CEFA105-G [COMCHIP]
SMD Efficient Fast Recovery Rectifier; SMD高效快速恢复整流器
| 型号： | CEFA105-G |
| 厂家： | 
COMCHIP TECHNOLOGY |
| 描述： | SMD Efficient Fast Recovery Rectifier |
| 文件： | 总2页 (文件大小：108K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Efficient Fast Recovery Rectifier
CEFA101-G Thru CEFA105-G (RoHS Device)
Reverse Voltage: 50 ~ 600 Volts
Forward Current: 1.0 Amp
Features:
Ideal for surface mount applications
Easy pick and place
DO-214AC (SMA)
Plastic package has Underwriters Lab.
flammability classification 94V-0.
0.067(1.70)
0.051(1.29)
0.110(2.79)
0.086(2.18)
Super fast recovery time for high efficient
Built-in strain relief
0.180(4.57)
0.160(4.06)
Low forward voltage drop
0.012(0.31)
0.006(0.15)
Mechanical Data:
0.091(2.31)
0.067(1.70)
Case: JEDEC DO-214AC molded plastic
Terminals: solderable per MIL-STD-750,
method 2026
Polarity: Color band denotes cathode end
Approx. Weight: 0.063 gram
0.008(0.20)
0.004(0.10)
0.059(1.50)
0.035(0.89)
0.209(5.31)
0.185(4.70)
Dimensions in inches and (millimeters)
Maximum Ratings and Electrical Characterics:
Parameter
Max. Repetitive Peak Reverse Voltage
Max. DC Blocking Voltage
Max. RMS Voltage
Symbol CEFA101-G CEFA102-G CEFA103-G CEFA104-G CEFA105-G
Unit
V
50
100
200
400
400
280
600
VRRM
VDC
V
50
35
100
70
200
140
600
420
VRMS
V
Peak Surge Forward Current
8.3ms single half sine-wave
superimposed on rate load
(JEDEC method)
IFSM
A
30
A
V
Max. Average Forward Current
Io
1.0
Max. Instantaneous Forward Voltage
at 1.0A
VF
Trr
0.92
25
1.25
35
1.3
50
Reverse recovery time
nS
Max. DC Reverse Current at Rated DC
Ta=25oC
IR
uA
Blocking Voltage
5.0
200
Ta=100oC
R
Max. Thermal Resistance (Note1)
Max. Operating Junction Temperature
Storage Temperature
oC/W
oC
25
150
JL
Tj
oC
TSTG
-55 to +150
Note1: Thermal resistance from junction to lead mounted on PCB with 8.0mmx8.0mm2 copper pad areas.
“-G” suffix designates RoHS compliant Version
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SMD Efficient Fast Recovery Rectifier
Rating and Characteristic Curves (CEFA101-G Thru CEFA105-G)
Fig. 1 - Reverse Characteristics
Fig.2 - Forward Characteristics
CEFA101-103
10
100
10
Tj=125 C
Tj=75 C
CEFA104
1.0
0.1
0.01
1.0
0.1
CEFA105
Tj=25 C
Tj=25 C
Pulse width 300uS
4% duty cycle
0.01
0
0.001
15
30 45 60 75 90 105 120 135 150
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig. 4 - Non Repetitive Forward Surge Current
Fig. 3 - Junction Capacitance
35
50
8.3mS Single HalfSine
Wave JEDEC methode
f=1MHz and applied
4VDC reverse voltage
30
25
20
15
10
40
Tj=25 C
30
20
CEFA101-103
Tj=25 C
CEFA104-105
10
0
5
0
1
5
10
50
100
0.01
0.1
1.0
10
100
Reverse Voltage(V)
Number of Cycles at 60Hz
Fig 5 - Test Circuit Diagram and Reverse Recovery Time Characteristics
Fig. 6 - Current Derating Curve
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
trr
50
10
NONINDUCTIVE
NONINDUCTIVE
|
|
|
|
|
|
|
|
+0.5A
(
)
(+)
0
D.U.T.
25Vdc
(approx.)
PULSE
GENERATOR
(NOTE 2)
-0.25A
(
)
(+)
Single Phase
1
OSCILLISCOPE
(NOTE 1)
NON-
Half Wave 60Hz
INDUCTIVE
-1.0A
Notes: 1. Rise Time = 7ns max., Input Impedance = 1 megohm.22pF.
2. Rise Time = 10ns max., Source Impedance = 50 ohms.
0
25
50
75
100 125 150 175
1cm
( C)
Ambient Temperature
Set Time Base For
50 / 10ns / cm
“-G” suffix designates RoHS compliant Version
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