CEFA201-G_12 [COMCHIP]
SMD Efficient Fast Recovery Rectifiers; SMD高效快速恢复二极管
| 型号： | CEFA201-G_12 |
| 厂家： | 
COMCHIP TECHNOLOGY |
| 描述： | SMD Efficient Fast Recovery Rectifiers |
| 文件： | 总2页 (文件大小：59K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SMD Efficient Fast Recovery Rectifiers
CEFA201-G Thru. CEFA203-G
Reverse Voltage: 50 to 200 Volts
Forward Current: 2.0 Amp
RoHS Device
Features
DO-214AC (SMA)
-Ideal for surface mount applications.
-Easy pick and place.
0.180(4.57)
0.160(4.06)
-Plastic package has Underwriters Lab.
flammability classification 94V-0.
0.110(2.79)
0.086(2.18)
0.067(1.70)
0.051(1.29)
-Super fast recovery time for high efficient.
-Built-in strain relief.
-Low forward voltage drop.
0.209(5.31)
0.185(4.70)
0.012(0.31)
0.006(0.15)
Mechanical data
-Case: JEDEC DO-214AC, molded plastic.
0.091(2.31)
0.067(1.70)
-Terminals: solderable per MIL-STD-750,
method 2026.
0.008(0.20)
0.004(0.10)
0.059(1.50)
0.035(0.89)
-Polarity: Color band denotes cathode end.
-Approx. weight: 0.063 grams
Dimensions in inches and (millimeter)
Maximum Ratings and Electrical Characteristics
Parameter
Symbol
CEFA201-G
CEFA202-G
CEFA203-G
Units
Max. repetitive peak reverse voltage
Max. DC blocking voltage
Max. RMS voltage
VRRM
VDC
50
50
35
100
100
70
200
200
140
V
V
V
VRMS
Peak surge forward current, 8.3ms
single half sine-wave superimposed
on rate load (JEDEC method)
IFSM
IO
50
A
A
2.0
Max. average forward current
Max. instantaneous forward voltage at
2.0A
VF
Trr
0.92
25
V
nS
Reverse recovery time
Max. DC reverse current at TA=25 OC
rated DC blocking voltage TA=100 OC
5.0
100
IR
μA
RθJL
TJ
55
150
Max. thermal resistance (Note 1)
Max. operating junction temperature
Storage temperature
OC/W
OC
OC
TSTG
-55 to +150
2
Notes: 1. Thermal resistance from junction to lead mounted on P.C.B. with 8.0×8.0 mm copper pad area.
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Comchip Technology CO., LTD.
SMD Efficient Fast Recovery Rectifiers
RATING AND CHARACTERISTIC CURVES (CEFA201-G thru CEFA203-G)
Fig.1 Reverse Characteristics
Fig.2 Forward Characteristics
100
10
10
1
TJ=125 OC
1
0.1
0.01
TJ=75 O
TJ=25 O
C
C
0.1
TJ=25 O
C
Pulse width 300μS
4% duty cycle
0.01
0.001
0
0.4
0.8
1.2
1.6
2.0
0
20
40
60
80
100
120
140
Forward Voltage (V)
Percent of Rated Peak Reverse Voltage (%)
Fig.3 Current Derating Curve
Fig.4 Non-repetitive Forward Surge Current
2.8
50
TJ=25 O
C
8.3ms single half sine
wave, JEDEC method
2.4
2.0
1.6
1.2
0.8
0.4
0
40
30
20
10
Single phase
Half wave 60Hz
0
0
25
50
75
100
125
150
175
1
10
100
Ambient Temperature ( OC)
Number of Cycles at 60Hz
Fig.5 Test Circuit Diagram and Reverse Recovery Time Characteristics
trr
50Ω
10Ω
NONINDUCTIVE
NONINDUCTIVE
+0.5A
(-)
(+)
0
D.U.T.
25Vdc
(approx.)
(-)
PULSE
GENERATOR
(NOTE 2)
-0.25A
(+)
1Ω
OSCILLLISCOPE
(NOTE 1)
NON-
INDUCTIVE
NOTES: 1. Rise time=7ns max., input impedance=1 MΩ, 22pF.
2. Rise time=10ns max., input impedance=50Ω.
-1.0A
1cm
Set time base for
50 / 10nS / cm
REV:A
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QW-BE002
Comchip Technology CO., LTD.
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