CHEMX18PT [CHENMKO]
Dual Silicon Transistor; 双硅晶体管
| 型号： | CHEMX18PT |
| 厂家： | 
CHENMKO ENTERPRISE CO. LTD. |
| 描述： | Dual Silicon Transistor |
| 文件： | 总4页 (文件大小：126K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CHENMKO ENTERPRISE CO.,LTD
CHEMX18PT
SURFACE MOUNT
Dual Silicon Transistor
VOLTAGE 15 Volts CURRENT 500 mAmpere
APPLICATION
* Small Signal Amplifier .
FEATURE
* Small surface mounting type. (SOT-563)
* Low saturation voltage VCE(sat)=0.25V(max.)(IC=200mA)
* Low cob. Cob=7.5pF(Typ.)
SOT-563
* PC= 150mW (Total),120mW per element must not be exceeded.
* High saturation current capability.
(1)
(5)
(4)
* Two the 2SC5585 in one package.
* NPN Silicon Transistor
0.50
1.5~1.7
0.50
0.9~1.1
(3)
0.15~0.3
MARKING
1.1~1.3
*X8
0.5~0.6
0.09~0.18
6
1
4
3
CIRCUIT
1.5~1.7
SOT-563
Dimensions in millimeters
2SC5585 LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS
MIN.
MAX.
UNIT
VCBO
V
Collector-base voltage
−
15
VCEO
VEBO
12
6
−
Collector-emitter voltage
Emitter-base voltage
V
V
−
500
mA
I C
−
−
DC Output current
NOTE.1
Icp
1000
NOTE.2
mW
OC
OC
−
−55
−
150
+150
150
PC
Total power dissipation
Storage temperature
TSTG
Junction temperature
TJ
Note
1. Single pulse Pw=1ms
2004-07
2. 120mW per element must not be exceeded.
Each terminal mounted on a recommended land.
RATING CHARACTERISTIC CURVES ( CHEMX18PT )
2SC5585 CHARACTERISTICS
amb = 25 °C unless otherwise speciÞed.
T
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
IC=1mA
12
BVCEO
BVCBO
V
V
V
−
−
−
Collector-emitter breakdown voltage
Collector-base breakdown voltage
−
IC=10uA
IE=10uA
15
6
Emitter-base breakdown voltage
BVEBO
ICBO
−
−
−
−
VCB=15V
100
100
680
250
−
nA
nA
−
Collector cut-off current
Emitter cut-off current
VEB=6V
IEBO
hFE
−
−
VCE=2V,IC=10mA
IC=200mA,IB=10mA
VCB=10V,IE=0mA,f=1MHZ
DC current gain
270
−
VCE(sat)
Collector-emitter saturation voltage
Collector output capacitance
90
mV
pF
−
−
Cob
f T
7.5
MHz
−
Transition frequency
320
VCE=2V,IE=-10mA,f=100MHZ
−
Note
1.Pulse test: tp≤300uS; δ≤0.02.
RATING CHARACTERISTIC CURVES ( CHEMX18PT )
2SC5585 Typical Electrical Characteristics
Fig.2 DC current gain vs. collector
current
Fig.1 Ground emitter propagation
characteristics
1000
Ta=125OC
1000
VCE=2V
pulsed
VCE=2V
pulsed
O
25 C
-40OC
100
100
10
1
10
O
O
O
1
1
1000
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
10
100
COLLECTOR CURRENT : IC(mA)
BASE TO EMITTER VOLTAGE : VBE(V)
Fig.3 Collector-emitter saturation voltage
vs. collector current ( I )
Fig.4 Collector-emitter saturation voltage
vs. collector current ( II )
1000
1000
O
IC/IB=20
pulsed
Ta=25 C
pulsed
100
10
1
100
Ta=125OC
Ta=25OC
Ta=-40OC
Ta=125OC
Ta=25OC
10
1
Ta=-40OC
1
1000
1
1000
10
100
10
100
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
RATING CHARACTERISTIC CURVES ( CHEMX18PT )
2SC5585 Typical Electrical Characteristics
Fig.5 Base-emitter saturation voltage
vs. collector current
Fig.6 Gain bandwidth product vs.
collector current
1000
1000
IC/IB=20
pulsed
VCE=2V
Ta=25OC
pulsed
Ta=-40OC
Ta=25OC
Ta=125OC
100
100
10
1
10
1
1
1000
10
100
1
1000
10
100
COLLECTOR CURRENT : IC(mA)
EMITTER CURRENT : IE(mA)
Fig.7 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
1000
IE=0A
f=1MHZ
O
Ta=25 C
100
Cib
10
Cob
1
1
1000
COLLECTOR TO BASE VOLTAGE : VCB(V)
10
100
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