CHEMX1PT [CHENMKO]
Dual Silicon Transistor; 双硅晶体管
| 型号： | CHEMX1PT |
| 厂家： | 
CHENMKO ENTERPRISE CO. LTD. |
| 描述： | Dual Silicon Transistor |
| 文件： | 总3页 (文件大小：142K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CHENMKO ENTERPRISE CO.,LTD
CHEMX1PT
SURFACE MOUNT
Dual Silicon Transistor
VOLTAGE 50 Volts CURRENT 150 mAmpere
APPLICATION
* Small Signal Amplifier .
FEATURE
* Small surface mounting type. (SOT-563)
* Low saturation voltage VCE(sat)=0.4V(max.)(IC=50mA)
* Low cob. Cob=2.0pF(Typ.)
SOT-563
* PC= 150mW (Total),120mW per element must not be exceeded.
* High saturation current capability.
(1)
(5)
(4)
* Two the 2SC2412K in one package.
* NPN Silicon Transistor
0.50
1.5~1.7
0.50
0.9~1.1
(3)
0.15~0.3
MARKING
1.1~1.3
* X1
0.5~0.6
0.09~0.18
6
1
4
3
CIRCUIT
1.5~1.7
SOT-563
Dimensions in millimeters
2SC2412K LIMITING VALUES
MAXIMUM RATINGES ( At TA = 25oC unless otherwise noted )
RATINGS
CONDITION
Open Emitter
SYMBOL
VCBO
MIN.
-
MAX.
60
UNITS
Volts
Collector - Base Voltage
Collector - Emitter Voltage
Emitter - Base Voltage
Collector Current DC
Open Base
VCEO
VEBO
IC
-
50
7
Volts
Volts
mAmps
mAmps
mAmps
mW
Open Collector
-
-
150
150
15
Peak Collector Current
Peak Base Current
ICM
-
-
IBM
Total Power Dissipation
Storage Temperature
Junction Temperature
Operating Ambient Temperature
TA ≤ 25OC; Note 1
PTOT
TSTG
TJ
-
150
+150
+150
+150
-55
-
oC
oC
TAMB
-55
oC
Note
1. Transistor mounted on ceramic substrate 50mmX50mmx0.8t.
2004-07
RATING CHARACTERISTIC CURVES ( CHEMX1PT )
2SC2412K CHARACTERISTICS
ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted )
PARAMETERS
CONDITION
IC=50uA
SYMBOL
BVCBO
BVCEO
BVEBO
MIN.
60
TYPE
MAX.
UNITS
Volts
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
-
-
-
-
50
Volts
IC=1mA
IE=50uA
7
-
Volts
uA
-
-
-
-
Collector Cut-off Current
Emitter Cut-off Current
IE=0; VCB=60V
IC=0; VEB=7V
ICBO
ICEO
0.1
0.1
-
VCE=6V
IC=1mA
DC Current Gain
hFE
VCEsat
Cob
120
-
-
560
0.4
3.5
Collector-Emitter Saturation Voltage
Output Collector Capacitance
IC=50mA; IB=5mA
-
-
Volts
pF
IE=ie=0; VCB=12V;
f=1MHz
2
IC=2mA; VCE=12V;
f=100MHz
Transition Frequency
fT
-
180
-
MHz
RATING CHARACTERISTIC CURVES ( CHEMX1PT )
2SC2412K Typical Electrical Characteristics
Fig.3 DC current gain vs.
collector current (1)
Fig.2 Grounded emitter output
characteristics
Fig.1 Grounded emitter propagation
characteristics
100
500
50
Ta=25OC
Ta=25OC
0.50mA
V
CE=6V
20
10
5
80
60
40
V
CE=5V
3V
1V
200
100
50
0.30mA
0.25mA
0.20mA
0.15mA
C
O
2
1
100
=
Ta
0.10mA
0.05mA
0.5
20
0
20
10
0.2
0.1
IB=0A
0
0.4
0.8
1.2
1.6
2.0
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
BASE TO EMITTER VOLTAGE : VBE (V)
0.2 0.5
1
2
5
10 20 50 100 200
(mA)
COLLECTOR CURRENT : I
C
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.6 Collector-emitter saturation
Fig.4 DC current gain vs.
Fig. 5 Collector-emitter saturation
voltage vs. collector current
collector current (2)
voltage vs. collector current
500
0.5
0.5
IC/IB=10
Ta=25
VCE=5V
Ta=100OC
25OC
0.2
0.2
200
100
50
-55OC
I
C/I
B
=50
Ta=100OC
25OC
20
0.1
0.1
10
-55OC
0.05
0.05
0.02
0.01
0.02
0.01
20
10
0.2 0.5
1
2
5
10 20 50 100
(mA)
0.2 0.5
1
2
5
10 20 50 100 200
(mA)
0.2 0.5
1
2
5
10 20 50 100 200
(mA)
COLLECTOR CURRENT : I
C
COLLECTOR CURRENT : I
C
COLLECTOR CURRENT : I
C
Fig.8 Base-collector time constant
Fig.7 Gain bandwidth product vs.
emitter current
vs. emitter current
Ta=25OC
Ta=25O
f=32MH
Z
VCE=6V
200
100
50
500
200
V
CB=6V
100
50
20
10
0.5
1
2
5
10 20
50 100
0.2
0.5
1
2
5
(mA)
10
EMITTER CURRENT : I (mA)
E
EMITTER CURRENT : I
E
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