CDBDSC5650-G [COMCHIP]
Silicon Carbide Power Schottky Diode;
| 型号： | CDBDSC5650-G |
| 厂家： | 
COMCHIP TECHNOLOGY |
| 描述： | Silicon Carbide Power Schottky Diode 二极管 |
| 文件： | 总2页 (文件大小：91K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Silicon Carbide Power Schottky Diode
CDBDSC5650-G
Reverse Voltage: 650 V
Forward Current: 5 A
RoHS Device
D-PAK(TO-252)
Features
0.264(6.70)
0.256(6.50)
- Rated to 650V at 5 Amps
- Short recovery time
0.091(2.32)
0.089(2.28)
0.215(5.46)
0.201(5.10)
0.023(0.58)
0.018(0.46)
- High speed switching possible
- High frequency operation.
- High temperature operation.
- Temperature independent switching behaviour.
- Positive temperature coefficient on VF
3
0.012(0.30)
Max.
0.051(1.30)
0.043(1.10)
1
2
0.114(2.90)
0.100(2.55)
0.090(2.29)
0.035(0.89)
Circuit Diagram
0.034(0.86)
0.026(0.66)
0.093(2.37)
0.085(2.16)
0.023(0.58)
0.016(0.43)
C(3)
Dimensions in inches and (millimeters)
C(1)
A(2)
Maximum Ratings (at TA=25°C, unless otherwise noted)
Symbol
Value
650
Parameter
Repetitive peak reverse voltage
Surge peak reverse voltage
DC bolcking voltage
Conditions
Unit
V
VRRM
VRSM
VDC
650
V
650
V
TC = 25°C
TC = 135°C
TC = 160°C
21.5
10
5
Continuous forward current
IF
A
Tc = 25°C, tp = 10ms
Repetitive peak forward surge cruuent
Non-repetitive peak forward surge current
IFRM
IFSM
40
80
A
A
Half sine wave, D = 0.3
Tc = 25°C, tp = 10ms
Half sine wave
85.8
37.2
TC = 25°C
Power dissipation
W
PTOT
TC = 110°C
Typical thermal resistance
Junction to case
RθJC
TJ
1.748
°C/W
°C
Operating junction temperature range
Storage temperature range
-55 ~ +175
-55 ~ +175
TSTG
°C
Company reserves the right to improve product design , functions and reliability without notice.
REV:
Page 1
QW-BSCXX
Comchip Technology CO., LTD.
Silicon Carbide Power Schottky Diode
Electrical Characteristics (at TA=25°C, unless otherwise noted)
Symbol
Parameter
Conditions
Min.
Typ.
Max.
Unit
IF = 5A, Tj = 25°C
1.35
1.55
10
1.7
2.5
Forward voltage
VF
V
IF = 5A, Tj = 175°C
VR = 650V, Tj = 25°C
VR = 650V, Tj = 175°C
VR = 400V, Tj = 150°C
100
200
μA
Reverse current
IR
15
Total capacitive charge
QC = ∫VR C(V) dv
QC
nC
23
0
VR = 0V, Tj = 25°C, f = 1MHZ
VR = 200V, Tj = 25°C, f = 1MHZ
VR = 400V, Tj=25°C, f=1MHZ
424
44
434
45
Total capacitance
pF
C
42.5
43
RATING AND CHARACTERISTIC CURVES (CDBDSC5650-G)
Fig.1 - Forward Characteristics
Fig.2 - Reverse Characteristics
9
8
7
6
5
4
3
2
1
0
0.16
0.14
0.12
0.10
0.08
0.06
0.04
0.02
0
TJ=25°C
TJ=75°C
TJ=125°C
TJ=75°C
TJ=125°C
TJ=175°C
TJ=175°C
TJ=25°C
0
0.4
0.8
1.2
1.6
2.0
2.4
0
100 200 300 400 500 600 700 800
Reverse Voltage, VR (V)
Forward Voltage, VF (V)
Fig.3 - Current Derating
Fig.4 - Capacitance vs. Reverse Voltage
80
70
60
50
40
30
20
10
0
500
450
400
350
300
250
200
150
100
50
0
25
50
75
100
125
150
175
0.01
0.1
1
10
100
1000
Case Tempature, TC (°C)
Reverse Voltage, VR (V)
Company reserves the right to improve product design , functions and reliability without notice.
REV:
Page 2
QW-BSCXX
Comchip Technology CO., LTD.
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