CHT3019ZPT [CHENMKO]
NPN Switching Transistor; NPN开关晶体管
| 型号： | CHT3019ZPT |
| 厂家： | 
CHENMKO ENTERPRISE CO. LTD. |
| 描述： | NPN Switching Transistor |
| 文件： | 总2页 (文件大小：123K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CHENMKO ENTERPRISE CO.,LTD
CHT3019ZPT
SURFACE MOUNT
NPN Switching Transistor
VOLTAGE 80 Volts CURRENT 1 Ampere
APPLICATION
* Telephony and proferssional communction equipment.
* Other switching applications.
FEATURE
SC-73/SOT-223
* Suitable for high packing density.
* High saturation current capability.
* Voltage controlled small signal switch.
1.65+0.15
6.50+0.20
3.00+0.10
0.90+0.05
2.0+0.3
CONSTRUCTION
* NPN Switching Transistor
0.9+0.2
MARKING
0.70+0.10
0.27+0.05
0.01~0.10
BCP56
0.70+0.10
2.30+0.1
0.70+0.10
4.60+0.1
1
3
2
1 Base
2 Emitter
C(3)
CIRCUIT
3 Collector ( Heat Sink )
(1)
B
E(2)
Dimensions in millimeters
SC-73/SOT-223
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS
VCBO collector-base voltage open emitter
MIN.
MAX.
120
UNIT
−
−
−
−
−
V
V
V
VCEO
VEBO
IC
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
open base
80
open collector
7.0
1000
1500
mA
mA
ICM
2.0
W
Ptot
Tstg
total power dissipation
−
Tamb ≤ 25 °C; note 1
−65
+150
°C
storage temperature
Tj
junction temperature
−
150
°C
°C
Tamb
operating ambient temperature
−65
+150
Note
1. Transistor mounted on an FR4 printed-circuit board.
2004-7
RATING CHARACTERISTIC CURVES ( CHT3019ZPT )
THERMAL CHARACTERISTICS
SYMBOL
Rth j-a
Note
PARAMETER
CONDITIONS
note 1
VALUE
UNIT
thermal resistance from junction to ambient
357
K/W
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
Tamb = 25 °C unless otherwise speciÞed.
SYMBOL
ICBO
IEBO
PARAMETER
collector cut-off current
emitter cut-off current
CONDITIONS
IE = 0; VCB = 90 V
MIN.
MAX.
10
10
UNIT
−
−
nA
nA
IC = 0; VEB = 5 V
50
90
IC = 0.1 mA; VCE
−
= 10V
hFE
DC current gain
IC = 1.0 mA; VCE = 10V
−
300
−
I = 150 mA; VCE
100
50
=10V
C
IC = 500 mA; VCE = 10V
IC = 1.0 A; VCE = 10V
−
15
V
V
−
−
0.2
0.5
VCEsat
collector-emitter saturation
voltage
IC = 150 mA; IB = 15 mA
IC =-500 mA; IB = 50 mA
VBEsat
−
V
base-emitter saturation voltage IC =150 mA; IB =15 mA
1.1
12
60
−
−
collector capacitance
emitter capacitance
Cob
Cib
IE = ie = 0; VCB = 1 0 V; f = 1 MHz
pF
pF
IC = ic = 0; VBE = 500 mV;
f = 1 MHz
IC = 50 mA; VCE = 1 0 V;
f = 1.0 MHz
fT
transition frequency
100
−
MHz
F
noise Þgure
I
C = 100 µA; V
; RS = 1 kΩ;
CE= 1 0 V
−
4.0
dB
Hz
f = 1.0k
相关型号：
©2020 ICPDF网 联系我们和版权申明