CEFA202 [COMCHIP]
SMD Efficient Fast Recovery Rectifier; SMD高效快速恢复整流器
| 型号： | CEFA202 |
| 厂家： | 
COMCHIP TECHNOLOGY |
| 描述： | SMD Efficient Fast Recovery Rectifier |
| 文件： | 总2页 (文件大小：69K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SSMMDD EEffffiicciieenntt FFaasstt RReeccoovveerryy RReeccttiiffiieerr
CCOOMMCCHHIIPP
www.comchip.com.tw
CEFA201 Thru CEFA203
Reverse Voltage: 50 - 400 Volts
Forward Current: 2.0 Amp
Features
DO-214AC (SMA)
Ideal for surface mount applications
Easy pick and place
Plastic package has Underwriters Lab.
0.067(1.70)
0.110(2.79)
0.086(2.18)
flammability classification 94V-0
0.051(1.29)
Super fast recovery time for high efficient
Built-in strain relief
0.180(4.57)
0.160(4.06)
Low forward voltage drop
0.012(0.31)
0.006(0.15)
0.091(2.31)
0.067(1.70)
Mechanical Data
0.008(0.20)
0.004(0.10)
0.059(1.50)
0.035(0.89)
Case: JEDEC DO-214AC molded plastic
0.209(5.31)
0.185(4.70)
Terminals: solderable per MIL-STD-750,
method 2026
Polarity: Color band denotes cathode
end
Dimensions in inches and (millimeters)
Mounting position: Any
Approx. Weight:0.063 gram
Maximum Ratings and Electrical Characterics
CEFA
201
CEFA
202
CEFA
203
Unit
Symbol
VRRM
VDC
Parameter
200
200
140
100
100
70
50
50
35
Max. Repetitive PeakReverse Voltage
Max. DC BlockingVoltage
Max. RMS Voltage
V
V
V
VRMS
Peak Surge ForwardCurrent
8.3ms single halfsine-wave
superimposed on rateload
( JEDEC method)
IFSM
A
50
I o
2.0
0.92
25
Max. Average Forward Current
A
Max. Instantaneous ForwardCurrent
at 1.0 A
V F
V
Trr
Reverse recovery time
nS
Max. DC ReverseCurrent at RatedDC
I R
5.0
Blocking Voltage
Ta=25 C
Ta=100C
uA
250
20
R
JL
Max. Thermal Resistance(Note 1)
Operating Junction Temperature
Storage Temperature
C/W
- 5 5 t o + 1 5 0
T j
C
- 5 5 t o + 1 5 0
TSTG
C
Note 1: Thermal resistance from junction to lead P.C.B. Mounted on 8.0x8.0 mm copper pad areas.
Page 1
MDS0301003A
SSMMDD EEffffiicciieenntt FFaasstt RReeccoovveerryy RReeccttiiffiieerr
CCOOMMCCHHIIPP
www.comchip.com.tw
Rating and Characteristic Curves (CEFA201 Thru CEFA203)
Fig. 1 - Reverse Characteristics
Fig.2 - Forward Characteristics
100
10
10
1.0
Tj=125 C
1.0
Tj=75 C
0.1
0.01
0.1
Tj=25 C
Tj=25 C
Pulse width 300uS
4% duty cycle
0. 01
0
0.001
20
40
60
80 100 120 140
0
0.2
0.4
0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
Forward Voltage (V)
Percent of RatedPeak Reverse Voltage (%)
Fig. 3 - Current Derating Curve
Fig. 4 - Non Repetitive Forward
Surge Current
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0
50
8.3mS Single HalfSine
Wave JEDEC methode
40
30
Tj=25 C
20
Single Phase
Half Wave 60Hz
10
0
0
25
50
75
100 125 150 175
1
5
10
50
1 00
Ambient Temperature ( C)
Number of Cyclesat 60Hz
Fig. 5 - Test Circuit Dai gram and Reverse Recovery Time Characteristics
trr
50
W
W
10
NONINDUCTIVE
NONINDUCTIVE
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|
|
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+0.5A
0
( )
(+)
D.U.T.
25Vdc
PULSE
GENERATOR
(NOTE 2)
-0.25A
(approx.)
( )
(+)
1W
OSCILLISCOPE
(NOTE 1)
NON-
INDUCTIVE
-1.0A
1cm
NOTES: 1. Rise Time= 7ns max., Input Impedance= 1 megohm.22pF.
2. Rise Time= 10ns max., Source Impedance= 50 ohms.
SET TIME BASE FOR
50 / 10ns / cm
Page 2
MDS0301003A
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