CHDTA113ZKPT [CHENMKO]

PNP Digital Silicon Transistor; PNP数字硅晶体管
CHDTA113ZKPT
型号: CHDTA113ZKPT
厂家: CHENMKO ENTERPRISE CO. LTD.    CHENMKO ENTERPRISE CO. LTD.
描述:

PNP Digital Silicon Transistor
PNP数字硅晶体管

晶体 晶体管
文件: 总3页 (文件大小:181K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
CHENMKO ENTERPRISE CO.,LTD  
CHDTA113ZKPT  
SURFACE MOUNT  
PNP Digital Silicon Transistor  
VOLTAGE 50 Volts CURRENT 100 mAmpere  
APPLICATION  
* Switching circuit, Inverter, Interface circuit, Driver circuit.  
FEATURE  
* Small surface mounting type. (SOT-23)  
* High current gain.  
SOT-23  
* Suitable for high packing density.  
* Low colloector-emitter saturation.  
* High saturation current capability.  
* Internal isolated PNP transistors in one package.  
* Built in bias resistor(R1=1.0kΩ, Typ. )  
(1)  
(2)  
(3)  
CONSTRUCTION  
* One PNP transistors and bias of thin-film resistors in one  
package.  
(
)
(
)
.055 1.40  
.028 0.70  
(
)
(
)
.047 1.20  
.020 0.50  
(
)
.103 2.64  
.086 (2.20)  
Gnd  
2
In  
1
(
)
.045 1.15  
CIRCUIT  
(
)
.033 0.85  
R2  
R1  
TR  
3
Out  
SOT-23  
Dimensions in inches and (millimeters)  
LIMITING VALUES  
In accordance with the Absolute Maximum Rating System (IEC 60134).  
SYMBOL PARAMETER CONDITIONS  
Supply voltage  
MIN.  
MAX.  
-50  
UNIT  
VCC  
V
V
VIN  
Input voltage  
-10  
+5  
IO  
-100  
-100  
200  
+150  
150  
140  
DC Output current  
mA  
IC(Max.)  
PTOT  
TSTG  
TJ  
Tamb 25 OC, Note 1  
Total power dissipation  
Storage temperature  
Junction temperature  
Thermal resistance  
mW  
OC  
55  
OC  
junction - soldering point  
OC/W  
RθJ-S  
Note  
1. Transistor mounted on an FR4 printed-circuit board.  
2004-01  
RATING CHARACTERISTIC ( CHDTA113ZKPT )  
CHARACTERISTICS  
amb = 25 °C unless otherwise speciÞed.  
SYMBOL PARAMETER  
Input off voltage  
T
CONDITIONS  
MIN.  
-0.3  
TYP.  
MAX.  
UNIT  
VIoff)  
IO=-100uA; VCC=-5.0V  
IO=-20mA; VO=-0.3V  
IO=-10mA; II=-0.5mA  
V
V
V
VI(on)  
Input on voltage  
-3.0  
VO(on)  
II  
Output voltage  
Input current  
-0.3  
-7.2  
-0.5  
VI=-5V  
mA  
uA  
IC(off)  
hFE  
Output current  
DC current gain  
Input resistor  
VI=0V; VCC=-50V  
IO=-5.0mA; VO=-5.0V  
33  
0.7  
8
R1  
1.0  
1.3  
KΩ  
R2/R1  
f T  
Resistor ratio  
10  
12  
Transition frequency  
IC=-5mA, VCE=-10.0V  
250  
MHz  
f==100MHz  
Note  
1.Pulse test: tp300uS; δ≤0.02.  
RATING CHARACTERISTIC CURVES ( CHDTA113ZKPT )  
Typical Electrical Characteristics  
Fig.1 Input voltage vs. output current  
Fig.2 Output current vs. input voltage  
(ON characteristics)  
(OFF characteristics)  
-100  
-50  
-10m  
V
o
= -0.3V  
=
VCC 5V  
-5m  
-2m  
-20  
-10  
-1m  
-500u  
O
=
Ta 100 C  
25OC  
-200u  
-100u  
-5  
-2  
-40OC  
Ta=-40OC  
25OC  
-50u  
100OC  
-1  
-20u  
-10u  
-500m  
-5u  
-200m  
-100m  
-2u  
-1u  
-100u  
-1m  
-10m  
-100m  
0
-0.4  
-1.0  
-1.4  
-2.0  
-2.4  
-3.0  
OUTPUT CURRENT : I  
O
(A)  
INPUT VOLTAGE : VI(off) (V)  
Fig.3 DC current gain vs. output  
Fig.4 Output voltage vs. output  
current  
current  
-1  
1k  
lO/lI=20  
O =-  
V
5V  
-500m  
500  
Ta=100OC  
25OC  
Ta=100OC  
25OC  
-200m  
-100m  
200  
100  
50  
-40OC  
-40OC  
-50m  
-20m  
-10m  
20  
10  
-5m  
5
-2m  
-1m  
2
1
-100u  
-1m  
-10m  
-100m  
-100u  
-1m  
-10m  
-100m  
OUTPUT CURRENT : I (A)  
O
OUTPUT CURRENT : I (A)  
O

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