CHDTA113TUPT [CHENMKO]
PNP Digital Silicon Transistor; PNP数字硅晶体管
| 型号： | CHDTA113TUPT |
| 厂家： | 
CHENMKO ENTERPRISE CO. LTD. |
| 描述： | PNP Digital Silicon Transistor |
| 文件： | 总3页 (文件大小：94K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CHENMKO ENTERPRISE CO.,LTD
CHDTA113TUPT
SURFACE MOUNT
PNP Digital Silicon Transistor
VOLTAGE 50 Volts CURRENT 100 mAmpere
APPLICATION
* Switching circuit, Inverter, Interface circuit, Driver circuit.
FEATURE
* Small surface mounting type. (SC-70/SOT-323)
* High current gain.
SC-70/SOT-323
* Suitable for high packing density.
* Low colloector-emitter saturation.
* High saturation current capability.
* Internal isolated PNP transistors in one package.
* Built in bias resistor(R1=1.0kΩ, Typ. )
0.65
1.3±0.1
2.0±0.2
0.65
0.3±0.1
CONSTRUCTION
1.25±0.1
* One PNP transistors and bias of thin-film resistors in one
package.
MARKING
* TU7
0.8~1.1
0.05~0.2
0~0.1
0.1Min.
E
B
2
1
2.0~2.45
CIRCUIT
TR
R1
3
C
SC-70/SOT-323
Dimensions in millimeters
LIMITING VALUES
In accordance with the Absolute Maxuimm Rating System (IEC60134).
VALUE
SYMBOL
PARAMETER
CONDITIONS
UNIT
VCBO
Collector-Base voltage
-50
V
-50
V
VCEO
VEBO
Collector-Emitter voltage
Emitter-Base voltage
-5
V
IC(Max.)
PD
Collector current
-100
mA
Tamb ≤ 25 OC, Note 1
Power dissipation
Storage temperature
Junction temperature
200
mW
OC
-55 ~ +150
-55 ~ +150
TSTG
TJ
OC
OC/W
RθJ-S
, Note 1
Thermal resistance
junction - soldering point 140
Note
2005-06
1. Transistor mounted on an FR4 printed-circuit board.
RATING CHARACTERISTIC ( CHDTA113TUPT )
CHARACTERISTICS
amb = 25 °C unless otherwise speciÞed.
T
SYMBOL
PARAMETER
CONDITIONS
MIN.
-50.0
TYP.
MAX.
UNIT
−
−
−
−
−
BVCBO
BVCEO
BVEBO
Collector-Base breakdown voltage
IC= -50uA
V
V
V
V
Collector-Emitter breakdown voltage IC= -1mA
-50.0
-5.0
−
IE= -50uA
−
Emitter-Base breakdown voltage
IC= -5mA; IB= -0.25mA
−
−
−
VCE(sat)
ICBO
Collector-Emitter Saturation voltage
Collector-Base current
Emitter-Base current
DC current gain
-0.3
-0.5
-0.5
600
−
uA
uA
VCB= -50V
IEBO
VEB= -4V
−
hFE
IC= -1mA; VCE= -5.0V
100
250
R1
Input resistor
0.7
1.0
1.3
KΩ
f T
Transition frequency
IE=5mA, VCB= -10.0V
f==100MHz
−
250
−
MHz
Note
1.Pulse test: tp≤300uS; δ ≤0.02.
RATING CHARACTERISTIC CURVES ( CHDTA113TUPT )
Typical Electrical Characteristics
Fig.1 DC current gain vs. collector
Fig.2 Collector-emitter saturation
current
voltage vs. collector current
1k
-1
lC/lB=10
V
CE=-5V
Ta=100OC
25OC
500
200
-500m
-200m
-40OC
100
50
-100m
-50m
100OC
25OC
-40OC
20
-20m
-10m
-5m
10
5
2
1
-2m
-1m
-100
-500−1m
-5m -10m
-50m -100m
-100u
-500u -1m
-5m -10m
-50m -100m
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I (A)
C
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