BAV16BPT [CHENMKO]
FAST SWITCHING DIODE ARRAY VOLTAGE 75 Volts CURRENT 150 mAmpere; 快速开关二极管阵列电压75伏特电流150 mAmpere
| 型号： | BAV16BPT |
| 厂家： | 
CHENMKO ENTERPRISE CO. LTD. |
| 描述： | FAST SWITCHING DIODE ARRAY VOLTAGE 75 Volts CURRENT 150 mAmpere |
| 文件： | 总2页 (文件大小：82K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
CHENMKO ENTERPRISE CO.,LTD
BAV16BPT
SURFACE MOUNT
FAST SWITCHING DIODE ARRAY
VOLTAGE 75 Volts CURRENT 150 mAmpere
APPLICATION
* Ultra high speed switching
* For general purpose switching application
FEATURE
* Small surface mounting type. (SOD-123)
* High speed. (TRR=1.5nSec Typ.)
SOD-123
* Suitable for high packing density.
* Maximum total power disspation is 200mW.
0.153(3.90)
0.140(3.55)
0.112(2.85)
0.098(2.50)
* Peak forward current is 300mA.
* Lead free devices
0.028(0.70)
0.018(0.45)
CONSTRUCTION
0.071(1.80)
0.055(1.40)
1
2
* Silicon epitaxial planar
MARKING
* VA
MAX.
0.008(0.2)
0.004(0.12)
0.02(0.5)
Tpy
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25oC ambient temperature unless otherwise specified.
Single phase, half wave, 60 HZ, resistive or inductive load.
For capacitive load, derate current by 20%.
Dimensions in inches and (millimeters)
SOD-123
MAXIMUM RATINGES ( At TA = 25oCo unless otherwise noted )
RATINGS
SYMBOL
BAV16BPT
UNITS
Maximum Non-Repetitive Peak Reverse Voltage
Maximum RMS Voltage
VRM
VRMS
100
53
Volts
Volts
Maximum Repetitive Peak Reverse and DC Blocking Voltage
Maximum Average Forward Rectified Current
VRRM, VDC
IO
75
Volts
150
mAmps
@t=1.0uSec
Non-Repetitive Peak Forward Surge Current
@t=1.0Sec
2.0
1.0
IFSM
Amps
Typical Junction Capacitance between Terminal (Note 1)
Maximum Reverse Recovery Time (Note 2)
CJ
2.0
4.0
pF
nSec
oC/W
oC
TRR
Thermal Resistance Junction to Ambient (Note 3)
Maximum Operating and Storage Temperature Range
R
JA
625
TJ,TSTG
-65 to +150
ELECTRICAL CHARACTERISTICS ( At TA = 25oC unless otherwise noted )
BAV16BPT
CHARACTERISTICS
SYMBOL
UNITS
Volts
@IF=1.0mA
@IF=10mA
@IF=50mA
@IF=150mA
0.715
0.855
1.00
Maximum Instantaneous Forward Voltage
VF
IR
1.25
@VR=20V
@VR=75V
@VR=25V, TJ=150 C
25
1.0
30
50
nAmps
uAmps
uAmps
uAmps
Maximum Average Reverse Current
O
O
@VR=75V, TJ=150 C
2002-9
NOTES : 1. Measured at 1.0 MHZ and applied reverse voltage of 0 volts.
2. Measured at applied froward current of 10mA and reverse current of 10mA.
3. Device mounted on FR-4 by 1 inch X 0.85 inch X 0.062 inch
4. ESD sensitive product handling required.
RATING CHARACTERISTIC CURVES ( BAV16BPT )
FIG. 1 - TYPICAL FORWARD CURRENT
DERAING CURVE
FIG. 2 - FORWARD CHARACTERISTICS
125
100
75
50
25
0
500
200
100
50
Ta=85o
C
50oC
25oC
0oC
20
10
5
-
30oC
2
1
0
25
50
75
100
125
150
0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
AMBIENT TEMPERATURE, (o
C
)
FORWARD VOLTAGE, (V)
FIG. 4 - REVERSE CHARACTERISTICS
FIG. 3 - TYPICAL JUNCTION CAPACITANCE
10u
1u
f=1MHz
Ta=100o
C
4
2
0
75oC
50oC
25oC
100
10
1
0oC
-
25oC
0.1
0
10
20
30
40
50
60
70
80
0
2
4
6
8
10
12
14
16
18
20
REVERSE VOLTAGE, (V)
REVERSE VOLTAGE, (V)
FIG. 5 - REVERSE RECOVERY TIME
FIG. 6 - REVERSE RECOVERY TIME MEASUREMENT CIRCUIT
10
9
8
7
6
5
4
3
2
1
0
0.01µF
D.U.T.
VR=6V
5
PULSE GENERATOR
OUTPUT 50
SAMPLING
OSCILLOSCOPE
50
0
1
2
3
4
5
6
7
8
9
10
FORWARD CURRENT, (mA)
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