CHEMT18PT [CHENMKO]
Dual Silicon Transistor; 双硅晶体管
| 型号： | CHEMT18PT |
| 厂家： | 
CHENMKO ENTERPRISE CO. LTD. |
| 描述： | Dual Silicon Transistor |
| 文件： | 总4页 (文件大小：130K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CHENMKO ENTERPRISE CO.,LTD
CHEMT18PT
SURFACE MOUNT
Dual Silicon Transistor
VOLTAGE 12 Volts CURRENT 0.5 Ampere
APPLICATION
* Small Signal Amplifier .
FEATURE
* Small surface mounting type. (SOT-563)
* Low saturation voltage VCE(sat)=-0.25V(max.)(IC=200mA)
* Low cob. Cob=6.5pF(Typ.)
SOT-563
* PC= 150mW (Total),120mW per element must not be exceeded.
* High saturation current capability.
* Two the 2SA2018 in one package.
* PNP Silicon Transistor
(1)
(5)
0.50
0.50
0.9~1.1
1.5~1.7
(4)
(3)
0.15~0.3
MARKING
1.1~1.3
* T8
0.5~0.6
0.09~0.18
6
1
4
3
CIRCUIT
1.5~1.7
SOT-563
Dimensions in millimeters
2SA2018 LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS
MIN.
MAX.
-15
UNIT
VCBO
V
Collector-base voltage
−
VCEO
VEBO
IC
-12
-6
−
Collector-emitter voltage
Emitter-base voltage
V
V
−
−
-500
-1000
mA
DC Output current
NOTE.1
NOTE.2
ICP
−
−
−55
−
Pc
power dissipation
150
mW
OC
TSTG
Storage temperature
+150
OC
Junction temperature
TJ
150
Note
1. Single Pulse Pw=1ms
2004-07
2. 120mW per element must not be exceeded
Each teminal mounted on a recommended land.
RATING CHARACTERISTIC CURVES ( CHEMT18PT )
2SA2018 CHARACTERISTICS
amb = 25 °C unless otherwise speciÞed.
T
SYMBOL
PARAMETER
CONDITIONS
IC=-1mA
MIN.
-12
TYP.
MAX.
UNIT
BVCEO
BVCBO
V
V
V
−
−
−
Collector-emitter breakdown voltage
Collector-base breakdown voltage
-15
IC=-10uA
−
Emitter-base breakdown voltage
IE=-10uA
VCB=-15V
-6
−
BVEBO
ICBO
−
−
−
-100
-100
680
nA
nA
−
Collector cut-off current
Emitter cut-off current
IEBO
hFE
−
−
VEB=-6V
DC current gain
270
−
−
VCE=-2V,IC=-10mA
IC=-200mA,IB=-10mA
VCB=-10V,IE=0mA,f=1MHZ
VCE(sat)
-250
Collector-emitter saturation voltage
Collector output capacitance
mV
pF
-100
6.5
Cob
f T
−
−
−
MHz
−
Transition frequency
VCE=-2V,IE=10mA,f=100MHZ
260
Note
1.Pulse test: tp≤300uS; δ≤0.02.
RATING CHARACTERISTIC CURVES ( CHEMT18PT )
2SA2018 Typical Electrical Characteristics
Fig.2 DC current gain vs. collector
current
Fig.1 Ground emitter propagation
characteristics
1000
1000
100
10
Ta=125OC
VCE=2V
pulsed
VCE=2V
pulsed
25OC
-40OC
100
10
O
O
O
1
1
1
1000
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
10
100
COLLECTOR CURRENT : IC(mA)
BASE TO EMITTER VOLTAGE : VBE(V)
Fig.3 Collector-emitter saturation voltage
Fig.4 Collector-emitter saturation voltage
vs. collector current ( II )
vs. collector current ( I )
1000
O
1000
Ta=25 C
pulsed
IC/IB=20
pulsed
100
10
1
100
Ta=125OC
Ta=25OC
Ta=-40OC
Ta=125OC
Ta=25OC
10
1
Ta=-40OC
1
1000
1
1000
10
100
10
100
COLLECTOR CURRENT : I
C
(mA)
COLLECTOR CURRENT : I
C
(mA)
RATING CHARACTERISTIC CURVES ( CHEMT18PT )
2SA2018 Typical Electrical Characteristics
Fig.5 Base-emitter saturation voltage
Fig.6 Gain bandwidth product vs.
vs. collector current
collector current
1000
1000
IC/IB=20
VCE=2V
Ta=25OC
pulsed
pulsed
Ta=-40OC
Ta=25OC
Ta=125OC
100
100
10
1
10
1
1
1000
10
100
1
1000
10
100
COLLECTOR CURRENT : IC(mA)
EMITTER CURRENT : IE(mA)
Fig.7 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
1000
IE=0A
f=1MHZ
O
Ta=25 C
100
Cib
10
Cob
1
1
1000
COLLECTOR TO BASE VOLTAGE : VCB(V)
10
100
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