CHT3019PTGP [CHENMKO]
Transistor,;
| 型号： | CHT3019PTGP |
| 厂家： | 
CHENMKO ENTERPRISE CO. LTD. |
| 描述： | Transistor, |
| 文件： | 总2页 (文件大小：89K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CHENMKO ENTERPRISE CO.,LTD
CHT3019PT
SURFACE MOUNT
NPN Switching Transistor
VOLTAGE 80 Volts CURRENT 1 Ampere
APPLICATION
* Telephony and proferssional communction equipment.
* Other switching applications.
FEATURE
SOT-23
* Small surface mounting type. (SOT-23)
* Suitable for high packing density.
* High saturation current capability.
* Voltage controlled small signal switch.
(1)
(2)
CONSTRUCTION
(3)
* NPN Switching Transistor
MARKING
* HT
(
)
(
)
.055 1.40
.028 0.70
(
)
(
)
.047 1.20
.020 0.50
(
)
.103 2.64
.086 (2.20)
(
)
.045 1.15
3
CIRCUIT
(
)
.033 0.85
1
2
Dimensions in inches and (millimeters)
SOT-23
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS
VCBO collector-base voltage open emitter
MIN.
MAX.
120
UNIT
−
−
−
−
−
V
V
V
VCEO
VEBO
IC
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
open base
80
open collector
7.0
1000
1500
mA
ICM
mA
350
mW
Ptot
Tstg
total power dissipation
−
Tamb ≤ 25 °C; note 1
−65
+150
°C
storage temperature
Tj
junction temperature
−
150
°C
°C
Tamb
operating ambient temperature
−65
+150
Note
1. Transistor mounted on an FR4 printed-circuit board.
2004-9
RATING CHARACTERISTIC CURVES ( CHT3019PT )
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
Note
PARAMETER
CONDITIONS
note 1
VALUE
UNIT
thermal resistance from junction to ambient
357
K/W
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb = 25 °C unless otherwise speciÞed.
SYMBOL
ICBO
IEBO
PARAMETER
collector cut-off current
emitter cut-off current
CONDITIONS
IE = 0; VCB = 90 V
MIN.
MAX.
10
10
UNIT
−
−
nA
nA
IC = 0; VEB = 5 V
50
90
IC = 0.1 mA; VCE
−
= 10V
hFE
DC current gain
IC = 1.0 mA; VCE = 10V
−
300
−
I = 150 mA; VCE
100
50
=10V
C
IC = 500 mA; VCE = 10V
IC = 1.0 A; VCE = 10V
−
15
V
V
−
−
0.2
0.5
VCEsat
collector-emitter saturation
voltage
IC = 150 mA; IB = 15 mA
IC =-500 mA; IB = 50 mA
VBEsat
−
V
base-emitter saturation voltage IC =150 mA; IB =15 mA
1.1
12
60
−
−
collector capacitance
emitter capacitance
Cob
Cib
IE = ie = 0; VCB = 1 0 V; f = 1 MHz
pF
pF
IC = ic = 0; VBE = 500 mV;
f = 1 MHz
IC = 50 mA; VCE = 1 0 V;
f = 1.0 MHz
fT
transition frequency
100
−
MHz
F
noise Þgure
I
C = 100 µA; V
; R = 1 kΩ;
CE= 1 0 V
S
−
4.0
dB
Hz
f = 1.0k
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