CDBDSC3650-G [COMCHIP]
Silicon Carbide Power Schottky Diode;
| 型号： | CDBDSC3650-G |
| 厂家： | 
COMCHIP TECHNOLOGY |
| 描述： | Silicon Carbide Power Schottky Diode |
| 文件： | 总2页 (文件大小：91K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Silicon Carbide Power Schottky Diode
CDBDSC3650-G
Reverse Voltage: 650 V
Forward Current: 3 A
RoHS Device
D-PAK(TO-252)
Features
- Rated to 650V at 3 Amps
0.264(6.70)
0.256(6.50)
0.091(2.32)
0.089(2.28)
0.215(5.46)
0.201(5.10)
- Short recovery time
0.023(0.58)
0.018(0.46)
- High speed switching possible
- High frequency operation.
- High temperature operation.
- Temperature independent switching behaviour.
- Positive temperature coefficient on VF
3
0.012(0.30)
Max.
0.051(1.30)
0.043(1.10)
1
2
0.114(2.90)
0.100(2.55)
0.090(2.29)
0.035(0.89)
0.034(0.86)
0.026(0.66)
Circuit Diagram
0.093(2.37)
0.085(2.16)
0.023(0.58)
0.016(0.43)
C(3)
Dimensions in inches and (millimeters)
C(1)
A(2)
Maximum Ratings (at TA=25°C, unless otherwise noted)
Symbol
Value
650
Parameter
Repetitive peak reverse voltage
Surge peak reverse voltage
DC bolcking voltage
Conditions
Unit
V
VRRM
VRSM
VDC
650
V
650
V
TC = 25°C
TC = 135°C
TC = 155°C
11
5
3
Continuous forward current
IF
A
Tc = 25°C, tp = 10ms
Repetitive peak forward surge cruuent
Non-repetitive peak forward surge current
IFRM
IFSM
15
35
A
A
Half sine wave, D = 0.3
Tc = 25°C, tp = 10ms
Half sine wave
53.2
23
TC = 25°C
Power dissipation
W
PTOT
TC = 110°C
Typical thermal resistance
Junction to case
RθJC
TJ
2.82
°C/W
°C
Operating junction temperature range
Storage temperature range
-55 ~ +175
-55 ~ +175
TSTG
°C
Company reserves the right to improve product design , functions and reliability without notice.
REV:
Page 1
QW-BSCXX
Comchip Technology CO., LTD.
Silicon Carbide Power Schottky Diode
Electrical Characteristics (at TA=25°C, unless otherwise noted)
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IF = 3A, Tj = 25°C
1.4
1.8
10
1.7
2.5
Forward voltage
VF
V
IF = 3A, Tj = 175°C
VR = 650V, Tj = 25°C
VR = 650V, Tj = 175°C
VR = 400V, Tj = 150°C
100
200
μA
Reverse current
IR
20
Total capacitive charge
QC = ∫VR C(V) dv
QC
nC
11
0
VR = 0V, Tj = 25°C, f = 1MHZ
VR = 200V, Tj = 25°C, f = 1MHZ
VR = 400V, Tj=25°C, f=1MHZ
181
22.5
20.5
220
25
Total capacitance
pF
C
21
RATING AND CHARACTERISTIC CURVES (CDBDSC3650-G)
Fig.1 - Forward Characteristics
Fig.2 - Reverse Characteristics
6
5
4
3
2
1
0
0.040
0.035
0.030
0.025
0.020
0.015
0.010
0.005
0
TJ=25°C
TJ=75°C
TJ=125°C
TJ=75°C
TJ=125°C
TJ=175°C
TJ=175°C
TJ=25°C
0
0.5
1.0
1.5
2.0
2.5
0
100 200 300 400 500 600 700 800
Reverse Voltage, VR (V)
Forward Voltage, VF (V)
Fig.3 - Current Derating
Fig.4 - Capacitance vs. Reverse Voltage
40
35
30
25
20
15
10
5
200
180
160
140
120
100
80
10% Duty
30% Duty
50% Duty
60
40
70% Duty
DC
20
0
0
25
50
75
100
125
150
175
0.01
0.1
1
10
100
1000
Case Tempature, TC (°C)
Reverse Voltage, VR (V)
Company reserves the right to improve product design , functions and reliability without notice.
REV:
Page 2
QW-BSCXX
Comchip Technology CO., LTD.
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