CEU3252 [CET]
N-Channel Enhancement Mode Field Effect Transistor; N沟道增强型网络场效晶体管型号: | CEU3252 |
厂家: | CHINO-EXCEL TECHNOLOGY |
描述: | N-Channel Enhancement Mode Field Effect Transistor |
文件: | 总4页 (文件大小:111K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
CED3252/CEU3252
N-Channel Enhancement Mode Field Effect Transistor
FEATURES
30V, 25A, RDS(ON) = 28mΩ @VGS = 10V.
RDS(ON) = 39mΩ @VGS = 4.5V.
Super high dense cell design for extremely low RDS(ON)
.
High power and current handing capability.
Lead free product is acquired.
D
TO-251 & TO-252 package.
G
D
G
S
CEU SERIES
TO-252(D-PAK)
CED SERIES
TO-251(I-PAK)
S
ABSOLUTE MAXIMUM RATINGS T = 25 C unless otherwise noted
c
Parameter
Symbol
VDS
VGS
ID
Limit
Units
V
Drain-Source Voltage
30
Gate-Source Voltage
±20
25
V
Drain Current-Continuous
A
Drain Current-Pulsed a
IDM
100
A
Maximum Power Dissipation @ TC = 25 C
- Derate above 25 C
31
W
PD
0.25
-55 to 150
W/ C
C
Operating and Store Temperature Range
TJ,Tstg
Thermal Characteristics
Parameter
Symbol
RθJC
Limit
4
Units
C/W
C/W
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
RθJA
50
Rev 1. 2005.December
http://www.cetsemi.com
1
CED3252/CEU3252
Electrical Characteristics TA = 25 C unless otherwise noted
Parameter
Off Characteristics
Symbol
Test Condition
Min
Typ
Max
Units
Drain-Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate Body Leakage Current, Forward
Gate Body Leakage Current, Reverse
On Characteristics
BVDSS
IDSS
VGS = 0V, ID = 250µA
VDS = 30V, VGS = 0V
VGS = 20V, VDS = 0V
VGS = -20V, VDS = 0V
30
V
1
µA
nA
nA
IGSSF
IGSSR
100
-100
Gate Threshold Voltage
Static Drain-Source
VGS(th)
RDS(on)
VGS = VDS, ID = 250µA
VGS = 10V, ID = 7A
1.0
3.0
28
39
V
22
30
mΩ
mΩ
On-Resistance
VGS = 4.5V, ID = 3.5A
Dynamic Characteristics d
Forward Transconductance
Input Capacitance
gFS
VDS = 15V, ID = 7A
4
S
Ciss
Coss
Crss
610
145
95
pF
pF
pF
VDS = 15V, VGS = 0V,
f = 1.0 MHz
Output Capacitance
Reverse Transfer Capacitance
Switching Characteristics d
Turn-On Delay Time
td(on)
tr
td(off)
tf
9
3
20
8
ns
ns
VDD = 15V, ID = 7A,
VGS = 10V, RGEN = 3Ω
Turn-On Rise Time
Turn-Off Delay Time
24
4
50
10
16
ns
Turn-Off Fall Time
ns
Total Gate Charge
Qg
12.3
1.5
2.5
nC
nC
nC
VDS = 15V, ID = 7A,
VGS = 10V
Gate-Source Charge
Qgs
Qgd
Gate-Drain Charge
Drain-Source Diode Characteristics and Maximun Ratings
Drain-Source Diode Forward Current b
Drain-Source Diode Forward Voltage c
IS
2.3
1.2
A
V
VSD
VGS = 0V, IS = 2.3A
Notes :
a.Repetitive Rating : Pulse width limited by maximum junction temperature.
b.Surface Mounted on FR4 Board, t < 10 sec.
c.Pulse Test : Pulse Width < 300µs, Duty Cycle < 2%.
d.Guaranteed by design, not subject to production testing.
2
CED3252/CEU3252
40
30
20
10
0
80
25 C
VGS=10,9,8,7,6V
V
GS=5V
60
40
20
V
GS=4V
TJ=125 C
-55 C
V
GS=3V
4
0
0
1
2
3
5
0
1
2
3
4
5
6
VDS, Drain-to-Source Voltage (V)
VGS, Gate-to-Source Voltage (V)
Figure 1. Output Characteristics
Figure 2. Transfer Characteristics
2.2
1.9
1.6
1.3
1.0
0.7
0.4
900
750
600
450
300
150
0
ID=7A
VGS=10V
C
iss
C
oss
C
rss
0
3
6
9
12
15
-100
-50
0
50
100
150
200
VDS, Drain-to-Source Voltage (V)
TJ, Junction Temperature( C)
Figure 3. Capacitance
Figure 4. On-Resistance Variation
with Temperature
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
VDS=VGS
ID=250µA
V
GS=0V
101
100
10-1
-50 -25
0
25 50 75 100 125 150
0.4
0.6
0.8
1.0
1.2
1.4
TJ, Junction Temperature( C)
VSD, Body Diode Forward Voltage (V)
Figure 5. Gate Threshold Variation
with Temperature
Figure 6. Body Diode Forward Voltage
Variation with Source Current
3
CED3252/CEU3252
10
8
102
VDS=15V
ID=7A
RDS(ON)Limit
100ms
1ms
101
10ms
DC
6
100
4
10-1
2
TC=25 C
TJ=150 C
Single Pulse
10-2
0
10-1
100
101
102
0
3
6
9
12
15
Qg, Total Gate Charge (nC)
VDS, Drain-Source Voltage (V)
Figure 7. Gate Charge
Figure 8. Maximum Safe
Operating Area
VDD
on
t
toff
d(off)
t
r
t
d(on)
OUT
RL
t
f
t
VIN
90%
10%
90%
D
OUT
V
V
VGS
10%
INVERTED
RGEN
G
90%
50%
50%
S
IN
V
10%
PULSE WIDTH
Figure 10. Switching Waveforms
Figure 9. Switching Test Circuit
100
D=0.5
0.2
PDM
10-1
0.1
0.05
0.02
0.01
t1
t2
1. RθJC (t)=r (t) * RθJC
2. RθJC=See Datasheet
3. TJM-TC = P* RθJC (t)
4. Duty Cycle, D=t1/t2
Single Pulse
10-2
10-4
10-3
10-2
10-1
100
101
102
Square Wave Pulse Duration (sec)
Figure 11. Normalized Thermal Transient Impedance Curve
4
相关型号:
©2020 ICPDF网 联系我们和版权申明