CHT8050PT [CHENMKO]
EPITAXIAL Transistor; 外延晶体管
| 型号： | CHT8050PT |
| 厂家： | 
CHENMKO ENTERPRISE CO. LTD. |
| 描述： | EPITAXIAL Transistor |
| 文件： | 总3页 (文件大小：248K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CHENMKO ENTERPRISE CO.,LTD
CHT8050PT
SURFACE MOUNT
EPITAXIAL Transistor
VOLTAGE 20 Volts CURRENT 700 mAmpere
FEATURE
* Small surface mounting type. (SOT-23)
* High DC current .
SOT-23
CONSTRUCTION
(1)
(2)
* NPN transistors in one package.
(3)
MARKING
(
)
* D805
* E805
(
)
.055 1.40
.028 0.70
(
)
(
)
.047 1.20
.020 0.50
(
)
.103 2.64
.086 (2.20)
(
)
.045 1.15
(3)
C
CIRCUIT
(
)
.033 0.85
(1)
B
E(2)
SOT-23
Dimensions in millimeters
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS
VCBO collector-base voltage open emitter
MIN.
MAX.
UNIT
−
−
−
−
−
25
20
5
V
VCEO
VEBO
IC
collector-emitter voltage
emitter-base voltage
collector current (DC)
total power dissipation
open base
V
open collector
V
700
mA
mW
Ptot
Tamb ≤ 25 °C; note 1
225
Tstg
Tj
storage temperature
−55
−
+150
150
°C
°C
°C
junction temperature
Tamb
operating ambient temperature
−55
+150
2008-01
Note
1. Transistor mounted on an FR4 printed-circuit board.
RATING CHARACTERISTIC CURVES ( CHT8050PT )
CHARACTERISTICS
amb = 25 °C unless otherwise speciped.
T
SYMBOL
V(BR)CBO
PARAMETER
CONDITIONS
IC = -10uA ; IE = 0A
IC = -1mA ; IB = 0A
IE = -10uA ; IC = 0A
VCB = 20V
MIN.
25
MAX.
UNIT
V
V
V
−
−
−
collector-base breakdown voltage
collector-emitter breakdown voltage
emitter-base breakdown voltage
collector cut-off current
V(BR)CEO
V(BR)EBO
ICBO
20
5
−
1.0
uA
VEB = 5V
−
100
500
500
1000
nA
IEBO
emitter cut-off current
hFE
DC current gain
= 150 mA; VCE = 1V
150
IC
VCEsat
VBEon
collector-emitter saturation
IC = 500 mA; IB = 50 mA
IC = 150 mA; VCE = 1.0V
VCB=-10V; f=1.0MHZ; IE=0
VCB=10V; Ic=20mA; f=100MHz
−
mV
mV
pF
−
base-emitter voltage
output capacitance
transition frequency
−
Ccb
10
−
150
fT
MHz
2. hFE: D Classification: 150~300
E Classification: 250~500
RATING CHARACTERISTIC CURVES ( CHT8050PT )
Figure 1. Collector-Emitter Saturation
Voltage vs Collector Current
Figure 2. Base-Emitter Saturation Voltage
vs Collector Current
10000
10000
IC/IB=10
IC/IB=10
1000
1000
Ta = 25oC
Ta = 25oC
100
10
100
10
0.1
1.0
10
100
1000
10000
0.1
1.0
10
100
1000
10000
COLLECTOR CURRENT, IC(A)
COLLECTOR CURRENT, IC(A)
Figure 3. DC Current Gain
1000
VCE=1.0V
100
10
0.1
1.0
10
100
1000
10000
COLLECTOR CURRENT, IC(A)
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