CHT3055ZPT [CHENMKO]
NPN SILICON Transistor; NPN硅晶体管
| 型号： | CHT3055ZPT |
| 厂家： | 
CHENMKO ENTERPRISE CO. LTD. |
| 描述： | NPN SILICON Transistor |
| 文件： | 总2页 (文件大小：140K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CHENMKO ENTERPRISE CO.,LTD
CHT3055ZPT
SURFACE MOUNT
NPN SILICON Transistor
VOLTAGE 60 Volts CURRENT 6 Ampere
APPLICATION
* Telephony and proferssional communction equipment.
* Other switching applications.
SC-73/SOT-223
FEATURE
* Small flat package. ( SC-73/SOT-223 )
1.65+0.15
6.50+0.20
3.00+0.10
* Suitable for high packing density.
* High saturation current capability.
0.90+0.05
2.0+0.3
CONSTRUCTION
0.9+0.2
*NPN SILICON Transistor
0.70+0.10
0.27+0.05
0.01~0.10
0.70+0.10
2.30+0.1
0.70+0.10
4.60+0.1
MARKING
* ZDN
1
3
2
1 Base
2 Emitter
3 Collector ( Heat Sink )
(3)
C
CIRCUIT
(1)
B
E(2)
Dimensions in millimeters
SC-73/SOT-223
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
VCBO
PARAMETER
collector-base voltage
CONDITIONS
open emitter
MIN.
MAX.
UNIT
−
−
−
−
V
V
100
60
VCEO
VEBO
IC
collector-emitter voltage
emitter-base voltage
collector current (DC)
Base Current
open base
open collector
V
7.0
6.0
A
A
−
−
IB
3.0
Ptot
total power dissipation
2
Tamb ≤ 25 °C; note 1
W
Tstg
−65
+150
°C
storage temperature
Tj
junction temperature
−
150
°C
°C
Tamb
operating ambient temperature
−65
+150
Note
1. Transistor mounted on an FR4 printed-circuit board.
2004-7
RATING CHARACTERISTIC CURVES ( CHT3055ZPT )
CHARACTERISTICS
amb = 25 °C unless otherwise speciÞed.
T
SYMBOL
ICEO
PARAMETER
CONDITIONS
MIN.
MAX.
700
5.0
UNIT
uA
V
−
−
CE=30 V
collector cut-off current
IEBO
emitter cut-off current
VEB=7.0V
mA
hFE
DC current gain
70
20
I = 4.0A; VCE
C
= 4V
−
5.0
IC =6.0A; VCE = 4V
VCEsat
collector-emitter saturation
voltage
IC=4.0A,IB=400mA
IC = 4.0A; VCE = 4V
−
1.1
V
VBEON
fT
base-emitter saturation voltage
transition frequency
1.5
V
−
−
MHz
IC = 500mA; VCE = 1 0 V;
f = 1.0MHz
2.5
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