CHEMT3GP [CHENMKO]
Transistor,;
| 型号： | CHEMT3GP |
| 厂家： | 
CHENMKO ENTERPRISE CO. LTD. |
| 描述： | Transistor, |
| 文件： | 总3页 (文件大小：337K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CHENMKO ENTERPRISE CO.,LTD
CHEMT3GP
SURFACE MOUNT
Dual Silicon Transistor
VOLTAGE 50 Volts CURRENT 150 mAmpere
APPLICATION
* Small Signal Amplifier .
FEATURE
* Small surface mounting type. (SOT-563)
* Low saturation voltage VCE(sat)=-0.5V(max.)(IC=50mA)
* Low cob. Cob=4.0pF(Typ.)
SOT-563
* PC= 150mW (Total),120mW per element must not be exceeded.
* High saturation current capability.
* Two the 2SA1037K in one package.
* PNP Silicon Transistor
(1)
(5)
(4)
0.50
1.5~1.7
0.50
0.9~1.1
(3)
0.15~0.3
MARKING
1.1~1.3
* T3
0.5~0.6
0.09~0.18
3
4
1
5
CIRCUIT
1.5~1.7
SOT-563
Dimensions in millimeters
2SA1037K LIMITING VALUES
MAXIMUM RATINGES ( At TA = 25 C unless otherwise noted )
RATINGS
CONDITION
Open Emitter
SYMBOL
VCBO
MIN.
-
MAX.
-60
UNITS
Volts
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current DC
Open Base
VCEO
VEBO
IC
-
-50
-6
Volts
Volts
mAmps
mAmps
mAmps
mW
Open Collector
-
-
-150
-150
-15
Peak Collector Current
Peak Base Current
ICM
-
-
IBM
Total Power Dissipation
Storage Temperature
Junction Temperature
Operating Ambient Temperature
TA ≤ 25OC; Note 1
PTOT
TSTG
TJ
-
150
-55
-
+150
+150
+150
oC
oC
TAMB
-55
oC
Note
2004-07
1. Transistor mounted on ceramic substrate 50mmX50mmx0.8t.
2. Measured at Pulse Width 300 us, Duty Cycle 2%.
RATING CHARACTERISTIC CURVES ( CHEMT3GP )
2SA1037K CHARACTERISTICS
ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted )
PARAMETERS
CONDITION
IC=-50uA
SYMBOL
BVCBO
BVCEO
BVEBO
MIN.
-60
TYPE
MAX.
UNITS
Volts
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
-
-
-
-
-50
Volts
IC=-1mA
IE=-50uA
-6
-
Volts
uA
-
-
-
-
Collector Cut-off Current
Emitter Cut-off Current
IE=0; VCB=-60V
IC=0; VEB=-6V
ICBO
-0.1
-0.1
IEBO
-
VCE=-6V
IC=-1mA
DC Current Gain
hFE
VCEsat
Cob
120
-
-
560
-0.5
5.0
Collector-Emitter Saturation Voltage
IC=-50mA; IB=-5mA
-
-
Volts
pF
IE=ie=0; VCB=-12V;
f=1MHz
Output Collector Capacitance
4
IE=2mA; VCE=-12V;
f=100MHz
Transition Frequency
fT
-
140
-
MHz
RATING CHARACTERISTIC CURVES ( CHEMT3GP )
2SA1037K Typical Electrical Characteristics
Fig.3 DC current gain vs.
collector current (1)
Fig.2 Grounded emitter output
Fig.1 Grounded emitter propagation
characteristics
characteristics
−35.0
−10
500
−50
V
CE=−6V
V
CE=−5V
−3V
Ta=25˚C
Ta=25˚C
Ta=100˚C
25˚C
−31.5
−28.0
−24.5
−21.0
−17.5
−14.0
−10.5
−7.0
−20
−10
−1V
−40˚C
−8
−6
−4
−2
200
100
−5
−2
−1
−0.5
50
−3.5µA
−0.2
−0.1
I
B=0
0
−0.4
−0.8
−1.2
−1.6 −2.0
−0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 -1.8
−0.2 −0.5 −1 −2
−5 −10 −20 −50 −100
(mA)
BASE TO EMITTER VOLTAGE : VBE (V)
COLLECTOR CURRENT : I
C
BASE TO EMITTER VOLTAGE : VBE (V)
Fig.6 Collector-emitter saturation
Fig.4 DC current gain vs.
Fig. 5 Collector-emitter saturation
voltage vs. collector current
collector current (2)
voltage vs. collector current
500
−1
−1
Ta=25˚C
lC/lB=10
Ta=100˚C
25˚C
V
CE=−6V
−0.5
−0.5
−40˚C
200
100
50
−0.2
−0.1
−0.2
−0.1
I
C/I
B
=
50
Ta=100˚C
25˚C
−40˚C
20
10
−0.05
−0.05
−0.2 −0.5 −1 −2
−5 −10 −20 −50 −100
(mA)
−0.2 −0.5 −1 −2
−5 −10 −20 −50 −100
(mA)
−0.2 −0.5 −1 −2
−5 −10 −20 −50 −100
COLLECTOR CURRENT : I
C
COLLECTOR CURRENT : I
C
COLLECTOR CURRENT : I (mA)
C
Fig.7 Gain bandwidth product vs.
emitter current
1000
500
Ta=25˚C
V
CE=−12V
200
100
50
0.5
1
2
5
10 20
50 100
EMITTER CURRENT : I (mA)
E
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