CDBDSC51200-G [COMCHIP]

Silicon Carbide Power Schottky Diode;
CDBDSC51200-G
型号: CDBDSC51200-G
厂家: COMCHIP TECHNOLOGY    COMCHIP TECHNOLOGY
描述:

Silicon Carbide Power Schottky Diode

文件: 总4页 (文件大小:118K)
中文:  中文翻译
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Silicon Carbide Power Schottky Diode  
CDBDSC51200-G  
Reverse Voltage: 1200 V  
Forward Current: 5 A  
RoHS Device  
D-PAK(TO-252)  
0.098(2.50)  
0.083(2.10)  
0.268(6.80)  
0.248(6.30)  
Features  
0.217(5.50)  
0.201(5.10)  
0.024(0.60)  
0.016(0.40)  
- Rated to 1200V at 5 Amps  
4
2
- Zero reverse recovery current  
- Zero forward recovery voltage  
- Temperature independent switching behaviour.  
- High temperature operation.  
0.244(6.20)  
0.213(5.40)  
1
3
0.126(3.20)  
0.094(2.40)  
0.039(1.00)  
0.020(0.50)  
- High frequency operation.  
0.090(2.29)  
0.016(0.40)  
0.187(4.74)  
0.171(4.34)  
0.024(0.60)  
0.016(0.40)  
Mechanical data  
- Case: TO-252/D-PAK, molded plastic.  
Dimensions in inches and (millimeters)  
- Terminals: Solderable per MIL-STD-750,  
method 2026.  
Circuit Diagram  
(3)  
C
A
(1) (2)  
C
Maximum Ratings (at TA=25°C, unless otherwise noted)  
Symbol  
Limits  
1200  
Parameter  
Conditions  
Unit  
V
Repetitive peak reverse voltage  
Tj = 25°C  
Tj = 25°C  
Tj = 25°C  
VRRM  
VRSM  
VDC  
Surge peak reverse voltage  
DC bolcking voltage  
1200  
V
1200  
V
Tj = 25°C  
Tj = 135°C  
Tj = 158°C  
18  
8.5  
5
Continuous forward current  
IF  
A
Tc = 25°C, tp = 10ms  
Repetitive peak forward surge cruuent  
Non-repetitive peak forward surge current  
IFRM  
IFSM  
25  
50  
A
A
Half sine wave, D = 0.3  
Tc = 25°C, tp = 10ms  
Half sine wave  
109.5  
47  
TC = 25°C  
Power dissipation  
PTOT  
W
TC = 110°C  
Typical thermal resistance  
Junction to case  
RθJC  
TJ  
1.37  
°C/W  
°C  
Operating junction temperature range  
Storage temperature range  
-55 ~ +175  
-55 ~ +175  
TSTG  
°C  
Company reserves the right to improve product design , functions and reliability without notice.  
QW-BSC01  
REV:A  
Page 1  
Comchip Technology CO., LTD.  
Silicon Carbide Power Schottky Diode  
Electrical Characteristics (at TA=25°C, unless otherwise noted)  
Symbol  
Parameter  
Conditions  
Min.  
Typ.  
Max.  
Unit  
IF = 5A, Tj = 25°C  
1.45  
2.05  
20  
1.7  
2.5  
Forward voltage  
VF  
V
IF = 5A, Tj = 175°C  
VR = 1200V, Tj = 25°C  
VR = 1200V, Tj = 175°C  
VR = 800V, Tj = 150°C  
100  
200  
μA  
Reverse current  
IR  
50  
Total capacitive charge  
QC = VR C(V) dv  
QC  
nC  
36  
0
VR = 0V, Tj = 25°C, f = 1MHZ  
VR = 400V, Tj = 25°C, f = 1MHZ  
VR = 800V, Tj=25°C, f=1MHZ  
475  
34  
510  
44  
Total capacitance  
pF  
C
33  
40  
RATING AND CHARACTERISTIC CURVES (CDBDSC51200-G)  
Fig.1 - Forward Characteristics  
Fig.2 - Reverse Characteristics  
0.04  
0.035  
0.03  
7
6
5
4
3
2
TJ=1275°C  
0.025  
0.02  
TJ=125°C  
TJ=75°C  
0.015  
TJ=25°C  
0.01  
0.005  
0
1
0
0
0.5  
1.0  
1.5  
2.0  
2.5  
0
500  
1000  
1500  
Forward Voltage, VF (V)  
Reverse Voltage, VR (V)  
Fig.3 - Current Derating  
Fig.4 - Capacitance Characteristics  
70  
60  
50  
40  
30  
20  
10  
0
500  
400  
300  
200  
100  
50% Duty  
70% Duty  
D.C.  
0
25  
50  
75  
100  
125  
150  
175  
0.01  
0.1  
1
10  
100  
1000  
Case Tempature, TC (°C)  
Reverse Voltage, VR (V)  
Company reserves the right to improve product design , functions and reliability without notice.  
QW-BSC01  
REV:A  
Page 2  
Comchip Technology CO., LTD.  
Silicon Carbide Power Schottky Diode  
Reel Taping Specification  
d
P0  
P1  
E
F
Index hole  
W
B
C
P
A
1
2
0
o
D2  
D
D1  
W1  
Trailer  
.......  
Device  
.......  
Leader  
.......  
.......  
.......  
Start  
End  
.......  
.......  
.......  
160mm (min)  
400mm (min)  
Direction of Feed  
SYMBOL  
A
B
C
d
D
D1  
D2  
76.50 + 2.00  
(mm)  
6.96 ± 0.10  
10.49 ± 0.10  
2.79 ± 0.10  
1.55 ± 0.05  
330.00 ± 2.00  
13.30 ± 1.00  
TO-252/D-PAK  
TO-252/D-PAK  
- 0.00  
3.012 + 0.079  
- 0.00  
(inch)  
0.274 ± 0.004  
0.413 ± 0.004  
0.110 ± 0.004  
0.061 ± 0.002 12.992 ± 0.079  
0.524 ± 0.039  
SYMBOL  
(mm)  
E
F
P
P0  
P1  
W
W1  
1.75 ± 0.10  
7.50 ± 0.10  
8.00 ± 0.10  
4.00 ± 0.10  
2.00 ± 0.10  
16.00 ± 0.20  
21.00 Max.  
(inch)  
0.069 ± 0.004  
0.295 ± 0.004  
0.315 ± 0.004  
0.157 ± 0.004  
0.079 ± 0.004  
0.630 ± 0.008  
0.827 Max.  
REV:A  
Page 3  
Company reserves the right to improve product design , functions and reliability without notice.  
QW-BSC01  
Comchip Technology CO., LTD.  
Silicon Carbide Power Schottky Diode  
Marking Code  
Marking Code  
Part Number  
CDBDSC51200-G  
ESIC05120SD  
ESIC05120SD  
Suggested PAD Layout  
TO-252 / DPAK  
SIZE  
D
(mm)  
4.57  
1.20  
5.80  
5.85  
2.00  
(inch)  
0.180  
0.047  
0.228  
0.230  
0.079  
E
A
B
C
D
E
A
C
B
Standard Packaging  
REEL PACK  
Case Type  
REEL  
REEL SIZE  
( pcs )  
(inch)  
2,500  
TO-252/D-PAK  
13  
REV:A  
Page 4  
Company reserves the right to improve product design , functions and reliability without notice.  
QW-BSC01  
Comchip Technology CO., LTD.  

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