CDBDSC51200-G [COMCHIP]
Silicon Carbide Power Schottky Diode;型号: | CDBDSC51200-G |
厂家: | COMCHIP TECHNOLOGY |
描述: | Silicon Carbide Power Schottky Diode |
文件: | 总4页 (文件大小:118K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Silicon Carbide Power Schottky Diode
CDBDSC51200-G
Reverse Voltage: 1200 V
Forward Current: 5 A
RoHS Device
D-PAK(TO-252)
0.098(2.50)
0.083(2.10)
0.268(6.80)
0.248(6.30)
Features
0.217(5.50)
0.201(5.10)
0.024(0.60)
0.016(0.40)
- Rated to 1200V at 5 Amps
4
2
- Zero reverse recovery current
- Zero forward recovery voltage
- Temperature independent switching behaviour.
- High temperature operation.
0.244(6.20)
0.213(5.40)
1
3
0.126(3.20)
0.094(2.40)
0.039(1.00)
0.020(0.50)
- High frequency operation.
0.090(2.29)
0.016(0.40)
0.187(4.74)
0.171(4.34)
0.024(0.60)
0.016(0.40)
Mechanical data
- Case: TO-252/D-PAK, molded plastic.
Dimensions in inches and (millimeters)
- Terminals: Solderable per MIL-STD-750,
method 2026.
Circuit Diagram
(3)
C
A
(1) (2)
C
Maximum Ratings (at TA=25°C, unless otherwise noted)
Symbol
Limits
1200
Parameter
Conditions
Unit
V
Repetitive peak reverse voltage
Tj = 25°C
Tj = 25°C
Tj = 25°C
VRRM
VRSM
VDC
Surge peak reverse voltage
DC bolcking voltage
1200
V
1200
V
Tj = 25°C
Tj = 135°C
Tj = 158°C
18
8.5
5
Continuous forward current
IF
A
Tc = 25°C, tp = 10ms
Repetitive peak forward surge cruuent
Non-repetitive peak forward surge current
IFRM
IFSM
25
50
A
A
Half sine wave, D = 0.3
Tc = 25°C, tp = 10ms
Half sine wave
109.5
47
TC = 25°C
Power dissipation
PTOT
W
TC = 110°C
Typical thermal resistance
Junction to case
RθJC
TJ
1.37
°C/W
°C
Operating junction temperature range
Storage temperature range
-55 ~ +175
-55 ~ +175
TSTG
°C
Company reserves the right to improve product design , functions and reliability without notice.
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Comchip Technology CO., LTD.
Silicon Carbide Power Schottky Diode
Electrical Characteristics (at TA=25°C, unless otherwise noted)
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IF = 5A, Tj = 25°C
1.45
2.05
20
1.7
2.5
Forward voltage
VF
V
IF = 5A, Tj = 175°C
VR = 1200V, Tj = 25°C
VR = 1200V, Tj = 175°C
VR = 800V, Tj = 150°C
100
200
μA
Reverse current
IR
50
Total capacitive charge
QC = ∫VR C(V) dv
QC
nC
36
0
VR = 0V, Tj = 25°C, f = 1MHZ
VR = 400V, Tj = 25°C, f = 1MHZ
VR = 800V, Tj=25°C, f=1MHZ
475
34
510
44
Total capacitance
pF
C
33
40
RATING AND CHARACTERISTIC CURVES (CDBDSC51200-G)
Fig.1 - Forward Characteristics
Fig.2 - Reverse Characteristics
0.04
0.035
0.03
7
6
5
4
3
2
TJ=1275°C
0.025
0.02
TJ=125°C
TJ=75°C
0.015
TJ=25°C
0.01
0.005
0
1
0
0
0.5
1.0
1.5
2.0
2.5
0
500
1000
1500
Forward Voltage, VF (V)
Reverse Voltage, VR (V)
Fig.3 - Current Derating
Fig.4 - Capacitance Characteristics
70
60
50
40
30
20
10
0
500
400
300
200
100
50% Duty
70% Duty
D.C.
0
25
50
75
100
125
150
175
0.01
0.1
1
10
100
1000
Case Tempature, TC (°C)
Reverse Voltage, VR (V)
Company reserves the right to improve product design , functions and reliability without notice.
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Comchip Technology CO., LTD.
Silicon Carbide Power Schottky Diode
Reel Taping Specification
d
P0
P1
E
F
Index hole
W
B
C
P
A
1
2
0
o
D2
D
D1
W1
Trailer
.......
Device
.......
Leader
.......
.......
.......
Start
End
.......
.......
.......
160mm (min)
400mm (min)
Direction of Feed
SYMBOL
A
B
C
d
D
D1
D2
76.50 + 2.00
(mm)
6.96 ± 0.10
10.49 ± 0.10
2.79 ± 0.10
1.55 ± 0.05
330.00 ± 2.00
13.30 ± 1.00
TO-252/D-PAK
TO-252/D-PAK
- 0.00
3.012 + 0.079
- 0.00
(inch)
0.274 ± 0.004
0.413 ± 0.004
0.110 ± 0.004
0.061 ± 0.002 12.992 ± 0.079
0.524 ± 0.039
SYMBOL
(mm)
E
F
P
P0
P1
W
W1
1.75 ± 0.10
7.50 ± 0.10
8.00 ± 0.10
4.00 ± 0.10
2.00 ± 0.10
16.00 ± 0.20
21.00 Max.
(inch)
0.069 ± 0.004
0.295 ± 0.004
0.315 ± 0.004
0.157 ± 0.004
0.079 ± 0.004
0.630 ± 0.008
0.827 Max.
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Company reserves the right to improve product design , functions and reliability without notice.
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Comchip Technology CO., LTD.
Silicon Carbide Power Schottky Diode
Marking Code
Marking Code
Part Number
CDBDSC51200-G
ESIC05120SD
ESIC05120SD
Suggested PAD Layout
TO-252 / DPAK
SIZE
D
(mm)
4.57
1.20
5.80
5.85
2.00
(inch)
0.180
0.047
0.228
0.230
0.079
E
A
B
C
D
E
A
C
B
Standard Packaging
REEL PACK
Case Type
REEL
REEL SIZE
( pcs )
(inch)
2,500
TO-252/D-PAK
13
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Page 4
Company reserves the right to improve product design , functions and reliability without notice.
QW-BSC01
Comchip Technology CO., LTD.
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