CHDTA113ZEGP [CHENMKO]
Transistor,;型号: | CHDTA113ZEGP |
厂家: | CHENMKO ENTERPRISE CO. LTD. |
描述: | Transistor, 晶体 晶体管 |
文件: | 总3页 (文件大小:92K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
CHENMKO ENTERPRISE CO.,LTD
CHDTA113TKPT
SURFACE MOUNT
PNP Digital Silicon Transistor
VOLTAGE 50 Volts CURRENT 100 mAmpere
APPLICATION
* Switching circuit, Inverter, Interface circuit, Driver circuit.
FEATURE
* Small surface mounting type. (SOT-23)
* High current gain.
SOT-23
* Suitable for high packing density.
* Low colloector-emitter saturation.
* High saturation current capability.
* Internal isolated PNP transistors in one package.
* Built in bias resistor(R1=1.0kΩ, Typ. )
(1)
(2)
(3)
CONSTRUCTION
* One PNP transistors and bias of thin-film resistors in one
package.
(
)
(
)
.055 1.40
.028 0.70
(
)
(
)
.047 1.20
.020 0.50
(
)
.103 2.64
MARKING
.086 (2.20)
* R1
E
B
(
)
.045 1.15
2
1
CIRCUIT
(
)
.033 0.85
TR
R1
3
SOT-23
Dimensions in inches and (millimeters)
C
LIMITING VALUES
In accordance with the Absolute Maxuimm Rating System (IEC60134).
VALUE
SYMBOL
PARAMETER
CONDITIONS
UNIT
VCBO
Collector-Base voltage
-50
-50
-5
V
V
VCEO
VEBO
Collector-Emitter voltage
Emitter-Base voltage
V
IC(Max.)
PD
Collector current
-100
200
mA
Tamb ≤ 25 OC, Note 1
Power dissipation
Storage temperature
Junction temperature
mW
OC
-55 ~ +150
-55 ~ +150
TSTG
TJ
OC
OC/W
RθJ-S
, Note 1
Thermal resistance
junction - soldering point 140
Note
1. Transistor mounted on an FR4 printed-circuit board.
2003-12
RATING CHARACTERISTIC ( CHDTA113TKPT )
CHARACTERISTICS
amb = 25 °C unless otherwise speciÞed.
T
SYMBOL
PARAMETER
CONDITIONS
MIN.
-50.0
TYP.
MAX.
UNIT
−
−
−
−
−
BVCBO
BVCEO
BVEBO
Collector-Base breakdown voltage
IC= -50uA
V
V
V
V
Collector-Emitter breakdown voltage IC= -1mA
-50.0
-5.0
−
IE= -50uA
−
Emitter-Base breakdown voltage
IC= -5mA; IB= -0.25mA
−
−
−
VCE(sat)
ICBO
Collector-Emitter Saturation voltage
Collector-Base current
Emitter-Base current
DC current gain
-0.3
-0.5
-0.5
600
−
uA
uA
VCB= -50V
IEBO
VEB= -4V
−
hFE
IC= -1mA; VCE= -5.0V
100
250
R1
Input resistor
0.7
1.0
1.3
KΩ
f T
Transition frequency
IE=5mA, VCB= -10.0V
f==100MHz
−
250
−
MHz
Note
1.Pulse test: tp≤300uS; δ ≤0.02.
RATING CHARACTERISTIC CURVES ( CHDTA113TKPT )
Typical Electrical Characteristics
Fig.1 DC current gain vs. collector
Fig.2 Collector-emitter saturation
current
voltage vs. collector current
1k
-1
lC/lB=10
V
CE=-5V
Ta=100OC
25OC
500
200
-500m
-200m
-40OC
100
50
-100m
-50m
100OC
25OC
-40OC
20
-20m
-10m
-5m
10
5
2
1
-2m
-1m
-100
-500−1m
-5m -10m
-50m -100m
-100u
-500u -1m
-5m -10m
-50m -100m
COLLECTOR CURRENT : I
C
(A)
COLLECTOR CURRENT : I (A)
C
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