CHEMH4PT [CHENMKO]
Dual Digital Silicon Transistor; 双数字硅晶体管
| 型号： | CHEMH4PT |
| 厂家： | 
CHENMKO ENTERPRISE CO. LTD. |
| 描述： | Dual Digital Silicon Transistor |
| 文件： | 总3页 (文件大小：147K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CHENMKO ENTERPRISE CO.,LTD
CHEMH4PT
SURFACE MOUNT
Dual Digital Silicon Transistor
VOLTAGE 50 Volts CURRENT 100 mAmpere
APPLICATION
* Switching circuit, Inverter, Interface circuit, Driver circuit.
FEATURE
* Small surface mounting type. (SOT-563)
* High current gain.
SOT-563
* Suitable for high packing density.
* Low colloector-emitter saturation.
* High saturation current capability.
* Both the CHDTC114T in one package.
* Built in bias resistor(R1=10kΩ, Typ. )
(1)
(5)
(4)
0.50
1.5~1.7
0.50
0.9~1.1
(3)
0.15~0.3
MARKING
1.1~1.3
* H4
0.5~0.6
0.09~0.18
3
4
1
6
1.5~1.7
CIRCUIT
R1
R1
SOT-563
Dimensions in millimeters
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER CONDITIONS
Supply voltage
MIN.
MAX.
UNIT
VCC
−
50
V
V
VIN
Input voltage
-5
IO
−
100
100
150
+150
150
625
DC Output current
mA
−
IC(Max.)
PTOT
TSTG
TJ
Tamb ≤ 25 OC, Note 1
−
Total power dissipation
Storage temperature
Junction temperature
Thermal resistance
mW
OC
−55
−
OC
RθJ-S
−
junction - Ambient Air
OC/W
Note
1. Transistor mounted on an FR4 printed-circuit board.
2004-07
RATING CHARACTERISTIC ( CHEMH4PT )
CHARACTERISTICS
amb = 25 °C unless otherwise speciÞed.
T
SYMBOL
PARAMETER
CONDITIONS
IC=50uA
MIN.
50
TYP.
MAX.
UNIT
−
−
BVCBO
BVCEO
Collector-base breakdown voltage
−
−
−
V
V
V
50
Collector-emitter breakdown voltage IC=1.0mA
IE=50uA
BVEBO
ICBO
Emitter-base breakdown voltage
5.0
−
−
−
−
−
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current gain
VCB=50V
0.5
0.5
0.3
600
13.0
−
uA
uA
V
IEBO
VEB=4V
−
VCE(sat)
IC/IB=1mA/0.1mA
IC=1mA; VCE=5.0V
−
hFE
R1
f T
100
7.0
−
250
10.0
250
KΩ
Input resistor
Transition frequency
IE=-5mA, VCE=10.0V
MHz
f=100MHz
Note
1.Pulse test: tp≤300uS; δ≤0.02.
RATING CHARACTERISTIC CURVES ( CHEMH4PT )
Typical Electrical Characteristics
Fig.1 Input voltage vs. output current
Fig.2 Output current vs. input voltage
(ON characteristics)
(OFF characteristics)
10
100m
V
CC=5V
VO=0.2V
Ta 75OC
=
10m
1m
25OC
-25OC
O
=-
Ta 25 C
25OC
1
75OC
100u
10u
1u 0
1
2
3
4
5
6
7
8
9
10
100m
0
10m
20m
30m
40m
50m
INPUT VOLTAGE : VI(off) (V)
OUTPUT CURRENT : I
O
(A)
Fig.3 DC current gain vs. output
Fig.4 Output voltage vs. output
current
current
1k
1
V
O
=10V
lO/lI=10
Ta= 75OC
25OC
Ta= 75OC
25OC
100m
100
10
-25OC
-25OC
10m
1m
10
1m
0
10m
20m
30m
40m
50m
10m
OUTPUT CURRENT : I
100m
O
(A)
OUTPUT CURRENT : IO (A)
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