t
RC  
ADDRESS  
t
AA  
t
OHA  
DATA OUT  
PREVIOUS DATA VALID  
DATA VALID  
1020-5  
Read Cycle No. 2(OEControlled) [9, 10]  
ADDRESS  
t
RC  
CE  
t
ACE  
OE  
t
HZOE  
t
DOE  
BHE, BLE  
t
LZOE  
t
HZCE  
t
DBE  
t
LZBE  
t
HZBE  
HIGH  
IMPEDANCE  
HIGH IMPEDANCE  
DATA OUT  
DATA VALID  
t
LZCE  
t
PD  
I
t
CC  
PU  
V
CC  
50%  
50%  
SUPPLY  
CURRENT  
I
SB  
1020-6  
Notes:  
8. Device is continuously selected. OE, CE, BHE and/or BHE = VIL.  
9. WE is HIGH for read cycle.  
10. Address valid prior to or coincident with CE transition LOW.  
Document #: 38-05058 Rev. **  
Page 5 of 10  
CY7C1020  
Switching Waveforms (continued)  
Write Cycle No. 1 (CE Controlled) [11, 12]  
t
WC  
ADDRESS  
t
SA  
t
SCE  
CE  
t
AW  
t
HA  
t
PWE  
WE  
t
BW  
BHE, BLE  
t
t
SD  
HD  
DATAI/O  
1020-7  
Write Cycle No. 2 (BLEor BHE Controlled)  
t
WC  
ADDRESS  
t
SA  
t
BW  
BHE, BLE  
t
AW  
t
HA  
t
PWE  
WE  
CE  
t
SCE  
t
t
HD  
SD  
DATAI/O  
1020-8  
Notes:  
11. Data I/O is high impedance if OE or BHE and/or BLE= VIH  
.
12. If CE goes HIGH simultaneously with WE going HIGH, the output remains in a high-impedance state.  
Document #: 38-05058 Rev. **  
Page 6 of 10  
CY7C1020  
Switching Waveforms (continued)  
Write Cycle No.3  
Controlled, OE LOW)  
(WE  
t
WC  
ADDRESS  
CE  
t
SCE  
t
AW  
t
HA  
t
SA  
t
PWE  
WE  
t
BW  
BHE, BLE  
t
HZWE  
t
t
SD  
HD  
DATA I/O  
t
LZWE  
1020-10  
Truth Table  
CE OE WE BLE BHE  
I/O1I/O8  
High Z  
I/O9I/O16  
Mode  
Power  
H
L
X
L
X
H
X
L
X
L
High Z  
Power-Down  
Read - All bits  
Standby (ISB  
Active (ICC  
Active (ICC  
Active (ICC  
Active (ICC  
Active (ICC  
Active (ICC  
Active (ICC  
Active (ICC  
)
Data Out  
Data Out  
High Z  
Data Out  
High Z  
)
L
H
L
Read - Lower bits only  
Read - Upper bits only  
Write - All bits  
)
H
L
Data Out  
Data In  
High Z  
)
L
X
L
L
Data In  
Data In  
High Z  
)
L
H
L
Write - Lower bits only  
Write - Upper bits only  
)
H
X
H
Data In  
High Z  
)
L
L
H
X
H
X
X
H
High Z  
Selected, Outputs Disabled  
Selected, Outputs Disabled  
)
High Z  
High Z  
)
Document #: 38-05058 Rev. **  
Page 7 of 10  
CY7C1020  
Ordering Information  
Speed  
Package  
Name  
Operating  
Range  
(ns)  
Ordering Code  
Package Type  
44-Lead (400-Mil) Molded SOJ  
44-Lead (400-Mil) Molded SOJ  
44-Lead TSOP Type II  
10  
CY7C1020-10VC  
CY7C1020L-10VC  
CY7C1020-10ZC  
CY7C1020L-10ZC  
CY7C1020-12VC  
CY7C1020L-12VC  
CY7C1020-12ZC  
CY7C1020L-12ZC  
CY7C1020-15VC  
CY7C1020L-15VC  
CY7C1020-15ZC  
CY7C1020L-15ZC  
CY7C1020-20VC  
CY7C1020L-20VC  
CY7C1020-20ZC  
CY7C1020L-20ZC  
V34  
V34  
Z44  
Z44  
V34  
V34  
Z44  
Z44  
V34  
V34  
Z44  
Z44  
V34  
V34  
Z44  
Z44  
Commercial  
Commercial  
Commercial  
Commercial  
Commercial  
Commercial  
Commercial  
Commercial  
Commercial  
Commercial  
Commercial  
Commercial  
Commercial  
Commercial  
Commercial  
Commercial  
44-Lead TSOP Type II  
12  
15  
20  
44-Lead (400-Mil) Molded SOJ  
44-Lead (400-Mil) Molded SOJ  
44-Lead TSOP Type II  
44-Lead TSOP Type II  
44-Lead (400-Mil) Molded SOJ  
44-Lead (400-Mil) Molded SOJ  
44-Lead TSOP Type II  
44-Lead TSOP Type II  
44-Lead (400-Mil) Molded SOJ  
44-Lead (400-Mil) Molded SOJ  
44-Lead TSOP Type II  
44-Lead TSOP Type II  
Package Diagrams  
44-Lead (400-Mil) Molded SOJ V34  
51-85082-B  
Document #: 38-05058 Rev. **  
Page 8 of 10  
CY7C1020  
Package Diagrams (continued)  
44-Pin TSOP II Z44  
51-85087-A  
Document #: 38-05058 Rev. **  
Page 9 of 10  
© Cypress Semiconductor Corporation, 2001. The information contained herein is subject to change without notice. Cypress Semiconductor Corporation assumes no responsibility for the use  
of any circuitry other than circuitry embodied in a Cypress Semiconductor product. Nor does it convey or imply any license under patent or other rights. Cypress Semiconductor does not authorize  
its products for use as critical components in life-support systems where a malfunction or failure may reasonably be expected to result in significant injury to the user. The inclusion of Cypress  
Semiconductor products in life-support systems application implies that the manufacturer assumes all risk of such use and in doing so indemnifies Cypress Semiconductor against all charges.  
CY7C1020  
Document Title: CY7C1020 32K x 16 Static RAM  
Document Number: 38-05058  
Issue  
Date  
Orig. of  
Change  
REV.  
ECN NO.  
Description of Change  
Change from Spec number: 38-00542 to 38-05058  
**  
107249  
09/10/01  
SZV  
Document #: 38-05058 Rev. **  
Page 10 of 10  

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